Si4431BDY Datasheet

Si4431BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)
0.030 at VGS = - 10 V
- 7.5
0.050 at VGS = - 4.5 V
- 5.8
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
5
D
G
4
S
G
Top View
D
Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)
Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Steady State
- 30
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 7.5
- 5.7
- 6.0
- 4.6
- 30
- 2.1
- 1.2
2.5
1.5
1.6
0.9
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
± 20
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
10 s
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
38
70
50
85
°C/W
Maximum Junction-to-Foot
Steady State
RthJF
22
28
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
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Si4431BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
- 10
RDS(on)
Forward Transconductancea
- 3.0
± 100
VDS = - 5 V, VGS = - 10 V
- 30
VDS = - 5 V, VGS = - 4.5 V
-7
µA
A
VGS = - 10 V, ID = - 7.5 A
0.023
0.030
VGS = - 4.5 V, ID = - 5.8 A
0.036
0.050
gfs
VDS = - 15 V, ID = - 7.5 A
18
VSD
IS = - 2.1 A, VGS = 0 V
- 0.78
- 1.1
13
20
Ω
S
V
b
Dynamic
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
VDS = - 15 V, VGS = - 5 V, ID = - 7.5 A
6
10
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
nC
3.6
IF = - 2.1 A, dI/dt = 100 A/µs
20
10
20
70
110
47
70
45
80
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
4V
VGS = 10 thru 5 V
24
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
3V
6
18
12
TC = 125 °C
6
25 °C
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
4.5
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
Si4431BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
1600
0.06
1200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1400
VGS = 4.5 V
0.04
VGS = 10 V
0.02
Ciss
1000
800
600
400
Coss
Crss
200
0.00
0
0
5
10
15
20
25
30
0
6
ID - Drain Current (A)
12
30
Capacitance
10
1.6
VDS = 15 V
ID = 7.5 A
VGS = 10 V
ID = 7.5 A
8
1.4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
4
2
1.2
1.0
0.8
0
0
5
10
15
20
0.6
- 50
25
- 25
0
Qg - Total Gate Charge (nC)
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.10
R DS(on) - On-Resistance (Ω)
30
TJ = 150 °C
10
TJ = 25 °C
1
0.0
25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
18
0.08
ID = 2 A
ID = 7.5 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
10
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Si4431BDY
Vishay Siliconix
0.6
50
0.4
40
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.0
- 0.2
30
20
10
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
10- 3
10- 2
10- 1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
100
600
IDM Limited
Limited by RDS(on)*
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
TA = 25 °C
Single Pulse
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
0.02
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
Si4431BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72092.
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000