CD4093BMS CMOS Quad 2-Input NAND Schmitt Triggers December 1992 Features Pinout • High Voltage Types (20V Rating) CD4093BMSMS TOP VIEW • Schmitt Trigger Action on Each Input With No External Components A 1 14 VDD B 2 13 H J=A·B 3 12 G K=C·D 4 11 M = G · H • Hysteresis Voltage Typically 0.9V at VDD = 5V and 2.3V at VDD = 10V • Noise Immunity Greater than 50% • No Limit on Input Rise and Fall Times C 5 10 L = E · F D 6 9 F VSS 7 8 E • Standardized, Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range, 100nA at 18V and +25oC • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Functional Diagram Applications A 1 B 2 J 3 J=A·B 14 VDD 13 H 12 G 11 M • Wave and Pulse Shapers • High Noise Environment Systems • Monostable Multivibrators K=C·D • Astable Multivibrators K • NAND Logic 4 L=E·F Description CD4093BMS consists of four Schmitt trigger circuits. Each circuit functions as a two input NAND gate with Schmitt trigger action on both inputs. The gate switches at different points for positive and negative going signals. The difference between the positive voltage (VP) and the negative voltage (VN) is defined as hysteresis voltage (VH) (see Figure 1). C 5 10 L D 6 9 F VSS 7 8 E M=G·H The CD4093BMS is supplied in these 14 lead outline packages: Braze Seal DIP H4H Frit Seal DIP H1B Ceramic Flatpack H3W CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-1074 File Number 3330 Specifications CD4093BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current Input Leakage Current Input Leakage Current SYMBOL IDD IIL IIH CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125 C - 200 µA VDD = 18V, VIN = VDD or GND 3 -55oC - 2 µA VIN = VDD or GND 1 +25oC -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV VIN = VDD or GND VDD = 20 VDD = 18V o Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 5) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC 1, 2, 3 +25oC, +125oC, -55oC 2.2 3.6 -55oC Functional Positive Trigger Threshold Voltage F VP5V VDD = 5V (Note 2) V V VP15V VDD = 15V (Note 3) 1, 2, 3 +25oC, 6.8 10.8 V Positive Trigger Threshold Voltage VP5V VDD = 5V (Note 4) 1, 2, 3 +25oC, +125oC, -55oC 2.6 4.0 V Negative Trigger Threshold Voltage VN5V VDD = 5V (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 0.9 2.8 V VN15V VDD = 15V (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 4.0 7.4 V Negative Trigger Threshold Voltage VN5V VDD = 5V (Note 4) 1, 2, 3 +25oC, +125oC, -55oC 1.4 3.2 V Hysteresis Voltage VH5V VDD = 5V (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 0.3 1.6 V VH15V VDD = 15V (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 1.6 5.0 V VH5V VDD = 5V (Note 4) 1, 2, 3 +25oC, +125oC, -55oC 0.3 1.6 V Hysteresis Voltage +125oC, VOH > VOL < VDD/2 VDD/2 NOTES: 1. All voltages referenced to device GND, 100% testing being im- 4. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13 plemented. 