Si3456BDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.0 0.052 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S Ordering Information: Si3456BDV-T1—E3 Marking Code: N-Channel MOSFET 6Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 6.0 4.5 4.8 IDM 3.6 "30 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 55 62.5 92 110 28 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72544 S-404024—Rev. C, 15-Mar-04 www.vishay.com 1 Si3456BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 6 A 0.028 0.035 VGS = 4.5 V, ID = 4.9 A 0.041 0.052 gfs VDS = 15 V, ID = 6 A 12 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 8.6 13 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 6 A 1.8 nC 1.5 f = 1 MHz 2.8 4.8 td(on) 10 15 tr 15 25 25 40 10 15 20 40 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.4 IF = 1.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 6 V 35 25_C 30 I D − Drain Current (A) I D − Drain Current (A) 30 25 20 4V 15 10 5 25 125_C 20 15 10 5 3V 0 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 TC = −55_C 35 5V 5 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72544 S-404024—Rev. C, 15-Mar-04 Si3456BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 800 700 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.10 0.06 VGS = 4.5 V 0.04 VGS = 10 V 600 Ciss 500 400 300 200 0.02 Coss Crss 100 0.00 0 0 5 10 15 20 25 30 35 0 40 5 10 ID − Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 6 A VGS = 10 V ID = 6 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 20 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 2 4 6 8 0.6 −50 10 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 40 I S − Source Current (A) 15 0.08 0.06 ID = 6 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72544 S-404024—Rev. C, 15-Mar-04 1.4 1.6 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3456BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 20 −0.4 10 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 100 10 100 600 Safe Operating Area IDM Limited rDS(on) Limited 10 I D − Drain Current (A) 1 Time (sec) 1 0.1 P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 TA = 25_C Single Pulse BVDSS Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 92_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72544 S-404024—Rev. C, 15-Mar-04 Si3456BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72544 S-404024—Rev. C, 15-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5