MAC16HCD, MAC16HCM, MAC16HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full–wave, silicon gate–controlled devices are needed. • High Commutating di/dt and High Immunity to dv/dt @ 125°C • Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 • Blocking Voltage to 800 Volts • On–State Current Rating of 16 Amperes RMS at 80°C • High Surge Current Capability — 150 Amperes • Industry Standard TO–220AB Package for Ease of Design • Glass Passivated Junctions for Reliability and Uniformity • Device Marking: Logo, Device Type, e.g., MAC16HCD, Date Code http://onsemi.com TRIACS 16 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16HCD MAC16HCM MAC16HCN VDRM, VRRM On–State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80°C) IT(RMS) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) ITSM Circuit Fusing Consideration(2) (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Value Unit 4 Volts 400 600 800 1 A 2 150 A TO–220AB CASE 221A STYLE 4 I2t 93 A2sec PGM 20 Watts PG(AV) 0.5 Watts 16 TJ – 40 to +125 °C Tstg – 40 to +150 °C 3 PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Device Package Shipping MAC16HCD TO220AB 50 Units/Rail MAC16HCM TO220AB 50 Units/Rail MAC16HCN TO220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 1999 February, 2000 – Rev. 0 1 Publication Order Number: MAC16HC/D MAC16HCD, MAC16HCM, MAC16HCN THERMAL CHARACTERISTICS Characteristic Symbol Value RθJC RθJA 2.2 62.5 TL 260 Unit °C/W Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Min Typ Max Unit IDRM, IRRM — — — — 0.01 2.0 mA VTM — — 1.6 Volts 10 10 10 16 18 22 50 50 50 — 20 50 — — — 33 36 33 60 80 60 0.5 0.5 0.5 0.80 0.73 0.82 1.5 1.5 1.5 (di/dt)c 15 — — A/ms Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 750 — — V/µs Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz di/dt — — 10 A/µs Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM, Gate Open) ON CHARACTERISTICS Peak On–State Voltage(1) (ITM = TJ = 25°C TJ = 125°C "21 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Holding Current (VD = 12 V, Gate Open, Initiating Current = IGT "150 mA) Latch Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IH mA IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) mA mA VGT Volts DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/µs, CL = 10 µF Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC16HCD, MAC16HCM, MAC16HCN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 (–) MT2 Quadrant III Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC16HCD, MAC16HCM, MAC16HCN 1.10 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 100 Q3 Q2 Q1 10 1 – 40 – 25 – 10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 Q3 1.00 Q1 0.90 0.80 Q2 0.70 0.60 0.50 0.40 – 40 – 25 – 10 125 125 100 LATCHING CURRENT (mA) HOLDING CURRENT (mA) 100 MT2 NEGATIVE 10 MT2 POSITIVE 1 – 40 – 25 – 10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 Q2 Q1 Q3 10 1 – 40 – 25 – 10 125 P(AV), AVERAGE POWER DISSIPATION (WATTS) 125 120 115 60°, 30° 110 90° 105 100 120° 95 90 180° DC 85 80 0 2 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 4. Typical Latching Current versus Junction Temperature Figure 3. Typical Holding Current versus Junction Temperature TC, CASE TEMPERATURE (°C) 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 75 70 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 4 6 8 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) 16 24 22 20 DC 180° 120° 18 16 14 12 10 90° 8 60° 6 4 2 0 30° 0 Figure 5. Typical RMS Current Derating 2 4 6 8 10 12 14 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 6. On-State Power Dissipation http://onsemi.com 4 16 MAC16HCD, MAC16HCM, MAC16HCN 1 TYPICAL @ TJ = 25°C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON-STATE CURRENT (AMP) 100 MAXIMUM @ TJ = 125°C 10 MAXIMUM @ TJ = 25°C 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0 0.5 1 1.5 2 2.5 3 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3.5 Figure 7. Typical On-State Characteristics http://onsemi.com 5 10000 MAC16HCD, MAC16HCM, MAC16HCN PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE Z –T– SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 4: PIN 1. 2. 3. 4. http://onsemi.com 6 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 MAC16HCD, MAC16HCM, MAC16HCN Notes http://onsemi.com 7 MAC16HCD, MAC16HCM, MAC16HCN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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