Si4431BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = -10 V -7.5 0.050 @ VGS = -4.5 V -5.8 -30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V - 7.5 -5.7 - 6.0 -4.6 ID TA = 70_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A -30 -2.1 -1.2 2.5 1.5 1.6 0.9 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Steady State Steady State RthJA RthJF Typical Maximum 38 50 70 85 22 28 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72092 S-22437—Rev. A, 20-Jan-03 www.vishay.com 1 Si4431BDY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = -250 mA -1.0 Typ Max Unit -3.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = -24 V, VGS = 0 V -1 VDS = -24 V, VGS = 0 V, TJ = 70_C -10 m mA VDS = -5 V, VGS = -10 V -30 A VDS = -5 V, VGS = -4.5 V -7 A VGS = -10 V, ID = -7.5 A 0.023 0.030 VGS = -4.5 V, ID = -5.8 A 0.036 0.050 gfs VDS = -15 V, ID = -7.5 A 18 VSD IS = -2.1 A, VGS = 0 V -0.78 -1.1 13 20 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "20 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 6 Turn-On Delay Time td(on) 10 Rise Time VDS = -15 V, VGS = -5 V, ID = -7.5 A tr Turn-Off Delay Time VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.6 IF = -2.1 A, di/dt = 100 A/ms nC 20 10 20 70 110 47 70 45 80 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 4V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 3V 6 18 12 TC = 125_C 6 25_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 -55 _C 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72092 S-22437—Rev. A, 20-Jan-03 Si4431BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1600 1400 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 1200 Ciss 1000 800 600 Coss 400 Crss 200 0.00 0 0 5 10 15 20 25 0 30 6 ID - Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 0.6 -50 25 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 30 I S - Source Current (A) 12 0.08 ID = 2 A ID = 7.5 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72092 S-22437—Rev. A, 20-Jan-03 1.2 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4431BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 50 0.4 40 ID = 250 mA Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.2 0.0 30 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72092 S-22437—Rev. A, 20-Jan-03 Si4431BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 72092 S-22437—Rev. A, 20-Jan-03 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5