VISHAY SS1P3

New Product
SS1P3, SS1P4
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
®
• Ideal for automated placement
eSMP Series
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
DO-220AA (SMP)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
1.0 A
VRRM
30 V, 40 V
IFSM
30 A
EAS
10 mJ
VF
0.40 V, 0.45 V
TJ max.
150 °C
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS1P3
SS1P4
13
14
30
40
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
IFSM
30
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
10
mJ
dV/dt
10 000
V/μs
TJ, TSTG
- 55 to + 150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Document Number: 88935
Revision: 19-Apr-11
V
For technical questions within your region, please contact one of the following:
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS1P3, SS1P4
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
IF = 1.0 A
SYMBOL
TJ = 25 °C
0.53
0.40
0.45
4.0 V, 1 MHz
UNIT
V
IR (2)
TJ = 125 °C
Typical junction capacitance
MAX.
0.50
VF (1)
TJ = 125 °C
TJ = 25 °C
Maximum reverse current at rated VR
TYP.
150
μA
15
mA
80
pF
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
SS3P4
(1)
UNIT
105
RJL (1)
15
RJC (1)
25
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
JL is measured
at the terminal of cathode band. RJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS1P3-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SS1P3-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
0.6
SS1P3
Resistive or Inductive Load
0.5
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
0.8
0.6
0.4
TL Measured
at the Cathode Band Terminal
0.2
D = 0.8
D = 0.5
0.4
D = 0.3
D = 0.2
0.3
D = 1.0
D = 0.1
T
0.2
0.1
D = tp/T
tp
0
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
Document Number: 88935
[email protected], [email protected], [email protected]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS1P3, SS1P4
Vishay General Semiconductor
100
D = 0.8
SS1P4
D = 0.5
Average Power Loss (W)
0.5
D = 0.3
D = 0.2
0.4
D = 1.0
D = 0.1
0.3
T
0.2
0.1
D = tp/T
tp
Instantaneous Forward Current (A)
0.6
0
0
0.2
0.4
0.6
0.8
1.0
1
TJ = 25 °C
SS1P4
1.2
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Typical Instantaneous Forward Characteristics
1000
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
10
0.1
0.1
40
30
20
10
0
TJ = 150 °C
100
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
0.0001
1
10
10
100
20
30
40
50
60
70
80
90
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Leakage Characteristics
100
1000
TJ = 150 °C
10
Junction Capacitance (pF)
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 125 °C
TJ = 125 °C
1
TJ = 25 °C
100
10
SS1P3
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
Document Number: 88935
Revision: 19-Apr-11
100
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS1P3, SS1P4
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
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0.025 0.030
(0.635) (0.762)
0.100
(2.54)
0.050
(1.27)
For technical questions within your region, please contact one of the following:
Document Number: 88935
[email protected], [email protected], [email protected]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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