NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 10 mV Offset, 0.07 mV/5C, Low Power, Zero-Drift Operational Amplifier www.onsemi.com The NCS333 family of high precision op amps feature very low input offset voltage and near−zero drift over time and temperature. These low quiescent current amplifiers have high impedance inputs with a common−mode range 100 mV beyond the rails as well as rail−to−rail output swing within 50 mV of the rails. These op amps operate over a wide supply range from 1.8 V to 5.5 V. The NCS333 family exhibits outstanding CMRR without the crossover associated with traditional complementary input stages. The NCS333, as well as the dual version, NCS2333, and the quad version, NCS4333, come in a variety of packages and pinouts. Automotive qualified options are available under NCV prefix. Features • Low Offset Voltage: 10 mV max for NCS333, 30 mV max for • • • • • • • NCS2333 and NCS4333 Zero Drift: 0.07 mV/°C max Low Noise: 1.1 mVpp, 0.1 Hz to 10 Hz Quiescent Current per Channel: 17 mA Typical at 3.3 V Supply Supply Voltage: 1.8 V to 5.5 V Rail−to−Rail Input and Output NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 5 5 1 SOT23−5 SN SUFFIX CASE 483 1 SC70−5 SQ SUFFIX CASE 419A 1 DFN−8 MN SUFFIX CASE 506BW 8 MSOP−8 DM SUFFIX CASE 846A−02 14 1 SOIC−8 D SUFFIX CASE 751 1 SOIC−14 D SUFFIX CASE 751A DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INFORMATION Typical Applications • Temperature Measurements • Transducer Applications • Current Sensing See detailed ordering and shipping information on page 3 of this data sheet. End Products • Battery Powered Instruments • Electronic Scales • Medical Instrumentation This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 6 1 Publication Order Number: NCS333/D NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 DEVICE MARKING INFORMATION Single Channel Configuration NCS333, NCV333 33EAYWG G 33HMG G TSOP−5/SOT23−5 CASE 483 SC70−5 CASE 419A Dual Channel Configuration NCS2333, NCV2333 8 1 NCS 2333 ALYWG G 8 2333 AYWG G 1 DFN8, 3x3, 0.65P CASE 506BW Micro8/MSOP8 CASE 846A−02 Quad Channel Configuration NCS4333, NCV4333 14 NCS4333 AWLYWWG 1 SOIC−14 CASE 751A 33E 33H A Y W M G or G = Specific Device Code (SOT23−5) = Specific Device Code (SC70−5) = Assembly Location = Year = Work Week = Date Code = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 2 1 N2333 ALYW G SOIC−8 CASE 751 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PIN CONNECTIONS Single Channel Configuration NCS333, NCV333 OUT 1 VSS 2 IN+ 3 IN+ 1 VSS 2 IN− 3 5 VDD 4 IN− 5 VDD 4 OUT SC70−5 / SC−88−5 / SOT−353−5 SOT23−5 / TSOP−5 Dual Channel Configuration NCS2333, NCV2333 Quad Channel Configuration NCS4333, NCV4333 OUT 1 1 IN− 1 2 − − 13 IN− 4 IN+ 1 3 + + 12 IN+ 4 VDD 4 IN+ 2 5 + + 10 IN+ 3 IN− 2 6 − − 9 IN− 3 OUT 2 7 14 OUT 4 11 VSS 8 OUT 3 ORDERING INFORMATION Configuration Automotive Device Package Shipping † Single No NCS333SN2T1G SOT23−5 / TSOP−5 3000 / Tape & Reel NCS333ASN2T1G* (In Development) 3000 / Tape & Reel SC70−5 / SC−88−5 / SOT−353−5 NCS333SQ3T2G NCS333ASQ3T2G* (In Development) Dual 3000 / Tape & Reel Yes NCV333SN2T1G* (In Development) SOT23−5 / TSOP−5 3000 / Tape & Reel No NCS2333MNTXG* (In Development) DFN8 3000 / Tape & Reel NCS2333DR2G* (In Development) SOIC−8 2500 / Tape & Reel NCS2333DMR2G* (In Development) MICRO−8 4000 / Tape & Reel NCV2333DR2G* (In Development) SOIC−8 2500 / Tape & Reel NCV2333DMR2G* (In Development) MICRO−8 4000 / Tape & Reel No NCS4333DR2G* (In Development) SOIC−14 2500 / Tape & Reel Yes NCV4333DR2G* (In Development) SOIC−14 2500 / Tape & Reel Yes Quad 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact