SUP90N08-4m8P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested RoHS COMPLIANT • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Half-Bridge - Secondary Synchronous Rectification TO-220AB • Industrial D G G D S Top View S Ordering Information: SUP90N08-4m8P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C IDM Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range ID L = 0.1 mH TC = 25 °C TA = 25 °Cc V 90d 90d 240 IAS 70 EAS 245 PD Unit 300b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 0.5 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74281 S11-0606-Rev. D, 04-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N08-4m8P Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 250 VDS = 75 V, VGS = 0 V 1 IDSS VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 ID(on) VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea a Forward Transconductance 4 RDS(on) gfs 70 V nA µA A 0.004 0.0048 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0096 VGS = 8 V, ID = 20 A, TJ = 150 °C 0.0106 VGS = 8 V, ID = 20 A 0.0046 VDS = 15 V, ID = 20 A 58 0.006 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time c Rise Timec Turn-Off Delay Time Fall Timec VGS = 0 V, VDS = 40 V, f = 1 MHz td(off) pF 571 275 105 160 VDS = 30 V, VGS = 10 V, ID = 85 A 32 f = 1 MHz 1.3 2.6 23 35 17 26 34 52 8 15 nC 28 td(on) tr c 6460 VDD = 30 V, RL = 0.4 ID 85 A, VGEN = 10 V, Rg = 1 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V 0.85 1.5 V 68 100 ns IF = 75 A, dI/dt = 100 A/µs 2.6 4 A 88 132 nC trr IRM(REC) Qrr A Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74281 S11-0606-Rev. D, 04-Apr- This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 120 VGS = 10 thru 6 V 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 5V 80 60 40 20 20 0 0 TC = 125 °C 25 °C - 55 °C 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.015 gfs - Transconductance (S) 120 25 °C 90 125 °C 60 30 R DS(on) - On-Resistance ( ) TC = - 55 °C 0 0.012 0.009 VGS = 8 V 0.006 0.003 VGS = 10 V 0.000 0 10 20 30 40 50 60 0 20 VGS - Gate-to-Source Voltage (V) 40 Transconductance 80 100 On-Resistance vs. Drain Current 8200 0.020 ID = 20 A Ciss 6560 0.016 C - Capacitance (pF) R DS(on) - On-Resistance ( ) 60 ID - Drain Current (A) 0.012 125 °C 0.008 3280 1640 25 °C 0.004 4920 Coss 0.000 4.0 Crss 0 5.2 6.4 7.6 8.8 10.0 0 15 30 45 60 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-resistance vs. Gate-to-Source Voltage Capacitance Document Number: 74281 S11-0606-Rev. D, 04-Apr-11 75 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 10 ID = 20 A VDS = 30 V 8 1.7 6 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) ID = 85 A VDS = 60 V 4 10 V 1.4 1.1 0.8 2 0.5 - 50 0 0 23 46 69 92 115 - 25 Gate Charge 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 100 0.7 150 °C 10 0.2 V GS(th) Variance (V) I S - Source Current (A) 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) 1.0 25 °C 0.1 0.01 ID = 5 mA - 0.3 - 0.8 - 1.3 ID = 250 µA - 1.8 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 - 2.3 - 50 1.2 VSD - Source-to-Drain Voltage (V) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 100 100 ID = 1 mA 90 IDAV (A) V DS (normalized) 95 150 °C 25 °C 10 85 80 75 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 1 0.00001 0.0001 0.001 0.01 0.1 1.0 TAV (sec) Single Pulse Avalanche Current Capability vs. Time Document Number: 74281 S11-0606-Rev. D, 04-Apr- This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 180 Limited by R DS(on)* 100 µs 100 108 I D - Drain Current (A) I D - Drain Current (A) 144 Package Limited 72 1 ms 10 10 ms 100 ms DC 1 36 TC = 25 °C Single Pulse 0.1 0 0 25 50 75 100 125 150 0.1 TC - Case Temperature (°C) 1 * VGS Maximum Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/ tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74281. Document Number: 74281 S11-0606-Rev. D, 04-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000