5. For accuracy, voltage is measured differentially to VDD. Limit 2. Inputs on terminals 1, 5, 8, 12 is 0.050V max. 3. Input on Terminal 1 7-1075 Specifications CD4093BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Transition Time SYMBOL TPHL TPLH CONDITIONS (NOTES 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 380 ns - 513 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 1 µA - 30 µA o +125 C VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND 1, 2 1, 2 -55 C, +25 C - 2 µA +125oC - 60 µA - 2 µA o -55oC, o +25oC - 120 µA Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA +125oC 0.9 - mA -55oC 1.6 - mA oC +125 Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Propagation Delay Transition Time IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 TPHL TPLH TTHL TTLH VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V 1, 2 1, 2 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V 1, 2 +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA -55oC - -1.6 mA +125oC - -2.4 mA -55oC - -4.2 mA 1, 2, 3 +25oC - 180 ns VDD = 15V 1, 2, 3 +25oC - 130 ns VDD = 10V 1, 2, 3 +25oC - 100 ns 1, 2, 3 +25oC - 80 ns VDD =15V, VOUT = 13.5V VDD = 10V VDD = 15V 7-1076 1, 2 Specifications CD4093BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Positive Trigger Threshold Voltage Negative Trigger Threshold Voltage Hysteresis Voltage Input Capacitance SYMBOL VP10V CONDITIONS VDD = 10V NOTES TEMPERATURE MIN MAX UNITS 1, 2, 4 +25oC, +125oC, 4.6 7.1 V -55oC VP10V VDD = 10V 1, 2, 5 +25oC, +125oC, -55oC 5.6 8.2 V VP15V VDD = 15V 1, 2, 5 +25oC, +125oC, -55oC 6.3 12.7 V VN10V VDD = 10V 1, 2, 4 +25oC, +125oC, -55oC 2.5 5.2 V VN10V VDD = 10V 1, 2, 5 +25oC, +125oC, -55oC 3.4 6.6 V VN15V VDD = 15V 1, 2, 5 +25oC, +125oC, -55oC 4.8 9.6 V VH10V VDD = 10V 1, 2, 4 +25oC, +125oC, -55oC 1.2 3.4 V VH10V VDD = 10V 1, 2, 5 +25oC, +125oC, -55oC 1.2 3.4 V VH15V VDD = 15V 1, 2, 5 +25oC, +125oC, -55oC 1.6 5.0 V 1, 2 +25oC - 7.5 pF CIN Any Input NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Input on terminals 1, 5, 8, 12 5. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13 TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta ∆VTP Functional F CONDITIONS NOTES TEMPERATURE TPHL TPLH MAX UNITS 1, 4 +25 - 7.5 µA VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time MIN VDD = 20V, VIN = VDD or GND oC VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record 7-1077 Specifications CD4093BMS TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test 1, 7, 9 100% 5004 1, 7, 9, Deltas IDD, IOL5, IOH5A 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 Group A Group B 100% 5004 Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 Note 1 3, 4, 10, 11 1, 2, 5-9, 12, 13 14 Static Burn-In 2 Note 1 3, 4, 10, 11 7 1, 2, 5, 6, 8, 9, 12-14 Dynamic BurnIn Note 1 - 7 14 3, 4, 10, 11 7 1, 2, 5, 6, 8, 9, 12-14 Irradiation Note 2 9V ± -0.5V 50kHz 25kHz 3, 4, 10, 11 1, 2, 5, 6, 8, 9, 12, 13 - NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V Logic Diagram VDD 1 (5, 8, 12) 2 (6, 9, 13) * * 3 (4, 10, 11) * All inputs protected by CMOS protection network 1 OF 4 SCHMITT TRIGGERS 7-1078 VSS CD4093BMS VP VN VDD VH VI VDD VH VO VSS VH = VP - VN VDD VO VN VO VI VI VP VSS (b) TRANSFER CHARACTERISTIC OF 1 OF 4 GATES (a) DEFINITION OF VP, VN, VH (c) TEST SETUP FIGURE 1. HYSTERESIS DEFINITION, CHARACTERISTIC, AND TEST SETUP OUTPUT CHARACTERISTIC INPUT CHARACTERISTIC VDD VOH LOGIC “1” INPUT REGION LOGIC “1” OUTPUT REGION VDD VOL VP VOH VN LOGIC “0” OUTPUT REGION LOGIC “0” INPUT REGION VOL DRIVER LOAD VSS FIGURE 2. INPUT AND OUTPUT CHARACTERISTICS Typical Performance Curves AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V SUPPLY VOLTAGE (VDD) = 15V 15 1.0 12.5 VDD 5 10V 10.0 VI CURRENT 7.5 PEAK 4 6 VO ID ID 5V 5.0 VO 1.0 ALL OTHER INPUTS TO VDD 0.5 OUTPUT VOLTAGE (VO) (V) VDD CURRENT PEAK DRAIN CURRENT (ID) (mA) OUTPUT VOLTAGE (VO) (V) 15.0 VDD VDD 10V 10 5 VI 4 6 ALL OTHER PACKAGE INPUTS TO VDD -55oC +125oC 5V 5 VO 2.5 0 0 2.5 5.0 7.5 10.0 12.5 15.0 0 0 FIGURE 3. TYPICAL CURRENT AND VOLTAGE TRANSFER CHARACTERISTICS 0 5 10 15 INPUT VOLTAGE (VI) (V) INPUT VOLTAGE (VI) (V) FIGURE 4. