SPM6G080-060D

SENSITRON
SEMICONDUCTOR
SPM6G080-060D
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE
(Tj=250C UNLESS OTHERWISE SPECIFIED)
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
BVCES
Collector to Emitter Breakdown Voltage
600
-
-
V
-
-
80
A
IC = 250 µA, VGE = 0V
Continuous Collector Current
TC = 25 OC
IC
O
TC = 90 C
70
Pulsed Collector Current, 1mS
ICM
-
-
170
A
Gate to Emitter Voltage
VGE
-
-
+/-20
V
Gate-Emitter Leakage Current , VGE = +/-20V
IGES
-
-
+/- 100
nA
Zero Gate Voltage Collector Current
ICES
-
1
mA
10
mA
V
VCE = 600 V, VGE=0V Ti=25oC
VCE = 480 V, VGE=0V Ti=125oC
Collector to Emitter Saturation Voltage,
O
TC = 25 C
VCE(SAT)
-
1.7
2.0
RθJC
-
-
0.45
IC
-
-
40
IC = 60A, VGE = 15V,
Maximum Thermal Resistance
o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current
TC = 25 OC
O
TC = 90 C
Pulsed Collector Current, 0.5mS
A
25
ICM
-
-
120
A
2
watt
80
Joules
Brake Resistor SPECIFICATIONS
Maximum Continuous power dissipation
Pd
Impulse Energy
Maximum operating Junction Temperature
Tjmax
-40
-
150
o
Maximum Storage Junction Temperature
Tjmax
-55
-
150
o
.
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Page 1 of 7
C
C
SPM6G080-060D
SENSITRON
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
Over-Temperature Shutdown
Over-Temperature Shutdown
Tsd
Over-Temperature Output
Tso
100
110
C
10mV/oC
10
Over-Temperature Shutdown Hysteresis
o
120
o
20
C
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage
PIV
600
-
-
V
O
Continuous Forward Current, TC = 90 C
IF
-
-
60
A
Forward Surge Current, tp = 10 msec
IFSM
-
-
300
A
Diode Forward Voltage,
VF
-
1.4
1.7
V
Diode Reverse Recovery Time
(IF=60A, VRR=300V , di/dt=200 A/µs)
trr
-
90
160
nsec
Maximum Thermal Resistance
RθJC
-
-
0.8
o
Supply Voltage
VCC
10
15
20
V
Input On Current
HIN, LIN
2
5.0
mA
Opto-Isolator Logic High Input Threshold
Ith
-
1.6
-
mA
Input Reverse Breakdown Voltage
BVin
5.0
-
-
V
Input Forward Voltage @ Iin = 5mA
VF
-
1.5
1.7
V
Under Voltage Lockout
VCCUV
11.5
-
12.5
V
Itrip-ref
2.9
3.0
3.1
V
nsec
IF = 60A
C/W
Gate Driver
ITRIP Reference Voltage
(1)
Input-to-Output Turn On Delay
tond
-
800
Output Turn On Rise Time
tr
-
100
Input-to-Output Turn Off Delay
Output Turn Off Fall Time
toffd
@ VCC=300V, IC=50A, TC = 25
tf
Input-Output Isolation Voltage
-
-
1000
100
1000
-
-
(1) ITRIP Cycle-by cycle current limit is internally set to 70A peak. The set point can be lowered by connecting a resistor
between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref
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Page 2 of 7
V
SPM6G080-060D
SENSITRON
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
Pin Description
Pin Number
Function
Pin Number
Function
1
Isolated Input for Low-side IGBT of
Phase A
17
2
Return for Input at 1
18
Fault Output
3
Isolated Input for High-side IGBT of
Phase A
19
Fault Clear Input
4
Return for Input at 3
20
5
Isolated Input for Low -side IGBT of
Phase B
21
6
Return for Input at 5
22
DC Bus Current Output with Total Gain of
0.0365 V/A
7
Isolated Input for High-side IGBT of
Phase B
23
Case Temperature Output with a gain of
0.010 V/oC
8
Return for Input at 7
24
Brake IGBT Gate Input
9
Isolated Input for Low-side IGBT of
Phase C
25
Brake IGBT Emitter Input. This input is
internally connected to Signal Ground
10
Return for Input at 9
26 to 30
DC Bus return
11
Isolated Input for High-side IGBT of
Phase C
31 , 32
Brake Resistor Terminal. Brake Resistor
Shall be Connected Between These
Terminals and +VDC
12
Return for Input at 11
33 to 37
DC Bus “+VDC” input
13
NC
38 to 42
Phase C output
14
NC
43 to 47
Phase B output
48 to 52
Phase A output
15
16
SD
(3)
+15V Input
Case
+15V Rtn (Signal Ground)
(3)
(3)
+5V Output
Over-Current Trip Set point
Isolated
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(3)
SPM6G080-060D
SENSITRON
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
Package Drawing Top View:
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SENSITRON
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
SPM6G080-060D
Package Drawing Side View:
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SPM6G080-060D
SENSITRON
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
Application Notes:
a- Shutdown Feature:
1- SD is a dual function input/output, active low input. It is internally pulled high. As a low input
shuts down all IGBTs regardless of the Hin and Lin signals.
2- SD is also internally activated by the over-temperature shutdown, over-current limit, undervoltage shutdown, and desaturation protection.
3- Over-temperature shutdown, and over-current limit are not latching features.
4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above
the threshold limit.
5- Desaturation shutdown is a latching feature and internally reset after 300 msec.
6- When any of the internal protection features is activated, SD is pulled down.
7- SD can be used to shutdown all IGBTs except the brake IGBT by an external command.
An open collector switch shall be used to pull down SD externally.
8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault
situation.
b- Fault Output Feature:
1- Pin 18 Flt is a dual function pin. It is internally pulled high. If pulled down, it will freeze the status
of all the six IGBTs regardless of the Hin and Lin signals
2- Pin 18 as an output reports desaturation protection activation. When desaturation protection
is activated a low output for about 9 µsec is reported.
3- If any other protection feature is activated, it will not be reported by Pin 18.
c- Fault Clear Output:
1- Pin 19 is a fault clear input. It can be used to reset a latching fault condition, due to desaturation
protection.
2- Pin 19 is internally pulled down. A latching fault due to desaturation can be cleared by pulling
high this input.
3- An internal fault clear is activated after 300 msec delay. If desired to clear the fault earlier, this
input can be used.
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Page 6 of 7
SPM6G080-060D
SENSITRON
TECHNICAL DATA
Data Sheet 4098, Rev. D.1
Cleaning Process:
Suggested precaution following cleaning procedure:
If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the
parts be baked immediately after cleaning. This is to remove any moisture that may have
permeated into the device during the cleaning process. For aqueous based solutions, the
recommended process is to bake for at least 2 hours at 125oC.
Do not use solvents based cleaners.
Recommended Soldering Procedure:
Signal pins 1-24: 210C for 10 seconds max
Power pins 25 to 52: 260C for 10 seconds max. Pre-warm module to 125C to aid in power pins
soldering.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
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maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
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Page 7 of 7