VISHAY SI3456BDV

Si3456BDV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.035 @ VGS = 10 V
6.0
0.052 @ VGS = 4.5 V
4.9
D TrenchFETr Power MOSFET
D 100% Rg Tested
(1, 2, 5, 6) D
TSOP-6
Top View
3 mm
1
6
2
5
3
4
(3) G
2.85 mm
(4) S
Ordering Information: Si3456BDV-T1—E3
Marking Code:
N-Channel MOSFET
6Bxxx
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
6.0
4.5
4.8
IDM
3.6
"30
1.7
0.9
2.0
1.1
1.3
0.7
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
55
62.5
92
110
28
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
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Si3456BDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
30
VDS w 5 V, VGS = 10 V
rDS(on)
mA
A
VGS = 10 V, ID = 6 A
0.028
0.035
VGS = 4.5 V, ID = 4.9 A
0.041
0.052
gfs
VDS = 15 V, ID = 6 A
12
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
8.6
13
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 10 V, ID = 6 A
1.8
nC
1.5
f = 1 MHz
2.8
4.8
td(on)
10
15
tr
15
25
25
40
10
15
20
40
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
1.4
IF = 1.7 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
VGS = 10 thru 6 V
35
25_C
30
I D − Drain Current (A)
I D − Drain Current (A)
30
25
20
4V
15
10
5
25
125_C
20
15
10
5
3V
0
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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TC = −55_C
35
5V
5
0
1
2
3
4
5
6
VGS − Gate-to-Source Voltage (V)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
800
700
0.08
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.10
0.06
VGS = 4.5 V
0.04
VGS = 10 V
600
Ciss
500
400
300
200
0.02
Coss
Crss
100
0.00
0
0
5
10
15
20
25
30
35
0
40
5
10
ID − Drain Current (A)
Gate Charge
25
30
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 6 A
VGS = 10 V
ID = 6 A
8
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
20
VDS − Drain-to-Source Voltage (V)
10
6
4
2
1.2
1.0
0.8
0
0
2
4
6
8
0.6
−50
10
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.10
r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ − Junction Temperature (_C)
40
I S − Source Current (A)
15
0.08
0.06
ID = 6 A
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
1.4
1.6
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
ID = 250 mA
−0.0
Power (W)
V GS(th) Variance (V)
0.2
−0.2
30
20
−0.4
10
−0.6
−0.8
−50
−25
0
25
50
75
100
125
0
10−3
150
10−2
10−1
TJ − Temperature (_C)
100
10
100
600
Safe Operating Area
IDM Limited
rDS(on) Limited
10
I D − Drain Current (A)
1
Time (sec)
1
0.1
P(t) = 0.0001
P(t) = 0.001
ID(on)
Limited
P(t) = 0.01
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 92_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
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