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE 7-1079 CD4093BMS (Continued) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 AMBIENT TEMPERATURE (TA) = +25oC 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 5V 0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 0 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS -5 -10 -15 -10V -20 -25 -15V DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 -30 -5 -10V TRANSITION TIME (tTHL, tTLH) (ns) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 600 500 400 300 200 100 5 10 15 SUPPLY VOLTAGE (VDD) -15 FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS LOAD CAPACITANCE (CL) = 50pF 0 -10 -15V AMBIENT TEMPERATURE (TA) = +25oC 0 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 700 0 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 30 OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Curves 200 150 100 10V FIGURE 9. TYPICAL PROPAGATION DELAY TIME vs. SUPPLY VOLTAGE 15V 50 0 0 20 SUPPLY VOLTAGE (VDD) = 5V 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 10. TYPICAL TRANSITION TIME vs. LOAD CAPACITANCE 7-1080 CD4093BMS (Continued) AMBIENT TEMPERATURE (TA) = +25oC INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13; OTHER INPUTS TIED TO VDD AMBIENT TEMPERATURE (TA) = +25oC VH x 100) (%) VDD 15 VP 10 HYSTERESIS ( TRIGGER THRESHOLD VOLTAGE (VP, VN) (V) Typical Performance Curves VN 5 0 0 5 10V, 15pF 10V, 50pF 1038 6 4 2 2 10 8 6 4 2 5V, 50pF 10 8 6 4 2 0 10 10-1 2 4 68 100 2 4 68 101 2 4 68 102 2 5 0 5 10 15 SUPPLY VOLTAGE (VDD) (V) 20 6 4 SUPPLY VOLTAGE (VDD) = 15V, CL = 50pF 2 10 104 POWER DISSIPATION (PD) (µW) POWER DISSIPATION (PD) (µW) 2 104 8 6 4 15 FIGURE 12. TYPICAL PERCENT HYSTERESIS vs. SUPPLY VOLTAGE AMBIENT TEMPERATURE (TA) = +25oC 6 4 20 0 10 15 20 SUPPLY VOLTAGE (VDD) (V) FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE vs. VDD 105 25 4 68 103 2 2 103 8 6 4 2 1028 104 FIGURE 13. TYPICAL POWER DISSIPATION vs. FREQUENCY CHARACTERISTICS 15V, 1kHz 10 8 6 4 2 10V, 1kHz 18 10 FREQUENCY (f) (kHz) 15V, 10kHz 6 4 2 6 4 2 -1 10 4 68 SUPPLY VOLTAGE (VDD) = 15V, FREQUENCY (f) = 100kHz 5V, 1kHz 2 4 68 AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 15pF 2 4 68 2 4 68 2 4 68 2 102 103 104 105 RISE AND FALL TIME (tR, tF) (ns) 4 68 106 FIGURE 14. TYPICAL POWER DISSIPATION vs. RISE AND FALL TIMES Applications VDD TO CONTROL SIGNAL OR VDD R 1 TO CONTROL SIGNAL OR VDD VDD 1/3 CD4007A VSS 1 2 2 3 tM VDD VDD 3 C 1/4 CD4093BMS VSS VDD VSS VSS VSS 1/4 CD4093BMS FREQUENCY RANGE OF WAVE SHAPE IS FROM DC TO 1MHz VDD VDD-VP 50kΩ ≤ R ≤ 1MΩ 100pF ≤ C ≤ 1µF tM = RC n FOR THE RANGE OF R AND C GIVEN 5µs < tM < 1s FIGURE 15. WAVE SHAPER FIGURE 16. MONOSTABLE MULTIVIBRATOR 7-1081 CD4093BMS Applications (Continued) tA TO CONTROL SIGNAL OR VDD 1/4 CD4093BMS 1 3 2 VDD VSS tA = RC n R VP VN VDD-VN VDD-VP 50kΩ ≤ R ≤ 1MΩ 100pF ≤ C ≤ 1µF C FOR THE RANGE OF R AND C GIVEN 2µs < tA < 0.4s VSS FIGURE 17. ASTABLE MULTIVIBRATOR Chip Dimensions and Pad Layout Dimension in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. 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