NLMD5820 2.65 W Filterless Class-D Audio Amplifier with Integrated Dual SPST Switch The NLMD5820 is an integrated mono Class-D audio power amplifier and dual SPST switch capable of delivering 2.65 W of continuous average power to 4.0 from a 5.0 V supply in a Bridge Tied Load (BTL) configuration. Under the same conditions, the output power stage can provide 1.4 W to a 8.0 BTL load with less than 1% THD+N. For cellular handsets or PDAs it offers space and cost savings because no output filter is required when using inductive tranducers. The NLMD5820 incorporates a dual SPST switch which allows signals to bypass the amplifier. The integrated switch operates off a separate supply voltage and maintains a very low RON resistance, 0.5 max @ 2.8 V VCC. The NLMD5820 processes analog inputs with a pulse width modulation technique that lowers output noise and THD when compared to a conventional sigma-delta modulator. The device allows independent gain while summing signals from various audio sources. Thus, in cellular handsets, the earpiece, the loudspeaker and even the melody ringer can be driven with a single NLMD5820. Due to its low 42V noise floor, A-weighted, clean listening is guaranteed no matter the load sensitivity. Features •Optimized PWM Output Stage: Filterless Capability •Efficiency up to 90% Low 2.5 mA Typical Quiescent Current •Large Output Power Capability: 1.4 W with 8.0 Load (CSP) and THD + N < 1% •Dual SPST with 0.5 Max RON @ VCC = 2.8 V •High Performance, THD+N of 0.03% @ Vp = 5.0 V, RL = 8.0 , Pout = 100 mW •Excellent PSRR (-65 dB): No Need for Voltage Regulation •Surface Mounted Package UDFN16 •Fully Differential Design. Eliminates Two Input Coupling Capacitors •Very Fast Turn On/Off Times with Advanced Rising and Falling Gain Technique •External Gain Configuration Capability •Internally Generated 250 kHz Switching Frequency •Short Circuit Protection Circuitry •“Pop and Click” Noise Protection Circuitry •This is a Pb-Free Device Applications •Cellular Phone •Portable Electronic Devices •PDAs and Smart Phones © Semiconductor Components Industries, LLC, 2007 September, 2007 - Rev. 0 http://onsemi.com MARKING DIAGRAM 16 A2A M G 1 16 PIN UDFN CASE 517AL A2A M G 1 = Specific Device Code = Date Code/Assembly Location = Pb-Free Package PIN CONNECTIONS NC2 1 16 GND IN2 2 15 NC1 COM2 3 14 IN1 VCC 4 13 COM1 SD 5 12 OUTM VP 6 11 GND INP 7 10 VP INM 8 9 OUTP (Top View) ORDERING INFORMATION Device NLMD5820MUTAG Package Shipping† 16 PIN 3000/Tape & Reel UDFN (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NLMD5820/D NLMD5820 2.2 F Vp Rf Ci Ri 100 nF VCC Vp INM OUTP BYPASS Negative Differential Input Vp RAMP GENERATOR RL = 8 Required for Filtering the Audio Input Signal Data Processor BYPASS INTERNAL BIASING OUTM Ci BYPASS Ri INP GND Rf NC1 Positive Differential Input COM1 NC2 Shutdown Control COM2 SD Vih IN2 IN1 Vil Figure 1. Functional Block Diagram FUNCTION TABLE IN 1, 2 NC 1, 2 0 1 ON OFF http://onsemi.com 2 GND NLMD5820 PIN DESCRIPTION Pin No. Symbol Type 1 NC2 I/O Description 2 IN2 I 3 COM2 I/O 4 VCC I Analog Supply for Switches. Range: 1.65 V – 4.5 V. 5 SD I The device enters in Shutdown Mode when a low level is applied on this pin. An internal 300 k resistor will force the device in shutdown mode if no signal is applied to this pin. It also helps to save space and cost. 6 Vp I Power Analog Positive Supply. Range: 2.5 V – 5.5 V. 7 INP I Positive Differential Input. 