NLAS5223C, NLAS5223CL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223C is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.35 , at VCC = 4.3 V. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • • • • Ultra−Low RON, 0.35 (typ) at VCC = 4.3 V NLAS5223C Interfaces with 2.8 V Chipset NLAS5223CL Interfaces with 1.8 V Chipset Single Supply Operation from 1.65−4.5 V Full 0−VCC Signal Handling Capability High Off−Channel Isolation Low Standby Current, t50 nA Low Distortion RON Flatness of 0.15 High Continuous Current Capability ♦ ±320 mA Through Each Switch Large Current Clamping Diodes at Analog Inputs ♦ ±100 mA Continuous Current Capability Package: ♦ 1.4 x 1.8 x 0.55 mm UQFN10 Pb−Free These are Pb−Free Devices UQFN10 CASE 488AT 1 XX M G XXMG G = Specific Device Code = Date Code/Assembly Location = Pb−Free Device (Note: Microdot may be in either location) NC2 GND 7 6 IN2 8 5 NC1 COM2 9 4 IN1 10 3 COM1 NO2 Applications • • • • Cell Phone Audio Block Speaker and Earphone Switching Ring−Tone Chip/Amplifier Switching Modems 1 2 VCC NO1 FUNCTION TABLE IN 1, 2 NO 1, 2 NC 1, 2 0 OFF ON 1 ON OFF ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 2 1 Publication Order Number: NLAS5223C/D NLAS5223C, NLAS5223CL COM NO NC IN Figure 1. Logic Equivalent Circuit PIN DESCRIPTION QFN PIN # Symbol Name and Function 2, 5, 7, 10 NC1 to NC2, NO1 to NO2 Independent Channels 4, 8 IN1 and IN2 3, 9 COM1 and COM2 Controls 6 GND Ground (V) 1 VCC Positive Supply Voltage Common Channels MAXIMUM RATINGS Symbol Parameter VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO, VNC, or VCOM) VIN Digital Select Input Voltage Ianl1 Value Unit −0.5 to +7.0 V −0.5 v VIS v VCC + 0.5 V −0.5 v VIN v +5.5 V Continuous DC Current from COM to NC/NO ±320 mA Ianl−pk1 Peak Current from COM to NC/NO, 10% Duty Cycle, 100 ms = tON (Note 1) ±600 mA Ianl−pk2 Instantaneous Peak Current from COM to NC/NO, 10% Duty Cycle, tON < 1 s ±850 mA Iclmp Continuous DC Current into COM/NO/NC with Respect to VCC or GND ±100 mA ESD ESD Withstand Voltage >3000 V Human Body Model (HBM) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Defined as 10% ON, 90% OFF Duty Cycle. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 1.65 4.5 V VIN Digital Select Input Voltage (OVT) Overvoltage Tolerance GND 4.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range −40 +85 °C tr, tf Input Rise or Fall Time, SELECT VCC = 1.6 V − 2.7 V VCC = 3.0 V − 4.5 V ns/V 20 10 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLAS5223C, NLAS5223CL NLAS5223C DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter VCC 25°C −40°C to +85°C Unit VIH Minimum High−Level Input Voltage, Select Inputs 3.0 4.3 1.4 2.0 1.4 2.0 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 4.3 0.7 0.8 0.7 0.8 V IIN Maximum Input Leakage Current, Select Inputs VIN = VCC or GND 4.3 ±0.1 ±1.0 A IOFF Power Off Leakage Current VIN = VCC or GND 0 ±0.5 ±2.0 A ICC Maximum Quiescent Supply Current (Note 2) Select and VIS = VCC or GND 1.65 to 4.5 ±1.0 ±2.0 A Condition 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. NLAS5223C DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION Guaranteed Maximum Limit 25°C Max Unit NC/NO On−Resistance (Note 3) VIN = VIL or VIN = VIH VIS = GND to VCC ICOM = 100 mA 3.0 4.3 0.4 0.35 0.5 0.4 RFLAT NC/NO On−Resistance Flatness (Notes 3 and 4) ICOM = 100 mA VIS = 0 to VCC 3.0 4.3 0.16 0.11 0.20 