local sales office for more information www.onsemi.com 3 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 ABSOLUTE MAXIMUM RATINGS Over operating free−air temperature, unless otherwise stated. Parameter Supply Voltage Rating Unit 7 V INPUT AND OUTPUT PINS Input Voltage (Note 1) (VSS) − 0.3 to (VDD) + 0.3 V Input Current (Note 1) ±10 mA Output Short Circuit Current (Note 2) Continuous TEMPERATURE Operating Temperature −40 to +125 °C Storage Temperature −65 to +150 °C Junction Temperature −65 to +150 °C Human Body Model (HBM) 4000 V Machine Model (MM) 200 V Charged Device Model (CDM) 2000 V 100 mA ESD RATINGS (Note 3) OTHER RATINGS Latch−up Current (Note 4) MSL Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Input terminals are diode−clamped to the power−supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less 2. Short−circuit to ground. 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115) 4. Latch−up Current tested per JEDEC standard: JESD78. THERMAL INFORMATION (Note 5) Parameter Thermal Resistance, Junction to Ambient Symbol Package Value Unit qJA SOT23−5/ TSOP5 290 °C/W SC70−5 / SC−88−5 / SOT−353−5 425 Micro8/MSOP8 298 SOIC−8 250 DFN−8 130 SOIC−14 216 5. As mounted on an 80x80x1.5 mm FR4 PCB with 650 mm2 and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA 51.1, 51.2, 51.3 test guidelines RECOMMENDED OPERATING CONDITIONS Parameter Symbol Supply Voltage (VDD − VSS) Specified Operating Range NCS333 Unit VS 1.8 to 5.5 V TA −40 to 105 °C NCS333A, NCV333, NCx2333, NCx4333 Input Common Mode Voltage Range Range −40 to 125 VICMR VSS−0.1 to VDD+0.1 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 4 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit 3.5 10 mV INPUT CHARACTERISTICS Offset Voltage VOS VS = +5 V NCS333 NCx2333, NCx4333 Offset Voltage Drift vs Temp Offset Voltage Drift vs Supply 6.0 30 NCS333 0.03 0.07 NCx2333, VS = 5 V 0.04 0.07 DVOS/DT DVOS/DVS NCS333 Full temperature range 0.32 5 NCx2333, NCx4333 TA = +25°C 0.32 5 Full temperature range Input Bias Current IIB NCS333 ±60 ±200 ±60 ±400 Common Mode Rejection Ratio IOS CMRR NCS333 ±50 ±400 NCx2333, NCx4333 ±50 ±800 VS = 1.8 V 111 VS = 3.3 V 118 TA = +25°C VSS − 0.1 < VCM < VDD + 0.1 VS = 5.0 V 106 VS = 5.5 V Input Resistance Input Capacitance RIN CIN dB 127 180 Common Mode 90 Differential 2.3 Common Mode 4.6 Differential 4.1 Common Mode 7.9 NCx2333 pA 123 Differential NCS333 pA +400 Full temperature range Input Offset Current mV/V 12.6 NCx2333, NCx4333 TA = +25°C mV/°C GW pF OUTPUT CHARACTERISTICS AVOL VSS + 100 mV < VO < VDD − 100 mV Zout−OL Output Voltage High, Referenced to VDD VOH Output Voltage Low, Referenced to VSS VOL Open Loop Voltage Gain Open Loop Output Impedance Output Current Capability 145 dB f = UGBW, IO = 0 mA 300 W TA = +25°C 10 Full temperature range TA = +25°C Full temperature range IO Sinking Current CL 5 mV 50 mV 70 NCS333 25 NCx2333 11 5.0 See Figure 13 www.onsemi.com 50 70 10 Sourcing Current Capacitive Load Drive 106 mA NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit eN fIN = 1 kHz 62 nV / √Hz eP−P fIN = 0.1 Hz to 10 Hz 1.1 mVPP fIN = 0.01 Hz to 1 Hz 0.5 fIN = 10 Hz 350 fA / √Hz NCx2333, NCx4333 135 dB NCS333, NCx4333 350 kHz NCx2333 270 NOISE PERFORMANCE Voltage Noise Density Voltage Noise Current Noise Density iN Channel Separation DYNAMIC PERFORMANCE Gain Bandwidth Product GBWP CL = 100 pF Gain Margin AM CL = 100 pF 18 dB Phase Margin fM CL = 100 pF 55 ° Slew Rate SR G = +1 0.15 V/ms dB POWER SUPPLY Power Supply Rejection Ratio PSRR Turn−on Time tON Quiescent Current IQ NCS333 Full temperature range 106 130 NCx2333, NCx4333, NCV333 TA = +25°C 106 130 Full