8 INM I Negative Differential Input. Normally Closed Signal Line for Switch #2. Control Input for Switch #2. Common Signal Line for Switch #2. 9 OUTP O Positive BTL Output. 10 Vp I Analog Positive Supply. Range: 2.5 V - 5.5 V. 11 GND I Analog Ground. 12 OUTM O Negative BTL Output. 13 COM1 I/O Common Signal Line for Switch #1. 14 IN1 I 15 NC1 I/O 16 GND I Control Input for Switch #1. Normally Closed Signal Line for Switch #1. Analog Ground. http://onsemi.com 3 NLMD5820 MAXIMUM RATINGS Symbol Rating Vp Supply Voltage for Amplifier Vin Input Voltage for Amplifier VCC Supply Voltage for Switches VIS Analog Signal Voltage for Switches (VNC, or VCOM) VIN Control Input for Switches Iout Ianl1 Ianl-pk1 Active Mode Shutdown Mode Max Unit 6.0 7.0 V -0.3 to VCC +0.3 V -0.5 to +5.5 V -0.5 v VIS v VCC + 0.5 V -0.5 v VIN v +5.5 V Max Output Current of Amplifier (Note 1) 1.5 A Continuous DC Current from COM to NC ±300 mA Peak Current from COM to NC, 10 Duty Cycle ±500 mA ±100 mA Pd Power Dissipation (Note 2) Internally Limited - TJ Max Junction Temperature 150 °C Tstg Storage Temperature Range -65 to +150 °C RJA Thermal Resistance Junction-to-Air 50 °C/W - ESD Protection Human Body Model (HBM) (Note 3) Machine Model (MM) (Note 4) > 2000 > 200 V - Latchup Current @ TA = 85°C (Note 5) ±100 mA Iclmp MSL Continuous DC Current into COM/NC with Respect to VCC or GND UDFN16 UDFN16 Moisture Sensitivity (Note 6) Level 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The device is protected by a current breaker structure. See “Current Breaker Circuit” in the Description Information section for more information. 2. The thermal shutdown is set to 160°C (typical) avoiding irreversible damage to the device due to power dissipation. 3. Human Body Model: 100 pF discharged through a 1.5 k resistor following specification JESD22/A114. 4. Machine Model: 200 pF discharged through all pins following specification JESD22/A115. 5. Latchup Testing per JEDEC Standard JESD78. 6. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J-STD-020A. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Range Unit VP Supply Voltage for Amplifier 2.5 to 5.5 V VCC Supply Voltage for Switches 1.65 to 4.5 V VIS Analog Signal Voltage for Switches GND to VCC V VIN Control Input for Switches GND to VCC V TA Operating Ambient Temperature -40 to +85 °C http://onsemi.com 4 NLMD5820 ELECTRICAL CHARACTERISTICS OF AMPLIFIER (Limits apply for TA = +25°C unless otherwise noted) Characteristic Supply Quiescent Current Shutdown Current Symbol Conditions Min Typ Max Unit Idd Vp = 3.6 V, RL = 8.0 Vp = 5.5 V, No Load Vp from 2.5 V to 5.5 V, No Load TA = -40°C to +85°C - 2.15 2.61 - mA - - 3.8 Vp = 4.2 V TA = +25°C TA = +85°C - 0.42 0.45 0.8 2.0 Vp = 5.5 V TA = +25°C TA = +85°C - 0.8 0.9 1.5 - Isd A A Shutdown Voltage High Vsdih 1.2 - - V Shutdown Voltage Low Vsdil - - 0.4 V Switching Frequency Fsw Vp from 2.5 V to 5.5 V TA = -40°C to +85°C 180 240 300 kHz G RL = 8.0 285 k Ri 300 k Ri 315 k Ri V V Output Impedance in Shutdown Mode ZSD - 20 - k Resistance from SD to GND Rs - - 300 - k Output Offset Voltage Vos Vp = 5.5 V - 6.0 - mV Turn On Time Ton Vp from 2.5 V to 5.5 V - 1.0 - s Turn Off Time Toff Vp from 2.5 V to 5.5 V - 1.0 - s Thermal Shutdown Temperature Tsd - - 160 - °C Output Noise Voltage Vn Vp = 3.6 V, f = 20 Hz to 20 kHz no weighting filter with A weighting filter - 65 42 - RL = 8.0 , f = 1.0 kHz, THD+N < 1% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V - 0.22 0.33 0.45 0.67 0.92 - RL = 8.0 , f = 