NUP8010MN Low Capacitance Transient Voltage Suppressor Array This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for eight separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com 1 8 2 7 3 6 4 5 Features • Low Capacitance • Low Leakage Current < 1 mA @ 3 V • ESD Ratings: ♦ IEC61000−4−2, 18 kV (Contact) IEC61000−4−2, 30 kV (Air) ♦ Machine Model = Class C, 400 V ♦ Human Body Model = Class 3B, 8 kV DFN Package, 1.6 x 1.6 mm Moisture Sensitivity Level 1 This is a Pb−Free Device ♦ • • • (Top View) MARKING DIAGRAM Benefits • Provides Protection for ESD Industry Standards: IEC 61000, HBM • Protects the Line Against Transient Voltage Conditions in Either • • Direction Minimize Power Consumption of the System Minimize PCB Board Space 8 1 DFN8 CASE 506AK 1 5P M G G 5P = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Applications ESD Protection for Data Lines Wireless Phones Handheld Products Notebook Computers LCD Displays PIN CONNECTIONS 8 1 7 2 6 GND • • • • • 3 5 4 (Bottom View) ORDERING INFORMATION Device NUP8010MNT1G Package DFN8 (Pb−Free) Shipping 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 1 1 Publication Order Number: NUP8010MN/D NUP8010MN MAXIMUM RATINGS Parameter Symbol ESD Discharge IEC61000−4−2 Value VPP kV Air Discharge Contact Discharge Peak Power Dissipation (8 x 20 mS @ TA = 25°C) Unit 15 8.0 Ppk (Note 1) 20 W Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current per Figure 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 3.0 V 5.6 5.9 V 0.01 1.0 mA 13 V VRWM VBR IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Clamping Voltage Vc IPP = 1.6 A Capacitance Cd f = 1 MHz, VR = 0 V 13 17 pF Capacitance Cd f = 1 MHz, VR = 3.0 V 7.0 11.5 pF http://onsemi.com 2 5.3 NUP8010MN TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) % OF RATED POWER OR IPP 10 1 1 10 100 100 90 80 70 60 50 40 30 20 10 0 1000 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Width Figure 2. Power Derating Curve 0.16 100 0.14 90 0.12 0.10 0.08 0.06 0.04 0.02 0 −60 −40 0 t, TIME (ms) % OF PEAK PULSE CURRENT IR, REVERSE LEAKAGE (mA) 110 −20 0 20 40 60 80 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 100 40 t, TIME (ms) Figure 3. Reverse Leakage versus Temperature Figure 4. 8 × 20 ms Pulse Waveform 0 20 1 0.1 0.01 TA = 25°C 0.001 0.6 0.8 1.0 1.2 1.4 VF, FORWARD VOLTAGE (V) Figure 5. Forward Voltage http://onsemi.com 3 150 PEAK VALUE IRSM @ 8 ms tr T, TEMPERATURE (°C) IF, FORWARD CURRENT (A) Ppk, PEAK SURGE POWER (W) 100 1.6 1.8 60 80 NUP8010MN PACKAGE DIMENSIONS DFN8 CASE 506AK−01 ISSUE C A D PIN ONE REFERENCE 2X 0.15 C B ÉÉÉ ÉÉÉ ÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 4. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. E (A3) TOP VIEW 2X DIM A A1 A3 b D D2 E E2 e K L 0.15 C 0.10 C (A3) MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.15 0.25 1.60 BSC 0.70 0.90 1.60 BSC 0.30 0.50 0.40 BSC 0.20 −−− 0.20 0.40 A 8X 0.08 C SOLDERING FOOTPRINT* SEATING PLANE SIDE VIEW A1 0.490 0.0193 C 0.924 0.0364 D2 8X L 1 e 2X 4 NOTE 4 3X 8X K 8 5 8X BOTTOM VIEW b 0.10 C A B 0.05 C 0.902 0.0355 0.200 0.0079 E2 NOTE 3 0.400 0.0157 PITCH 0.502 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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