CD4049UBMS Data Sheet December 1992 File Number 3315 CMOS Hex Buffer/Converter Features The CD4049UBMS is an inverting hex buffer and features logic level conversion using only one supply (voltage (VCC). The input signal high level (VIH) can exceed the VCC supply voltage when this device is used for logic level conversions. This device is intended for use as CMOS to DTL/TTL converters and can drive directly two DTL/TTL loads. (VCC = 5V, VOL ≤ 0.4V, and IOL ≥ 3.3mA. • High Voltage Type (20V Rating) The CD4049UBMS is designated as replacement for CD4009UB. Because the CD4049UBMS requires only one power supply, it is preferred over the CD4009UB and CD4010B and should be used in place of the CD4009UB in all inverter, current driver, or logic level conversion applications. In these applications the CD4049UBMS is pin compatible with the CD4009UB, and can be substituted for this device in existing as well as in new designs. Terminal No. 16 is not connected internally on the CD4049UBMS, therefore, connection to this terminal is of no consequence to circuit operation. For applications not requiring high sink current or voltage conversion, the CD4069UB Hex Inverter is recommended. • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Inverting Type • High Sink Current for Driving 2 TTL Loads • High-to-Low Level Logic Conversion • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings Applications • CMOS to DTL/TTL Hex Converter • CMOS Current “Sink” or “Source” Driver • CMOS High-to-Low Logic Level Converter Pinout CD4049UBMS TOP VIEW The CD4049UBMS is supplied in these 16 lead outline packages: VCC 1 16 NC Braze Seal DIP H4S G=A 2 15 L = F Frit Seal DIP H1E A 3 14 F Ceramic Flatpack H3X H=B 4 13 NC B 5 12 K = E I=C 6 11 E C 7 10 J = D VSS 8 Functional Diagram 9 D Schematic A B C 3 2 5 4 7 6 VCC G=A H=B P I=C R IN 9 D VCC VSS 10 J=D OUT N 1 8 E 11 12 14 15 K=E VSS NC = 13 NC = 16 F 1 L=F FIGURE 1. SCHEMATIC DIAGRAM, 1 OF 6 IDENTICAL UNITS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4049UBMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125oC - 200 µA 3 -55oC - 2 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV 14.95 - V CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current Input Leakage Current IIL IIH VIN = VDD or GND VIN = VDD or GND LIMITS GROUP A SUBGROUPS VDD = 20 VDD = 18V Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC +25oC, +125oC, -55oC Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1 +25oC 2.6 - mA Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 3.2 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 8.0 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 24 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.8 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -3.2 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.8 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -6.0 mA -2.8 -0.7 V 0.7 2.8 V N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC - 1.0 V Functional F VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 2 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. CD4049UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Propagation Delay Transition Time Transition Time SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTE 1, 2) LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC - 65 ns 10, 11 +125oC, -55oC - 88 ns 9 +25oC - 120 ns 10, 11 +125oC, -55oC - 162 ns 9 +25oC - 60 ns 10, 11 +125oC, -55oC - 81 ns 9 +25oC - 160 ns 10, 11 +125oC, -55oC - 216 ns VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 1 µA +125oC - 30 µA -55oC, +25oC - 2 µA +125oC - 60 µA -55oC, +25oC - 2 µA +125oC - 120 µA - 50 mV VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND 1, 2 1, 2 Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V +25oC, +125oC, -55oC +125oC 9.95 - V 1.8 - mA -55oC 3.3 - mA +125oC 2.4 - mA -55oC 4.0 - mA +125oC 5.6 - mA -55oC 10 - mA +125oC 18 - mA -55oC 26 - mA +125oC - -0.48 mA -55oC - -0.81 mA +125oC - -1.55 mA -55oC - -2.6 mA +125oC - -1.18 mA -55oC - -2.0 mA +125oC - -3.1 mA -55oC Output Voltage VOH VDD = 10V, No Load 1, 2 Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1, 2 Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 - -5.2 mA Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC - 2 V Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC 8 - V 3 CD4049UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Propagation Delay TPHL Propagation Delay TPLH Propagation Delay TPHL Propagation Delay TPLH