1.0 kHz, THD+N < 10% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V - 0.36 0.53 0.76 1.07 1.49 - RL = 4.0 , f = 1.0 kHz, THD+N < 1% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V - 0.24 0.38 0.57 0.83 1.2 - RL = 4.0 , f = 1.0 kHz, THD+N < 10% Vp = 2.5 V Vp = 3.0 V Vp = 3.6 V Vp = 4.2 V Vp = 5.0 V - 0.52 0.8 1.125 1.58 2.19 - RL = 8.0 , f = 1.0 kHz Vp = 5.0 V, Pout = 1.2 W Vp = 3.6 V, Pout = 0.6 W - 87 87 - RL = 4.0 , f = 1.0 kHz Vp = 5.0 V, Pout = 2.0 W Vp = 3.6 V, Pout = 1.0 W - 79 78 - Gain RMS Output Power Efficiency Po - http://onsemi.com 5 Vrms W W W W % NLMD5820 ELECTRICAL CHARACTERISTICS OF AMPLIFIER (Limits apply for TA = +25°C unless otherwise noted) Characteristic Total Harmonic Distortion + Noise Common Mode Rejection Ratio Power Supply Rejection Ratio Symbol Conditions THD+N Vp = 5.0 V, RL = 8.0 , f = 1.0 kHz, Pout = 0.25 W Vp = 3.6 V, RL = 8.0 , f = 1.0 kHz, Pout = 0.25 W CMRR PSRR Vp from 2.5 V to 5.5 V Vic = 0.5 V to Vp - 0.8 V Vp = 3.6 V, Vic = 1.0 Vpp f = 217 Hz f = 1.0 kHz Vp_ripple_pk-pk = 200 mV, RL = 8.0 , Inputs AC Grounded Vp = 3.6 V f = 217 kHz f = 1.0 kHz Min Typ Max - 0.05 - - 0.06 - - -62 - - -56 -57 - Unit % dB dB - -62 -65 - Min Typ Max DC ELECTRICAL CHARACTERISTICS OF SWITCHES Characteristic Symbol Conditions Control Input High Voltage VIH VCC = 3.0 V VCC = 4.2 V Control Input Low Voltage VIL VCC = 3.0 V VCC = 4.2 V Control Input Leakage Current IIN 1.4 2.0 Unit V 0.7 0.8 V VIN = VCC or GND ±0.1 ±1.0 A ±10 ±100 nA ON State Leakage Current ICOM(ON) 0 V < VCOM, VNC < VCC OFF State Leakage Current INC(OFF) 0 V < VCOM, VNC < VCC ±5 ±50 nA ±1.0 ±2.0 A VCC = 3.0 V VCC = 4.2 V 0.4 0.35 0.5 0.4 RFLAT VCC = 3.0 V VCC = 4.2 V 0.16 0.11 0.20 0.14 RON VCC = 3.0 V VCC = 4.2 V 0.05 0.05 0.05 0.05 Quiescent Current ICC ON Resistance RON RON Flatness RON Matching All Channels ON or OFF, VIN = VCC or GND, IOUT =0 http://onsemi.com 6 NLMD5820 AC ELECTRICAL CHARACTERISTICS OF SWITCHES (Input tr = tf = 3.0 ns) Symbol Parameter Test Conditions Min Typ Max Unit tON Turn-On Time RL = 50 , CL = 35 pF (Figures 43 and 44) 50 ns tOFF Turn-Off Time RL = 50 , CL = 35 pF (Figures 43 and 44) 30 ns CIN Control Pin Input Capacitance VCC = 0 V 3.5 pF CNC NC Port Capacitance VCC = 3.3 V, VIN = 0 V 60 pF CCOM COM Port Capacitance When Switch is Enabled VCC = VIN = 3.3 V 200 pF BW Maximum On-Channel -3 dB Bandwidth or Minimum Frequency Response VIN centered between VCC and GND (Figure 45) 19 MHz VONL Maximum Feed-through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 45) -0.06 dB VISO Off-Channel Isolation f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF VIN centered between VCC and GND (Figure 45) -68 dB Q Charge Injection Select Input to Common I/O VIN = VCC to GND, RIS = 0 , CL = 1.0 nF Q = CL x DVOUT (Figure 46) 38 pC THD Total Harmonic Distortion THD + Noise FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF, VIS = 2.0 V RMS 0.08 % VCT Channel-to-Channel Crosstalk f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50 VIN centered between VCC and GND (Figure 45) -70 dB Ci Ri + Audio Input Signal NLMD5820 INP + OUTM Load Ci Ri - INM 30 kHz Low Pass Filter - OUTP VP Measurement Input GND 4.7 F + Power Supply - Figure 2. Test Setup for Typical Characteristics (Figures 3 - 34) NOTES: 1. Unless otherwise noted, Ci = 100 nF and Ri= 150 k. Thus, the gain setting is 2 V/V and the cutoff frequency of the input high pass filter is set to 10 Hz. Input capacitors are shorted for CMRR measurements. 