0.14 RON On−Resistance Match Between Channels (Notes 3 and 5) VIS = 1.5 V; ICOM = 100 mA VIS = 2.2 V; ICOM = 100 mA 3.0 0.05 0.05 4.3 0.05 0.05 Symbol RON Parameter Condition VCC Min −40°C to +85°C Max Min INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 3) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 4.0 V 4.3 −5.0 5.0 −50 50 nA ICOM(ON) COM ON Leakage Current (Note 3) VIN = VIL or VIH VNO 0.3 V or 4.0 V with VNC floating or VNC 0.3 V or 4.0 V with VNO floating VCOM = 0.3 V or 4.0 V 4.3 −10 10 −100 100 nA 3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 4. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog signal ranges. 5. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2. www.onsemi.com 3 NLAS5223C, NLAS5223CL NLAS5223CL DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter VCC 25°C −40°C to +85°C Unit VIH Minimum High−Level Input Voltage, Select Inputs 3.0 4.3 1.3 1.6 1.3 1.6 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 4.3 0.5 0.6 0.5 0.6 V IIN Maximum Input Leakage Current, Select Inputs VIN = 4.5 V or GND 4.3 ±0.1 ±1.0 A IOFF Power Off Leakage Current VIN = 4.5 V or GND 0 ±0.5 ±2.0 A ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND 1.65 to 4.5 ±1.0 ±2.0 A ICCV Maximum Quiescent Supply Current, Low Voltage Driving (Note 6) VIS = VCC or GND VIN = 1.65 V 4.3 ±145 ±150 A VIS = VCC or GND VIN = 1.80 V ±125 ±130 VIS = VCC or GND VIN = 2.60 V ±50 ±55 Condition 6. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. NLAS5223CL DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION Guaranteed Maximum Limit 25°C Symbol Parameter Condition VCC Min −40°C to +85°C Max Min Max Unit NC/NO On−Resistance (Note 7) VIN = VIL or VIN = VIH VIS = GND to VCC ICOM = 100 mA 3.0 4.3 0.4 0.35 0.5 0.4 RFLAT NC/NO On−Resistance Flatness (Notes 7 and 8) ICOM = 100 mA VIS = 0 to VCC 3.0 4.3 0.16 0.11 0.20 0.14 RON On−Resistance Match Between Channels (Notes 7 and 9) VIS = 1.5 V; ICOM = 100 mA VIS = 2.2 V; ICOM = 100 mA 3.0 0.05 0.05 4.3 0.05 0.05 RON INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 7) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 4.0 V 4.3 −10 10 −100 100 nA ICOM(ON) COM ON Leakage Current (Note 7) VIN = VIL or VIH VNO 0.3 V or 4.0 V with VNC floating or VNC 0.3 V or 4.0 V with VNO floating VCOM = 0.3 V or 4.0 V 4.3 −10 10 −100 100 nA 7. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 8. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog signal ranges. 9. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2. www.onsemi.com 4 NLAS5223C, NLAS5223CL AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter Test Conditions VCC (V) VIS (V) 25°C Min Typ* −40°C to +85°C Max Min Max Unit tON Turn−On Time RL = 50 , CL = 35 pF (Figures 3 and 4) 2.3 − 4.5 1.5 50 60 ns tOFF Turn−Off Time RL = 50 , CL = 35 pF (Figures 3 and 4) 2.3 − 4.5 1.5 30 40 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 RL = 50 , CL = 35 pF (Figure 2) 3.0 1.5 ns 2 15 Typical @ 25, VCC = 3.6 V CIN CNO/NC CCOM Control Pin Input Capacitance 3.5 pF NO, NC Port Capacitance 60 pF COM Port Capacitance When Switch is Enabled 200 pF *Typical Characteristics are at 25°C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol BW Parameter Condition 25°C VCC (V) Typical Unit Maximum On−Channel −3 dB Bandwidth or Minimum Frequency Response VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 24 MHz VONL Maximum