temperature range 98 VS = 5 V No load, per channel 1.8 V ≤ VS ≤ 3.3 V ms 100 17 25 mA 27 3.3 V < VS ≤ 5.5 V 21 33 35 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 6 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 TYPICAL CHARACTERISTICS 120 100 105 GAIN (dB) 60 90 75 Gain 40 60 20 45 CL = 100 pF RL = 10 kW T = 25°C 0 −20 30 PHASE MARGIN (°) Phase Margin 80 120 110 100 CMRR (dB) 120 40 20 10 0 0 10 100 1k 10k 100k FREQUENCY (Hz) 70 60 50 30 15 −40 T = 25°C 90 80 1M 10 100 Figure 1. Open Loop Gain and Phase Margin vs. Frequency 100k 1M Figure 2. CMRR vs. Frequency 120 3 T = 25°C VS = 5.5 V, VOH T = 25°C 2 OUTPUT SWING (V) 100 PSRR (dB) 1k 10k FREQUENCY (Hz) 80 +PSRR 60 −PSRR 40 VS = 1.8 V, VOH 1 0 VS = 1.8 V, VOL −1 20 −2 0 −3 VS = 5.5 V, VOL 10 100 1k 10k FREQUENCY (Hz) 100k 1M 0 Figure 3. PSRR vs. Frequency 1 2 3 4 5 6 7 OUTPUT CURRENT (mA) 8 9 Figure 4. Output Voltage Swing vs. Output Current www.onsemi.com 7 10 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 TYPICAL CHARACTERISTICS 200 150 100 IIB+ 0 IIB− −50 −100 −150 −200 −0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IIB+ 50 IIB− 0 −50 T = 25°C VS = 5 V −100 −150 −200 −40 2.0 −20 20 40 60 80 100 TEMPERATURE (°C) Figure 5. Input Bias Current vs. Common Mode Voltage Figure 6. Input Bias Current vs. Temperature 5 4 VS = 5.5 V 3 25 15 VS = 5.0 V 2 VS = 3.3 V 1 INPUT (V) 20 VS = 1.8 V 10 4 Input 5 2 0 1 −1 0 VS = 5.0 V AV = +1 RL = 10 kW −3 Per Channel 0 −40 −20 0 20 40 60 80 −4 −100 100 3 Output −2 −1 −2 −3 0 100 200 300 400 TEMPERATURE (°C) TIME (ms) Figure 7. Quiescent Current vs. Temperature Figure 8. Large Signal Step Response 0.20 1.0 0.15 0.5 Input 0.10 3.0 2.5 Input 2.0 0 0.05 VS = 5.0 V AV = −1 RL = 10 kW 0 −0.05 INPUT (V) INPUT AND OUTPUT (V) 0 COMMON MODE VOLTAGE (V) 30 IQ (mA) 100 −0.5 VS = 5.0 V AV = −10 RL = 10 kW −1.0 −1.5 Output 1.5 1.0 0.5 OUTPUT (V) 50 150 OUTPUT (V) T = 25°C VS = 1.8 V INPUT BIAS CURRENT (pA) INPUT BIAS CURRENT (pA) 200 −2.0 0 −0.10 −2.5 −0.5 −0.15 −10 −3.0 −1.0 Output 0 10 20 30 TIME (ms) TIME (50 ms/div) Figure 9. Small Signal Step Response Figure 10. Positive Overvoltage Recovery www.onsemi.com 8 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 TYPICAL CHARACTERISTICS 3.0 1.0 2.5 0.5 500 T = 25°C RL = 10 kW 400 0 1.5 −0.5 VS = 5.0 V AV = −10 RL = 10 kW 1.0 0.5 −1.0 −1.5 Input 0 −2.0 −0.5 −2.5 −1.0 −3.0 OUTPUT (V) SETTLING TIME (ms) INPUT (V) Output 2.0 300 200 100 0 65 60 55 50 45 40 35 30 25 20 15 10 5 0 100 GAIN (V/V) Figure 11. Negative Overvoltage Recovery Figure 12. Setting Time to 0.1% vs. Closed−Loop Gain 1000 VCM = VS/2 RL = 10 kW T = 25°C 750 T = 25°C 500 250 0 −250 −500 −750 −1000 10 100 1000 0 1 2 3 4 5 6 7 8 LOAD CAPACITANCE (pF) TIME (s) Figure 13. Small−Signal Overshoot vs. Load Capacitance Figure 14. 0.1 Hz to 10 Hz Noise 9 10 1000 1000 T = 25°C T = 25°C CURRENT NOISE (fA/√Hz) VOLTAGE NOISE (nV/√Hz) 10 TIME (50 ms/div) VOLTAGE (nV) OVERSHOOT (%) 1 100 100 10 10 1 10 100 1000 1 10,000 10 100 1000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 15. Voltage Noise Density vs. Frequency Figure 16. Current Noise Density vs. Frequency www.onsemi.com 9 10,000 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 APPLICATIONS INFORMATION APPLICATION CIRCUITS to reduce power loss across the resistor. The op amp amplifies the voltage drop across the sense resistor with a gain set by external resistors R1, R2, R3, and R4 (where R1 = R2, R3 = R4). Precision resistors are required for high accuracy, and the gain is set to utilize the full scale of the ADC for the highest resolution. Low−Side Current Sensing The goal of low−side current sensing is to detect