2. To closely reproduce a real application case, all measurements are performed using the following loads: RL = 8 means Load = 15 H + 8 + 15 H RL = 4 means Load = 15 H + 4 + 15 H Very low DCR 15 H inductors (50 m) have been used for the following graphs. Thus, the electrical load measurements are performed on the resistor (8 or 4 ) in differential mode. 3. For Efficiency measurements, the optional 30 kHz filter is used. An RC low-pass filter is selected with (100 , 47 nF) on each PWM output. http://onsemi.com 7 NLMD5820 TYPICAL CHARACTERISTICS OF AMPLIFIER 100 100 90 90 NLMD5820 DIE TEMPERATURE (°C) EFFICIENCY (%) 80 70 60 50 40 Class AB 30 Vp = 5 V RL = 8 20 10 80 Class AB 70 Vp = 5 V RL = 8 60 50 40 30 0 NLMD5820 20 0 0.2 0.4 0.6 Pout (W) 0.8 0 1 90 55 EFFICIENCY (%) DIE TEMPERATURE (°C) 60 NLMD5820 70 60 50 Class AB 30 20 Vp = 3.6 V RL = 8 10 0.8 1.0 1.2 1.4 Class AB 50 45 Vp = 3.6 V RL = 8 40 35 30 25 NLMD5820 20 0 0 0.1 0.2 0.3 0.4 Pout (W) 0.5 0.6 0 0.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pout (W) Figure 5. Efficiency vs. P out Vp = 3.6 V, RL = 8 , f = 1 kHz Figure 6. Die Temperature vs. P out Vp = 3.6 V, RL = 8 , f = 1 kHz @ TA = +25°C 90 160 80 140 DIE TEMPERATURE (°C) NLMD5820 70 EFFICIENCY % 0.6 Figure 4. Die Temperature vs. Pout Vp = 5 V, RL = 8 , f = 1 kHz @ TA = +25°C 100 40 0.4 Pout (W) Figure 3. Efficiency vs. Pout Vp = 5 V, RL = 8 , f = 1 kHz 80 0.2 60 50 40 Class AB 30 20 Vp = 5 V RL = 4 10 0.5 1 1.5 120 100 Vp = 5 V RL = 4 80 60 40 0 0 Class AB NLMD5820 20 2 0 1.0 Pout (W) Figure 7. Efficiency vs. Pout Vp = 5 V, RL = 4 , f = 1 kHz Figure 8. Die Temperature vs. Pout Vp = 5 V, RL = 4 , f = 1 kHz @ TA = +25°C http://onsemi.com 8 0.5 1.5 Pout (W) 2.0 NLMD5820 TYPICAL CHARACTERISTICS OF AMPLIFIER 100 90 80 90 EFFICIENCY % 70 DIE TEMPERATURE (°C) NLMD5820 60 50 40 Class AB 30 Vp = 3.6 V RL = 4 20 10 Class AB 80 70 Vp = 3.6 V RL = 4 60 50 40 NLMD5820 30 0 20 0 0.2 0.4 0.6 0.8 1 0 1.2 0.2 0.4 Pout (W) 10 1.0 10 Vp = 5.0 V RL = 8 f = 1 kHz 1.0 THD+N (%) THD+N (%) 0.8 Figure 10. Die Temperature vs. Pout Vp = 3.6 V, RL = 4 , f = 1 kHz @ TA = +25°C Figure 9. Efficiency vs. Pout Vp = 3.6 V, RL = 4 , f = 1 kHz NLMD5820 0.1 1.0 Vp = 4.2 V RL = 8 f = 1 kHz NLMD5820 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0 1.6 0.2 0.4 Pout (W) 0.6 0.8 1.0 1.2 Pout (W) Figure 12. THD+N vs. Pout Vp = 4.2 V, RL = 8 , f = 1 kHz Figure 11. THD+N vs. Pout Vp = 5 V, RL = 8 , f = 1 kHz 10 10 Vp = 3.6 V RL = 8 f = 1 kHz 1.0 THD+N (%) THD+N (%) 0.6 Pout (W) NLMD5820 0.1 1.0 Vp = 3 V RL = 8 f = 1 kHz NLMD5820 0.1 0.01 0 0.2 0.4 0.6 0.01 0 0.8 Pout (W) 0.1 0.2 0.3 0.4 Pout (W) Figure 14. THD+N vs. Pout Vp = 3 V, RL = 8 , f = 1 kHz Figure 13. THD+N vs. Pout Vp = 3.6 V, RL = 8 , f = 1 kHz http://onsemi.com 9 0.5 0.6 NLMD5820 TYPICAL CHARACTERISTICS OF AMPLIFIER 10 10 Vp = 5 V RL = 4 f = 1 kHz 1.0 THD+N (%) THD+N (%) Vp = 2.5 V RL = 8 f = 1 kHz NLMD5820 0.1 0.01 0 0.1 0.2 0.3 0.5 1.0 Figure 16. THD+N vs. Pout Vp = 5 V, RL = 4 , f = 1 kHz 2.5 10 Vp = 4.2 V RL = 4 f = 1 kHz 1.0 Vp = 3.6 V RL = 4 f = 1 kHz 0.1 0.5 1.0 1.5 0.01 0 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Pout (W) Figure 17. THD+N vs. Pout Vp = 4.2 V, RL = 4 , f = 1 kHz Figure 18. THD+N vs. Pout Vp = 3.6 V, RL = 4 , f = 1 kHz 10 10 Vp = 2.5 V RL = 4 f = 1 kHz THD+N (%) Vp = 3 V RL = 4 f = 1 kHz THD+N (%) 2.0 Figure 15. THD+N vs. Pout Vp = 2.5 V, RL = 8 , f = 1 kHz Pout (W) 1.0 0.1 0 1.5 Pout (W) THD+N (%) THD+N (%) 0 Pout (W) 0.1 0.01 0 