Si3456BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 9.0596 N/A 2.7510 RT2 10.4825 N/A 9.7601 RT3 34.9521 N/A 14.3671 RT4 55.3377 N/A 13.2693 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 1.2529 m N/A 301.8065 u CT2 269.9715 m N/A 5.5847 m CT3 7.6456 m N/A 19.1707 m CT4 1.4475 N/A 3.1568 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73811 Revision 01-Mar-06 www.vishay.com 1 Si3456BDV_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 5.9193 N/A 3.6533 RF2 26.0868 N/A 12.3712 RF3 22.4318 N/A 13.9850 RF4 55.0698 N/A 9.9911 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 549.2082 u N/A 174.5804 u CF2 3.3792 m N/A 1.7302 m CF3 30.0263 m N/A 131.0586 u CF4 1.3573 N/A 19.6276 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73811 Revision 01-Mar-06 Si3456BDV_RC Vishay Siliconix Document Number: 73811 Revision 01-Mar-06 www.vishay.com 3