Feed−through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −0.06 dB VISO Off−Channel Isolation f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −68 dB Charge Injection Select Input to Common I/O VIN = VCC to GND, RIS = 0 , CL = 1.0 nF Q = CL x DVOUT (Figure 6) 1.65 − 4.5 38 pC THD Total Harmonic Distortion THD + Noise FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 2.0 V RMS 3.0 0.08 % VCT Channel−to−Channel Crosstalk f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50 VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −70 dB Q 10. Off−Channel Isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to off switch. www.onsemi.com 5 NLAS5223C, NLAS5223CL VCC DUT VIS Input Output GND VOUT 0.1 F 50 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 2. tBBM (Time Break−Before−Make) VCC Input DUT VIS 0.1 F 50% Output VOUT Open 50% 0V 50 VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 3. tON/tOFF VCC VCC Input DUT Output 50 50% 0V VOUT Open 50% VOH 35 pF Output Input tOFF Figure 4. tON/tOFF www.onsemi.com 6 10% 10% VOL tON NLAS5223C, NLAS5223CL 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Logǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 6. Charge Injection: (Q) www.onsemi.com 7 On Off VOUT NLAS5223C, NLAS5223CL 0 0 −10 −5 −30 −10 BW (dB) CROSS TALK (dB) −20 −40 −50 −60 −15 −20 −70 −25 −80 −90 10k 100k 1M 10M 1.00E+05 1.00E+07 FREQUENCY (Hz) FREQUENCY (Hz) Figure 7. Cross Talk vs. Frequency (VCC = 3.0 V) Figure 8. Bandwidth (VCC = 3.0 V) 0 0.12 −20 OFF ISOLATION (dB) 0.14 0.1 THD (%) −30 1.00E+03 100M 0.08 0.06 0.04 1.00E+09 −40 −60 −80 −100 0.02 0 10 1k 100 10k −120 10k 100k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) Figure 9. Total Harmonic Distortion (VCC = 3.0 V) Figure 10. Off Isolation (VCC = 3.0 V) 0.45 100M 0.55 0.50 0.40 0.35 RON () RON () VCC = 3.0 V 0.30 0.45 TA = 85°C 0.40 TA = 25°C 0.35 TA = −40°C VCC = 4.3 V 0.30 0.25 0.25 0.20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.20 0.0 4.5 0.5 1.0 1.5 2.0 2.5 VIN (V) VIN (V) Figure 11. On−Resistance vs. Input Voltage @ 255C and VCC = 3.0 V and 4.3 V Figure 12. On−Resistance vs. Input Voltage @ VCC = 3.0 V, TA = −405C to 855C www.onsemi.com 8 3.0 NLAS5223C, NLAS5223CL 0.45 RON () 0.40 0.35 TA = 85°C 0.30 TA = 25°C 0.25 TA = −40°C 0.20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VIN (V) Figure 13. On−Resistance vs. Input Voltage @ VCC = 3.0 V, TA = −405C to 855C ORDERING INFORMATION Marking Package Shipping† NLAS5223CMUTAG AK UQFN10 (Pb−Free) 3000 / Tape & Reel NLAS5223CLMUTAG AU UQFN10 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 9 NLAS5223C, NLAS5223CL PACKAGE DIMENSIONS UQFN10, 1.4x1.8, 0.4P CASE 488AT ISSUE A EDGE OF PACKAGE ÉÉ ÉÉ ÉÉ D PIN 1 REFERENCE 2X 2X 0.10 C L1 E DETAIL A Bottom View (Optional) 0.10 C B TOP VIEW A1 0.05 C A1 3 SEATING PLANE C SIDE VIEW 9X EXPOSED Cu A 0.05 C 10X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A 5 ÉÉ ÉÉ DIM A A1 A3 b D E e L L1 L3 MOLD CMPD A3 DETAIL B Side View (Optional) MOUNTING FOOTPRINT 1.700 0.0669 e/2 L 0.663 0.0261 6 e 1 MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.127 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 9X 0.563 0.0221 0.200 0.0079 10 1 10 X L3 b 0.10 C A B 0.05 C 2.100 0.0827 NOTE 3 BOTTOM VIEW 0.400 0.0157 PITCH 10 X 0.225 0.0089 SCALE 20:1 mm Ǔ ǒinches ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NLAS5223C/D