0.1 0.01 0.4 10 1.0 1.0 0.2 0.4 0.6 0.8 1.0 1.0 0.1 0 Pout (W) 0.1 0.2 0.3 0.4 0.5 Pout (W) Figure 20. THD+N vs. Power Out Vp = 2.5 V, RL = 4 , f = 1 kHz Figure 19. THD+N vs. Power Out Vp = 3 V, RL = 4 , f = 1 kHz http://onsemi.com 10 0.6 NLMD5820 TYPICAL CHARACTERISTICS OF AMPLIFIER 2.0 3.0 RL = 8 f = 1 kHz RL = 4 f = 1 kHz 2.5 2.0 NLMD5820 THD+N = 10% Pout (W) Pout (W) 1.5 1.0 NLMD5820 THD+N = 3% THD+N = 10% 1.5 THD+N = 1% 1.0 0.5 0.5 3.0 3.5 4.0 4.5 0 2.5 5.0 3.0 3.5 4.0 4.5 5.0 POWER SUPPLY (V) POWER SUPPLY (V) Figure 21. Output Power vs. Power Supply RL = 8 @ f = 1 kHz Figure 22. Output Power vs. Power Supply RL = 4 @ f = 1 kHz 10 10 1.0 1.0 THD+N (%) THD+N (%) 0 2.5 Vp = 2.5 V Vp = 3.6 V 0.1 Vp = 3.6 V Vp = 2.5 V 0.1 Vp = 5 V Vp = 5 V 100 1000 10000 0.01 10 100000 Figure 24. THD+N vs. Frequency RL = 4 , Pout = 250 mW @ f = 1 kHz -30 -30 -40 -40 Vp = 5 V Inputs to GND RL = 8 -70 100 1000 10000 Vp = 3.6 V Inputs to GND RL = 4 -70 100000 100000 Vp = 5 V -50 -60 Vp = 3.6 V -80 10 10000 Figure 23. THD+N vs. Frequency RL = 8 , Pout = 250 mW @ f = 1 kHz -20 -60 1000 FREQUENCY (Hz) -20 -50 100 FREQUENCY (Hz) PSSR (dB) PSSR (dB) 0.01 10 -80 10 100 1000 10000 100000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 25. PSRR vs. Frequency Inputs Grounded, RL = 8 , Vripple = 200 mvpkpk Figure 26. PSRR vs. Frequency Inputs grounded, RL = 4 , Vripple = 200 mVpkpk http://onsemi.com 11 NLMD5820 -20 3.5 -30 3.0 QUIESCENT CURRENT (mA) CMMR (dB) TYPICAL CHARACTERISTICS OF AMPLIFIER -40 -50 -60 Vp = 3.6 V RL = 8 -70 -80 10 100 1000 10000 2.5 2.0 Thermal Shutdown Vp = 3.6 V RL = 8 1.5 1.0 0.5 0 120 100000 130 FREQUENCY (Hz) 160 Figure 28. Thermal Shutdown vs. Temperature Vp = 5 V, RL = 8 , 900 2.8 RL = 8 800 SHUTDOWN CURRENT (nA) SHUTDOWN CURRENT (nA) 150 TEMPERATURE (°C) Figure 27. PSRR vs. Frequency Vp = 3.6 V, RL = 8 , Vic = 200 mvpkpk 700 600 500 400 300 200 RL = 8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 100 0 2.5 3.5 4.5 1.0 2.5 5.5 3.5 4.5 5.5 POWER SUPPLY (V) POWER SUPPLY (V) Figure 29. Shutdown Current vs. Power Supply RL = 8 Figure 30. Quiescent Current vs. Power Supply RL = 8 1000 1000 Vp = 5 V RL = 8 100 NOISE (Vrms) Vp = 3.6 V RL = 8 NOISE (Vrms) 140 No Weighting 100 No Weighting With A Weighting 10 10 100 With A Weighting 1000 10000 10 10 FREQUENCY (Hz) 100 1000 10000 FREQUENCY (Hz) Figure 31. Noise Floor, Inputs AC Grounded with 1 F Vp = 3.6 V Figure 32. Noise Floor, Inputs AC Grounded with 1 F Vp = 5 V http://onsemi.com 12 NLMD5820 TYPICAL CHARACTERISTICS OF AMPLIFIER 8 11 TA = +85°C TURN OFF TIME (mS) TURN ON TIME (mS) 10 TA = +25°C 9 TA = -40°C 8 7 TA = +25°C TA = -40°C 6 5 TA = +85°C 7 6 2.5 3.5 4.5 4 2.5 5.5 3.5 4.5 5.5 POWER SUPPLY (V) POWER SUPPLY (V) Figure 33. Turn on Time Figure 34. Turn off Time TYPICAL CHARACTERISTICS OF SWITCHES 0 0 -10 -3 -20 -6 -40 BW (dB) XT (dB) -30 -50 -60 -9 -12 -70 -80 -15 -90 -100 0.01 0.1 1 10 -18 0.01 100 FREQUENCY (MHz) 0.1 1 10 FREQUENCY (MHz) Figure 35. Cross Talk vs. Frequency @ VCC = 4.2 V Figure 36. Bandwidth vs. Frequency http://onsemi.com 13 100 NLMD5820 TYPICAL CHARACTERISTICS OF SWITCHES 0.4 0.12 85°C 0.35 0.1 0.3 RON () THD (%) 0.08 0.06 25°C 0.25 -40°C 0.2 0.15 0.04 0.1 0.02 0.05 0 10 100 1000 10000 0 100000 0 0.5 1 1.5 FREQUENCY (Hz) 2.5 3 VIN (V) Figure 37. Total Harmonic Distortion Figure 38. On-Resistance vs. Input Voltage @ VCC = 3.0 V 0.36 0.34 0.4 0.35 3.0 V 0.32 0.3 0.30 85°C 0.28 RON () 0.25 RON () 2 25°C 0.2 -40°C 0.15 0.26 0.24 0.22 