SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP ® Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-220AA (SMP) TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 30 V, 40 V IFSM 30 A EAS 10 mJ VF 0.40 V, 0.45 V TJ max. 150 °C Package DO-220AA (SMP) Diode variations Single Note • These devices are not AEC-Q101 qualified MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS1P3 SS1P4 13 14 30 40 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range V EAS 10 mJ dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C Revision: 13-Apr-15 Document Number: 88935 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage TJ = 25 °C IF = 1.0 A TJ = 125 °C TJ = 25 °C Maximum reverse current at rated VR TJ = 125 °C Typical junction capacitance SYMBOL SS1P3 SS1P4 0.50 0.53 0.40 0.45 VF (1) IR (2) 4.0 V, 1 MHz CJ UNIT V 150 μA 15 mA 70 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL SS1P3 SS1P4 RJA (1) 105 RJL (1) 15 RJC (1) 25 Typical thermal resistance UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R JL is measured at the terminal of cathode band. RJC is measured at the top center of the body ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS1P3-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel SS1P3-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 0.6 SS1P3 Resistive or Inductive Load 0.5 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 0.8 0.6 0.4 TL Measured at the Cathode Band Terminal 0.2 D = 0.8 D = 0.5 0.4 D = 0.3 D = 0.2 0.3 D = 1.0 D = 0.1 T 0.2 0.1 D = tp/T tp 0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 13-Apr-15 Document Number: 88935 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor 100 D = 0.8 SS1P4 D = 0.5 Average Power Loss (W) 0.5 D = 0.3 D = 0.2 0.4 D = 1.0 D = 0.1 0.3 T 0.2 0.1 D = tp/T tp Instantaneous Forward Current (A) 0.6 0 0 0.2 0.4 0.6 0.8 1.0 1 TJ = 25 °C SS1P4 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Typical Instantaneous Forward Characteristics 1000 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) 10 0.1 0.1 1.2 40 30 20 10 TJ = 150 °C 100 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 0 1 10 10 100 20 30 40 50 60 70 80 90 100 Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Leakage Characteristics 1000 Junction Capacitance (pF) 100 Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 25 °C 100 10 SS1P3 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance 100 Revision: 13-Apr-15 Document Number: 88935 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) 1000 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 9 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.050 (1.27) Revision: 13-Apr-15 Document Number: 88935 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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