over−current conditions or as a method of feedback control. A sense resistor is placed in series with the load to ground. Typically, the value of the sense resistor is less than 100 mW R3 VLOAD VDD VDD VDD Load R1 Microcontroller + ADC RSENSE control − R2 R4 Figure 17. Low−Side Current Sensing Differential Amplifier for Bridged Circuits produced is relatively small and needs to be amplified before going into an ADC. Precision amplifiers are recommended in these types of applications due to their high gain, low noise, and low offset voltage. Sensors to measure strain, pressure, and temperature are often configured in a Wheatstone bridge circuit as shown in Figure 18. In the measurement, the voltage change that is VDD VDD − + Figure 18. Bridge Circuit Amplification EMI Susceptibility and Input Filtering General Layout Guidelines Op amps have varying amounts of EMI susceptibility. Semiconductor junctions can pick up and rectify EMI signals, creating an EMI−induced voltage offset at the output, adding another component to the total error. Input pins are the most sensitive to EMI. The NCS333 op amp family integrates low−pass filters to decrease sensitivity to EMI. To ensure optimum device performance, it is important to follow good PCB design practices. Place 0.1 mF decoupling capacitors as close as possible to the supply pins. Keep traces short, utilize a ground plane, choose surface−mount components, and place components as close as possible to the device pins. These techniques will reduce susceptibility to electromagnetic interference (EMI). Thermoelectric effects can create an additional temperature dependent offset voltage at the input pins. To reduce these effects, use metals with low thermoelectric−coefficients and prevent temperature gradients from heat sources or cooling fans. www.onsemi.com 10 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 0.2 (0.008) D 5 PL B M M N J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE K NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS DFN8, 3x3, 0.65P CASE 506BW ISSUE O A B D L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 PIN ONE REFERENCE 2X 0.10 C ÉÉÉ ÉÉÉ ÉÉÉ 0.10 C 2X DETAIL A OPTIONAL CONSTRUCTIONS E ÉÉ ÉÉ EXPOSED Cu TOP VIEW (A3) DETAIL B 0.05 C DIM A A1 A3 b D D2 E E2 e K L L1 MOLD CMPD DETAIL B A OPTIONAL CONSTRUCTIONS MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 2.30 2.50 3.00 BSC 1.55 1.75 0.65 BSC 0.20 −−− 0.35 0.45 0.00 0.15 0.05 C NOTE 4 SIDE VIEW C RECOMMENDED SOLDERING FOOTPRINT* SEATING PLANE D2 DETAIL A 1 8X A1 2.50 4 L E2 8X K 8 5 e/2 e 8X 1.75 ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ 1 b 0.65 PITCH 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW 8X 0.62 3.30 8X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 13 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE J D HE PIN 1 ID NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. E b 8 PL 0.08 (0.003) −T− DIM A A1 b c D E e L HE e M T B S A S SEATING PLANE A 0.038 (0.0015) A1 MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 L c RECOMMENDED SOLDERING FOOTPRINT* 8X 8X 0.48 0.80 5.25 0.65 PITCH DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 14 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.021 0.016 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 15 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS D SOIC−14 NB CASE 751A−03 ISSUE K A B 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 8 A3 E H L 1 0.25 M DETAIL A 7 B 13X M b 0.25 M C A S B S e DETAIL A h A X 45 _ M A1 C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 16 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCS333/D