4.3 V 0.20 0.1 0.18 0.05 0.16 0 0.5 1 1.5 2 2.5 3 3.5 0.14 4 0 0.5 1 1.5 VIN (V) 2 2.5 3 3.5 4 VIN (V) Figure 39. On-Resistance vs. Input Voltage @ VCC = 4.2 V Figure 40. On-Resistance vs. Input Voltage 0 -10 -20 -30 ISOLATION (dB) 0 -40 -50 -60 -70 -80 -90 -100 -110 -120 0.01 0.1 1 FREQUENCY @ VCC = 3.0 V (MHz) Figure 41. Isolation vs. Frequency http://onsemi.com 14 10 4.5 NLMD5820 VCC DUT VCC Input Output GND VOUT 0.1 F 50 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 42. tBBM (Time Break-Before-Make) VCC Input DUT VCC 0.1 F 50% Output VOUT Open 50% 0V 50 VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 43. tON/tOFF VCC VCC Input DUT Output 50 50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL Input tOFF Figure 44. tON/tOFF http://onsemi.com 15 10% tON NLMD5820 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Logǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 45. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 46. Charge Injection: (Q) http://onsemi.com 16 On Off VOUT NLMD5820 DESCRIPTION INFORMATION Detailed Description The basic structure of the amplifier portion of the NLMD5820 is composed of one analog pre-amplifier, a pulse width modulator and an H-bridge CMOS power stage. The first stage is externally configurable with gain-setting resistor Ri and the internal fixed feedback resistor Rf (the closed-loop gain is fixed by the ratios of these resistors) and the other stage is fixed. The load is driven differentially through two output stages. The differential PWM output signal is a digital image of the analog audio input signal. The human ear is a band pass filter regarding acoustic waveforms, the typical values of which are 20 Hz and 20 kHz. Thus, the user will hear only the amplified audio input signal within the frequency range. The switching frequency and its harmonics are fully filtered. The inductive parasitic element of the loudspeaker helps to guarantee a superior distortion value. the fast turn on and off times, the shutdown signal can be used as a mute signal as well. Turn On and Turn Off Transitions in Case of UDFN8 In case of UDFN8 package, the audio signal is established instantaneously after the rising edge on the shutdown pin. The audio is also suddenly cut once a low level is sent to the amplifier. This way to turn on and off the device in a very fast way also prevents from “pop & click” noise. Shutdown Function The device enters shutdown mode when the shutdown signal is low. During the shutdown mode, the DC quiescent current of the circuit does not exceed 1.5 A. Current Breaker Circuit The maximum output power of the circuit corresponds to an average current in the load of 820 mA. In order to limit the excessive power dissipation in the load if a short-circuit occurs, a current breaker cell shuts down the output stage. The current in the four output MOS transistors are real-time controlled, and if one current exceeds the threshold set to 1.5 A, the MOS transistor is opened and the current is reduced to zero. As soon as the short-circuit is removed, the circuit is able to deliver the expected output power. This patented structure protects the NLMD5820. Since it completely turns off the load, it minimizes the risk of the chip overheating which could occur if a soft current limiting circuit was used. Power Amplifier The output PMOS and NMOS transistors of the amplifier have been designed to deliver the output power of the specifications without clipping. The