B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS IF(AV) 1.0 A VRRM 20 V, 30 V, 40 V, 50 V, 60 V IFSM 30 A VF 0.52 V, 0.75 V TJ max. 125 °C, 150 °C Package DO-214AC Diode variations Single For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Note • These devices are not AEC-Q101 qualified MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code B120 B130 B140 B150 B160 B12 B13 B14 B15 B16 20 30 40 50 60 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A dV/dt 10 000 V/μs Voltage rate of change (rated VR) Operating junction temperature range - 65 to + 125 TJ Storage temperature range TSTG - 65 to + 150 - 65 to + 150 °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage TEST CONDITIONS 1.0 A Maximum reverse current at rated VR SYMBOL VF TA = 25 °C TA = 100 °C (1) IR (2) B120 B130 B140 0.52 B150 B160 0.75 0.2 6.0 5.0 UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 13-Aug-13 Document Number: 88946 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance B120 B130 B140 RJA (1) 95 RJL (1) 30 B150 B160 UNIT °C/W Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B140-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel B140-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 Resistive or Inductive Load B150, B160 B150, B160 0.8 B120, B130, B140 0.6 0.4 PCB Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 0 D = tp/T tp 0.8 1.0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Forward Power Loss Characteristics 0.8 40 B120, B130, B140 Peak Forward Surge Current (A) D = 0.8 0.7 Average Power Loss (W) D = 0.8 0.7 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 D = tp/T tp 0.8 1.0 0 30 20 10 0 0 0.2 0.4 0.6 1.2 1 10 100 Average Forward Current Number of Cycles at 50 Hz Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics Revision: 13-Aug-13 Document Number: 88946 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 www.vishay.com Vishay General Semiconductor 100 000 TJ = 150 °C Instantaneous Reverse Current (μA) Instantaneous Forward Current (A) 10 TJ = 125 °C 1 TJ = 25 °C 0.1 B120, B130, B140 B120, B130, B140 B150, B160 1000 100 TJ = 125 °C TJ = 25 °C 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Leakage Characteristics 1000 10 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) TJ = 150 °C 10 000 TJ = 125 °C 1 TJ = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 B120, B130, B140 B150, B160 B150, B160 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 10 1 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 6 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 13-Aug-13 Document Number: 88946 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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