Transition Time TTHL Transition Time TTLH Input Capacitance CIN CONDITIONS NOTES TEMPERATURE MIN MAX UNITS VIN = 10V, VDD = 5V 1, 2, 3 +25oC - 30 ns VIN = 10V, VDD = 10V 1, 2, 3 +25oC - 40 ns VIN = 10V, VDD = 5V 1, 2, 3 +25oC - 90 ns VIN = 10V, VDD = 10V 1, 2, 3 +25oC - 65 ns VIN = 15V, VDD = 5V 1, 2, 3 +25oC - 20 ns VIN = 15V, VDD = 15V 1, 2, 3 +25oC - 30 ns VIN = 15V, VDD = 5V 1, 2, 3 +25oC - 90 ns VIN = 15V, VDD = 15V 1, 2, 3 +25oC - 50 ns VDD = 10V, VIN = VDD OR GND 1, 2, 3 +25oC - 40 ns VDD = 15V, VIN = VDD OR GND 1, 2, 3 +25oC - 30 ns VDD = 10V, VIN = VDD OR GND 1, 2, 3 +25oC - 80 ns VDD = 15V, VIN = VDD OR GND 1, 2, 3 +25oC - 60 ns 1, 2 +25oC - 22.5 pF Any Input NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage SYMBOL IDD VNTH CONDITIONS NOTES TEMPERATURE VDD = 20V, VIN = VDD or GND 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC MIN MAX UNITS - 7.5 µA -2.8 -0.2 V - ±1 V N Threshold Voltage Delta ∆VTND P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V P Threshold Voltage Delta ∆VTPD VSS = 0V, IDD = 10µA 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns Functional F VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A CONFORMANCE GROUP 4 READ AND RECORD CD4049UBMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD CONFORMANCE GROUP Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas READ AND RECORD IDD, IOL5, IOH5A 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas IDD, IOL5, IOH5A 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 Group A Group B GROUP A SUBGROUPS Group D Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND Static Burn-In 1 (Note 1) 2, 4, 6, 10, 12, 13, 15 3, 5, 7-9, 11-14 1, 16 Static Burn-In 2 (Note 1) 2, 4, 6, 10, 12, 13, 15 8 1, 3, 5, 7, 9, 11, 14, 16 13 8 1, 16 2, 4, 6, 10, 12, 13, 15, 16 8 1, 3, 5, 7, 9, 11, 14 Dynamic Burn-In (Note 3) Irradiation (Note 2) 9V ± -0.5V 50kHz 2, 4, 6, 10, 12, 15 3, 5, 7, 9, 11, 14 VDD 25kHz NOTE: 1. Each pin except pin 1, pin 16, and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except pin 1, pin 16, and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 3. Each pin except pin 1, pin 16, and GND will have a series resistor of 4.75K ± 5%, VDD = 18V ± 0.5V Typical Performance Characteristics OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT VOLTAGE (VO) (V) AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VCC) = 5V 5 4 MINIMUM MAXIMUM 3 2 AMBIENT TEMPERATURE (TA) = +25oC 70 15V 10V 60 50 40 30 GATE-TO-SOURCE VOLTAGE (VGS) = 5V 20 10 1 0 1 2 3 INPUT VOLTAGE (VI) (V) 4 FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS 5 0 1 2 3 4 5 6 7 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 8 CD4049UBMS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) AMBIENT TEMPERATURE (TA) = +25oC -8 -7 -6 -5 -4 -3 -2 -1 0 70 15V AMBIENT TEMPERATURE (TA) = +25oC 10V 60 -5 50 -10 GATE-TO-SOURCE VOLTAGE (VGS) = 5V 40 -15 30 -20 -25 20 GATE-TO-SOURCE VOLTAGE (VGS) = 5V -10V -30 10 1 0 2 3 4 5 6 7 -35 8 -15V OUTPUT HIGH (SINK) CURRENT (IOH) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics (Continued) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT DRAIN CHARACTERISTICS 10 0 -5 GATE-TO-SOURCE VOLTAGE (VGS) = 5V -10 -10V -15 -15V -20 -25 -30 -35 SUPPLY VOLTAGE (VCC) = 10V 9 OUTPUT VOLTAGE (VO) (V) AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SINK) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -7 -6 -5 -4 -3 -2 -1 -8 FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) +125oC 8 = -55oC 7 6 VCC = 5V -55oC 5 4 +125oC 3 2 1 0 1 2 3 4 5 6 7 8 9 10 INPUT VOLTAGE (VI) (V) FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 6 CD4049UBMS 105 AMBIENT TEMPERATURE (TA) 8 = +25oC 6 4 2 SUPPLY VOLTAGE 104 (VDD) = 15V 8 6 4 10V 2 3 10 8 10V 6 4 5V 2 102 8 6 LOAD CAPACITANCE (CL) = 50pF 4 (11pF FIXTURE + 39pF EXT) 2 CL = 15pF (11pF FIXTURE + 4pF EXT 10 2 4 68 2 4 6 8 2 4 68 2 4 68 10 102 103 104 105 INPUT FREQUENCY (f) (kHz) FIGURE 8. TYPICAL POWER DISSIPATION vs FREQUENCY CHARACTERISTICS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches 7 POWER DISSIPATION PER INVERTER (PD) (µW) POWER DISSIPATION PER INVERTER (µW) Typical Performance Characteristics (Continued) 106 AMBIENT TEMPERATURE (TA) = +25oC 105 15V; 1MHz 104 15V; 100KHz 10V; 100KHz 103 15V; 10KHz 102 10 1 10 10V; 10KHz 15V; 1KHz SUPPLY VOLTAGE (VCC) = 5V FREQUENCY (f) = 10KHz 103 104 105 106 107 102 INPUT RISE AND FALL TIME (tr, tf) (ns) 108 FIGURE 9. TYPICAL POWER DISSIPATION vs INPUT RISE AND FALL TIMES PER INVERTER