channel resistance (Ron) of the NMOS and PMOS transistors is typically 0.4. Turn On and Turn Off Transitions in Case of 9 Pin Flip-Chip Package In order to eliminate “pop and click” noises during transition, the output power in the load must not be established or cutoff suddenly. When a logic high is applied to the shutdown pin, the internal biasing voltage rises quickly and, 4 ms later, once the output DC level is around the common mode voltage, the gain is established slowly (5.0 ms). This method to turn on the device is optimized in terms of rejection of “pop and click” noises. Thus, the total turn on time to get full power to the load is 9 ms (typical). The device has the same behavior when it is turned-off by a logic low on the shutdown pin. No power is delivered to the load 5 ms after a falling edge on the shutdown pin. Due to Dual SPST Switch The NLMD5820 features an integrated dual SPST analog switch. The control for the switch is operated independently of the amplifier, allowing the audio system a choice between routing signals through the amplifier or letting them pass unaffected through the switch. When the switch is open, it maintains significant off isolation to minimize the effects of the amplifier output on the system. http://onsemi.com 17 NLMD5820 APPLICATION INFORMATION NLMD5820 PWM Modulation Scheme signal is applied, OUTP duty cycle is greater than 50% and OUTM is less than 50%. With this configuration, the current through the load is 0 A most of the switching period and thus power losses in the load are lowered. The NLMD5820 uses a PWM modulation scheme with each output switching from 0 to the supply voltage. If Vin = 0 V outputs OUTM and OUTP are in phase and no current is flowing through the differential load. When a positive OUTP OUTM +Vp 0V -Vp Load Current 0A Figure 47. Output Voltage and Current Waveforms into an Inductive Loudspeaker DC Output Positive Voltage Configuration Voltage Gain An optional filter can be used for filtering high frequency signal before the speaker. In this case, the circuit consists of two inductors (15 H) and two capacitors (2.2 F). The size of the inductors is linked to the output power requested by the application. A simplified version of this filter requires a 1 F capacitor in parallel with the load, instead of two 2.2 F connected to ground). Cellular phones and portable electronic devices are great applications for Filterless Class-D as the track length between the amplifier and the speaker is short, thus, there is usually no need for an EMI filter. However, to lower radiated emissions as much as possible when used in filterless mode, a ferrite filter can often be used. Select a ferrite bead with the high impedance around 100 MHz and a very low DCR value in the audio frequency range is the best choice. The MPZ1608S221A1 from TDK is a good choice. The package size is 0603. The first stage is an analog amplifier. The second stage is a comparator: the output of the first stage is compared with a periodic ramp signal. The output comparator gives a pulse width modulation signal (PWM). The third and last stage is the direct conversion of the PWM signal with MOS transistors H-bridge into a powerful output signal with low impedance capability. With an 8 load, the total gain of the device is typically set to: 300k Ri Input Capacitor Selection (Cin) The input coupling capacitor blocks the DC voltage at the amplifier input terminal. This capacitor creates a high-pass