NL27WZ16 Dual Buffer The NL27WZ16 is a high performance dual buffer operating from a 1.65 to 5.5 V supply. At VCC = 3 V, high impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. http://onsemi.com Features • • • • • • Extremely High Speed: tPD 2.0 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability With 5 V TTL Logic with VCC = 3 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 These Devices are Pb−Free and are RoHS Compliant NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable MARKING DIAGRAMS SC−88/SC−70−6/SOT−363 DF SUFFIX CASE 419B 1 1 M • • • • MR M G G 1 TSOP−6 DT SUFFIX CASE 318G MR M G G 1 MR = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) IN A1 1 6 OUT Y1 GND 2 5 VCC IN A2 3 4 *Date Code orientation and/or position may vary depending upon manufacturing location. PIN ASSIGNMENT OUT Y2 Figure 1. Pinout (Top View) IN A1 1 OUT Y1 IN A2 1 OUT Y2 Pin Function 1 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 FUNCTION TABLE A Input Figure 2. Logic Symbol Y Output L L H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 9 1 Publication Order Number: NL27WZ16/D NL27WZ16 MAXIMUM RATINGS Symbol VCC Characteristics DC Supply Voltage Value Units −0.5 to +7.0 V VI DC Input Voltage −0.5 ≤ VI ≤ +7.0 V VO DC Output Voltage Output in Z or LOW State (Note 1) −0.5 ≤ VO ≤ +7.0 V IIK DC Input Diode Current VI < GND −50 mA IOK DC Output Diode Current VO < GND −50 mA IO DC Output Sink Current ±50 mA ICC DC Supply Current per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C PD Power Dissipation in Still Air SC−88, TSOP−6 200 qJA Thermal Resistance SC−88, TSOP−6 333 TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 N/A ILatchup Latchup Performance Above VCC and Below GND at 85°C (Note 5) mW °C/W V mA ±500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Tested to EIA/JESD22−A114−A 3. Tested to EIA/JESD22−A115−A 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Operating Data Retention Only Min Max 1.65 1.5 5.5 5.5 0 5.5 Units V VI Input Voltage VO Output Voltage (High or LOW State) 0 5.5 V TA Operating Free−Air Temperature −55 +125 °C Dt/DV Input Transition Rise or Fall Rate VCC = 1.8 V ±0.15 V VCC = 2.5 V ±0.2 V VCC = 3.0 V ±0.3 V VCC = 5.0 V ±0.5 V 0 0 0 0 20 20 10 5 http://onsemi.com 2 V ns/V NL27WZ16 DC ELECTRICAL CHARACTERISTICS Symbol VIH VIL VOH VOL Min High−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 0.75 VCC 0.7 VCC Low−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 Parameter Condition High−Level Output Voltage VIN = VIH Low−Level Output Voltage VIN = VIL Input Leakage Current Typ −555C 3 TA 3 1255C Max Min Max 0.75 VCC 0.7 VCC 0.25 VCC 0.3 VCC 0.25 VCC 0.3 VCC 1.55 1.7 2.2 2.9 4.4 1.65 1.8 2.3 3.0 4.5 1.55 1.7 2.2 2.9 4.4 IOH = −4 mA IOH = −8 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 2.3 3.0 3.0 4.5 1.29 1.9 2.4 2.3 3.8 1.52 2.15 2.80 2.68 4.20 1.29 1.9 2.4 2.3 3.8 IOL = 100 mA 1.65 1.8 2.3 3.0 4.5 0.0 0.0 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1.65 2.3 3.0 3.0 4.5 0.08 0.10 0.15 0.22 0.22 0.24 0.30 0.40 0.55 0.55 0.24 0.30 0.40 0.55 0.55 ±0.1 ±1.0 VIN = 5.5 V or GND 0 to 5.5 Units V 1.65 1.8 2.3 3.0 4.5 IOH = −100 mA IOL = 4 mA IOL = 8 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA IIN TA = 255C VCC (V) V V V V V mA IOFF ICC Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V Quiescent Supply Current VIN = 5.5 V or GND 0 1 10 mA 5.5 1 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W TA = 25°C Symbol tPLH tPHL Condition VCC (V) Min Typ Max Min Max Units RL = 1 MW, CL = 15 pF 1.8 ± 0.15 1.8 8.0 9.6 1.8 10.2 ns RL = 1 MW, CL = 15 pF 2.5 ± 0.2 1.0 3.0 5.2 1.0 5.8 0.8 2.3 3.6 0.8 4.0 1.2 3.0 4.6 1.2 5.1 0.5 1.8 2.9 0.5 3.2 0.8 2.4 3.8 0.8 4.2 Parameter Propagation Delay (Figure 3 and 4) −55°C 3 TA 3 125°C RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 3.3 ± 0.3 5.0 ± 0.5 CAPACITIVE CHARACTERISTICS Symbol Parameter CIN Input Capacitance CPD Power Dissipation Capacitance (Note 6) Condition Typical Units VCC = 5.5 V, VI = 0 V or VCC 7.0 pF 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 9 11 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin ) ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin ) ICC VCC. http://onsemi.com 3 NL27WZ16 A VCC 50% GND tPLH Y tPHL 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Switching Waveforms VCC PULSE GENERATOR DUT RT CL RL RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Package Shipping† NL27WZ16DFT2G SC−88/SC−70/SOT−363 (Pb−Free) 3000 /Tape & Reel NLV27WZ16DFT2G* SC−88/SC−70/SOT−363 (Pb−Free) 3000 /Tape & Reel TSOP−6 (Pb−Free) 3000 /Tape & Reel Device NL27WZ16DTT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 4 NL27WZ16 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NL27WZ16 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE U D H ÉÉÉ ÉÉÉ 6 E1 1 NOTE 5 5 2 L2 4 GAUGE PLANE E 3 L b C DETAIL Z e 0.05 M A SEATING PLANE c A1 DETAIL Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. DIM A A1 b c D E E1 e L L2 M MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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