NL27WZ16 Dual Buffer The NL27WZ16 is a high performance dual buffer operating from a 1.65 to 5.5 V supply. At VCC = 3 V, high impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. http://onsemi.com Features • • • • • • MARKING DIAGRAMS SC−88/SC−70−6/SOT−363 DF SUFFIX CASE 419B 1 6 1 MR M G G 1 TSOP−6 DT SUFFIX CASE 318G 1 IN A1 M • • • Extremely High Speed: tPD 2.0 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability With 5 V TTL Logic with VCC = 3 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available MR M G G 1 MR = Device Code M = Date Code* G = Pb−Free Package OUT Y1 (Note: Microdot may be in either location) GND 2 5 VCC IN A2 3 4 OUT Y2 *Date Code orientation and/or position and underbar may vary depending upon manufacturing location. PIN ASSIGNMENT Figure 1. Pinout (Top View) IN A1 1 OUT Y1 IN A2 1 OUT Y2 1 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 FUNCTION TABLE Figure 2. Logic Symbol A Input Y Output L H L H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 5 1 Publication Order Number: NL27WZ16/D NL27WZ16 MAXIMUM RATINGS Characteristics Symbol Value Unit VCC *0.5 to )7.0 V VI *0.5 ≤ VI ≤ )7.0 V Output in Z or LOW State (Note 1) VO *0.5 ≤ VO ≤ 7.0 V VI < GND IIK *50 mA VO < GND DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current IOK *50 mA DC Output Sink Current IO $50 mA DC Supply Current per Supply Pin ICC $100 mA DC Ground Current per Ground Pin IGND $100 mA Storage Temperature Range TSTG *65 to )150 °C DC Output Diode Current Power Dissipation in Still Air SC−88, TSOP−6 PD 200 mW Thermal Resistance SC−88, TSOP−6 qJA 333 °C/W Lead Temperature, 1 mm from Case for 10 Seconds TL 260 °C Junction Temperature Under Bias TJ )150 °C VESD > 2000 > 200 N/A V ILatchup $500 mA ESD Withstand Voltage Latchup Performance Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Above VCC and Below GND at 85°C (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Tested to EIA/JESD22−A114−A 3. Tested to EIA/JESD22−A115−A 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Operating Data Retention Only Input Voltage Output Voltage (High or LOW State) Operating Free−Air Temperature Input Transition Rise or Fall Rate VCC = 1.8 V $0.15 V VCC = 2.5 V $0.2 V VCC =3.0 V $0.3 V VCC =5.0 V $0.5 V http://onsemi.com 2 Symbol Min Max Unit VCC 1.65 1.5 5.5 5.5 V VI 0 5.5 V VO 0 5.5 V TA *40 )85 °C Dt/DV 0 0 0 0 20 20 10 5 ns/V NL27WZ16 DC ELECTRICAL CHARACTERISTICS Parameter Condition Symbol High−Level Input Voltage VIH Low−Level Input Voltage VIL High−Level Output Voltage VIN = VIH IOH = −100 mA IOH = −4 mA IOH = −8 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA IOL = 100 mA Low−Level Output Voltage VIN = VIL VOL IOL = 4 mA IOL = 8 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA Input Leakage Current 0 V v VIN v 5.5 V Min 1.65 to 1.95 2.3 to 5.5 0.75 VCC 0.7 VCC Typ IIN Max Min Max 0.75 VCC 0.7 VCC 1.65 to 1.95 2.3 to 5.5 VOH *405C v TA v 855C TA = 255C VCC (V) 0.25 VCC 0.3 VCC V 0.25 VCC 0.3 VCC 1.65 1.8 2.3 3.0 4.5 1.55 1.7 2.2 2.9 4.4 1.65 1.8 2.3 3.0 4.5 1.55 1.7 2.2 2.9 4.4 1.65 2.3 3.0 3.0 4.5 1.29 1.9 2.4 2.3 3.8 1.52 2.15 2.80 2.68 4.20 1.29 1.9 2.4 2.3 3.8 V V V 1.65 1.8 2.3 3.0 4.5 0.0 0.0 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1.65 2.3 3.0 3.0 4.5 0.08 0.10 0.15 0.22 0.22 0.24 0.30 0.40 0.55 0.55 0.24 0.30 0.40 0.55 0.55 $1.0 $1.0 0 to 5.5 Unit V V mA Power Off Leakage Current VIN or VOUT = 5.5 V Quiescent Supply Current VIN = 5.5 V, GND IOFF 0.0 1.0 10 mA ICC 1.65 to 5.5 1.0 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W *40°C ≤ TA ≤ 85°C TA = 25°C Condition Symbol VCC (V) Min Typ Max Min Max Unit RL = 1 MW, CL = 15 pF tPLH tPHL 1.8 $ 0.15 1.8 8.0 9.6 1.8 10.2 ns 2.5 $ 0.2 1.0 3.0 5.2 1.0 5.8 0.8 2.3 3.6 0.8 4.0 1.2 3.0 4.6 1.2 5.1 0.5 1.8 2.9 0.5 3.2 0.8 2.4 3.8 0.8 4.2 Parameter Propagation Delay (Figure 3 and 4) RL = 1 MW, CL = 15 pF RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 3.3 $ 0.3 5.0 $ 0.5 CAPACITIVE CHARACTERISTICS Parameter Input Capacitance Power Dissipation Capacitance (Note 6) Condition Symbol Typical Unit VCC = 5.5 V, VI = 0 V or VCC CIN 7.0 pF 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC CPD 9 11 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin ) ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin ) ICC VCC. http://onsemi.com 3 NL27WZ16 VCC A 50% GND tPLH Y tPHL 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Switching Waveforms VCC PULSE GENERATOR DUT RT CL RL RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Device Package NL27WZ16DFT2 SC−88/SC−70/SOT−363 NL27WZ16DFT2G SC−88/SC−70/SOT−363 (Pb−Free) Shipping† 3000 /Tape & Reel NL27WZ16DTT1 NL27WZ16DTT1G TSOP−6 TSOP−6 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZ16 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NL27WZ16 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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