filter with Rin, the cut-off frequency is given by Fc + 2 1 Ri Ci . Optimum Equivalent Capacitance at Output Stage When using an input resistor set to 150 k, the gain configuration is 2 V/V. In such a case, the input capacitor selection can be from 10 nF to 1 F with cutoff frequency values between 1 Hz and 100 Hz. The NLMD5820 also includes a built in low pass filtering function. It's cut off frequency is set to 20 kHz. If the optional filter described in the above section isn't selected. Cellular phones and wireless portable devices design normally put several Radio Frequency filtering capacitors and ESD protection devices between Filter less Class D outputs and loudspeaker. Those devices are usually connected between amplifier output and ground. In order to achieve the best sound quality, the optimum value of total equivalent capacitance between each output terminal to the ground should be less than or equal to 150 pF. This total equivalent capacitance consists of the radio frequency filtering capacitors and ESD protection device equivalent parasitic capacitance. Optional Output Filter This filter is optional due to the capability of the speaker to filter by itself the high frequency signal. Nevertheless, the high frequency is not audible and filtered by the human ear. http://onsemi.com 18 NLMD5820 15 H 15 H OUTM RL = 8 2.2 F 1.0 F 2.2 F RL = 8 OUTM OUTP 15 H OUTP 15 H Figure 48. Advanced Optional Audio Output Filter Figure 49. Optional Audio Output Filter RL = 8 OUTM FERRITE CHIP BEADS OUTP Figure 50. Optional EMI Ferrite Bead Filter Cs VP Ri Differential Audio Input from DAC INP Ri OUTM INM OUTP SD Input from Microcontroller GND Figure 51. NLMD5820 Application Schematic with Fully Differential Input Configuration Cs Differential Audio Input from DAC Ri Ri VP INP OUTM INM FERRITE CHIP BEADS Input from Microcontroller OUTP SD GND Figure 52. NLMD5820 Application Schematic with Fully Differential Input Configuration and Ferrite Chip Beads as an Output EMI Filter http://onsemi.com 19 NLMD5820 Cs Ci VP Ri Differential Audio Input from DAC INP Ri OUTM INM FERRITE CHIP BEADS Ci OUTP SD Input from Microcontroller GND Figure 53. NLMD5820 Application Schematic with Differential Input Configuration and High Pass Filtering Function Cs Ci VP Ri INP Ri Single-Ended Audio Input from DAC OUTM INM Ci OUTP SD Input from Microcontroller GND Figure 54. NLMD5820 Application Schematic with Single Ended Input Configuration Cs Ci Differential Audio Input from DAC Ri Ri VP INP OUTM INM FERRITE CHIP BEADS Ci Input from Microcontroller OUTP SD GND COM1 NC1 COM2 NC2 Figure 55. NLMD5820 Application Schematic Using Switches as Optional Bypass http://onsemi.com 20 NLMD5820 PACKAGE DIMENSIONS UDFN16 3.2x2.4, 0.4P CASE 517AL-01 ISSUE O A B D PIN ONE REFERENCE 2X 0.10 C 2X DETAIL A OPTIONAL CONSTRUCTION 2X SCALE ÉÉÉÉ ÉÉÉÉ 0.10 C E (A3) TOP VIEW DETAIL B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L A1 DETAIL B OPTIONAL CONSTRUCTION 4X SCALE A (A3) DIM A A1 A3 b D D2 E E2 e K L 0.05 C 16X MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.13 REF 0.15 0.25 3.20 BSC 2.70 2.90 2.40 BSC 1.00 1.20 0.40 BSC 0.20 --0.30 0.50 0.05 C SIDE VIEW NOTE 4 C A1 SOLDERING FOOTPRINT* SEATING PLANE 2.90 D2 16X L DETAIL A 8 1 1.20 2.70 E2 16X 16X K 16 e 1 16X 0.24 0.63 9 16X 0.40 PITCH b e/2 BOTTOM VIEW DIMENSIONS: MILLIMETERS 0.10 C A B 0.05 C *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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