NUF4402MN 4-Channel EMI Filter with Integrated ESD Protection The NUF4402MN is a four−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 12 pF deliver a cutoff frequency of 151 MHz and stop band attenuation greater than −25 dB from 800 MHz to 3.0 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 101 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth® and WLAN signals. The NUF4402MN is available in the low−profile 8−lead 1.6 mm x 1.6 mm DFN8 surface mount package. Features/Benefits • ±14 kV ESD Protection on each channel (IEC61000−4−2 Level 4, Contact Discharge) • ±8.0 kV ESD protection on each channel (Human Body Model) • R/C Values of 100 and 12 pF deliver Exceptional S21 Performance • • Characteristics of 151 MHz f3dB and −25 dB Stop Band Attenuation from 800 MHz to 3.0 GHz Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings This is a Pb−Free Device Applications • EMI Filtering for LCD and Camera Data Lines • EMI Filtering and Protection for I/O Ports and Keypads http://onsemi.com MARKING DIAGRAM 8 1 DFN8 CASE 506AK F2MG G 1 F2 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NUF4402MNT1G DFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0 −5 −10 Cd = 12 pF Cd = 12 pF Filter + ESDn S21 (dB) −15 R = 100 Filter + ESDn −20 −25 Channel 1 −30 Channel 4 −35 See Table 1 for pin description Channel 2 −40 −45 1.0E+6 Channel 3 10.0E+6 100E+6 1.0e+9 10.0E+9 FREQUENCY (Hz) Figure 1. Electrical Schematic © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 Figure 2. Insertion Loss Characteristic 1 Publication Order Number: NUF4402MN/D NUF4402MN 1 7 2 6 GND 8 5 3 4 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Filter 1 1&8 Filter + ESD Channel 1 Description Filter 2 2&7 Filter + ESD Channel 2 Filter 3 3&6 Filter + ESD Channel 3 Filter 4 4&5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit VPP 14 0.4 8.0 kV Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C ESD Discharge IEC61000−4−2 Contact Discharge Machine Model Human Body Model Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ VRWM 5.0 V 8.0 V 100 nA IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Resistance RA IR = 10 mA 85 100 115 Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 10 12 15 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 20 24 30 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, appreciable attenuation occurs 151 MHz 6 dB Cut−Off Frequency (Note 1) f6dB Above this frequency, appreciable attenuation occurs 280 MHz http://onsemi.com 2 7.0 Unit VBR 1. 50 source and 50 load termination. 6.0 Max NUF4402MN 0 0 −5 −5 −10 −10 −15 −15 S21 (dB) S21 (dB) TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) −20 −25 Channel 1 −30 −45 1.0E+6 100E+6 Channel 3 to 4 Channel 2 to 3 −40 Channel 3 10.0E+6 Channel 1 to 2 −35 Channel 2 −40 −25 −30 Channel 4 −35 −20 1.0e+9 10.0E+9 −45 1.0E+6 10.0E+6 FREQUENCY (Hz) 1.0e+9 10.0E+9 FREQUENCY (Hz) Figure 4. Insertion Loss Characteristic Figure 5. Insertion Loss Characteristic 110 2.0 108 106 1.5 RESISTANCE () NORMALIZED CAPACITANCE 100E+6 1.0 0.5 104 102 100 98 96 94 92 0 0 1.0 2.0 3.0 4.0 90 −40 5.0 −20 0 20 40 60 80 REVERSE VOLTAGE (V) TEMPERATURE (°C) Figure 6. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance Cd at 2.5 V) Figure 7. Typical Resistance over Temperature http://onsemi.com 3 NUF4402MN Theory of Operation approximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation. From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed. Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x. All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 8 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used. The NUF44402MN combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application. Application Example The accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series Equation 1: a 1 sin((2n * 1) t) x(t) + 1 ) 2 0 2 n + 1 2n * 1 ƪ ƫ (eq. 1) Equation 2 (simplified form of Equation 1): ƪ ƫ sin( 0t) sin(3 0t) sin(5 0t) ) ) ) AAA (eq. 2) x(t) + 1 ) 2 1 3 5 2 −3 dB −6 dB Magnitude (dB) −9 dB f1 f2 100k 1M f3 100M 10M 1G 10G Frequency (Hz) Figure 8. Filter Bandwidth multiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies. From the above paragraphs it is shown that the maximum supported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data rate http://onsemi.com 4 NUF4402MN with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 9b. In the case that a 100 MHz signal is input to this filter, the third harmonic term is attenuated even further and results in even more rounding of the signal edges as is shown in Figure 9c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s) more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity. While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate. Table 2. Frequency Chart Bandwidth Maximum Supported Frequency Third Harmonic Frequency 3 dB – 100 MHz 33.33 MHz (f1) 100 MHz 6 dB – 200 MHz 66.67 MHz (f2) 200 MHz 9 dB – 300 MHz 100 MHz (f3) 300 MHz Considering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter, the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 9a. If a signal Input Waveform Output Waveform a) Frequency = f1 Input Waveform Output Waveform b) Frequency = f2 Input Waveform c) Frequency = f3 Output Waveform Figure 9. Input and Output Waveforms of Filter http://onsemi.com 5 NUF4402MN PACKAGE DIMENSIONS DFN8 CASE 506AK−01 ISSUE C A D PIN ONE REFERENCE 2X 0.15 C B ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 4. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. E (A3) TOP VIEW 2X DIM A A1 A3 b D D2 E E2 e K L 0.15 C 0.10 C (A3) A SOLDERING FOOTPRINT* 8X 0.08 C 0.490 0.0193 SEATING PLANE SIDE VIEW A1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.15 0.25 1.60 BSC 0.70 0.90 1.60 BSC 0.30 0.50 0.40 BSC 0.20 −−− 0.20 0.40 0.924 0.0364 C D2 8X L 1 e 2X 4 NOTE 4 E2 3X 8X K 0.400 0.0157 PITCH 8 5 8X b 0.10 C A B BOTTOM VIEW 0.05 C 0.902 0.0355 0.200 0.0079 NOTE 3 0.502 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUF44402MN/D