VISHAY SUP90N08-6M8P

SUP90N08-6m8P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
75
0.0068 at VGS = 10 V
90d
75
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
TO-220AB
D
G
G D S
S
Top View
N-Channel MOSFET
Ordering Information: SUP90N08-6m8P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
75
Gate-Source Voltage
VGS
± 22
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25
Operating Junction and Storage Temperature Range
°Cc
Unit
V
90d
90d
240
IAS
50
EAS
125
A
mJ
b
PD
272
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.55
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69538
S09-2435-Rev. C, 16-Nov-09
www.vishay.com
1
SUP90N08-6m8P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
75
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
4.5
± 250
VDS = 75 V, VGS = 0 V
1
VDS = 75 V, VGS = 0 V, TJ = 125 °C
50
VDS = 75 V, VGS = 0 V, TJ = 150 °C
250
VDS ≥ 10 V, VGS = 10 V
ID(on)
RDS(on)
70
nA
µA
A
VGS = 10 V, ID = 20 A
0.0056
0.0068
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.009
0.011
VDS = 15 V, ID = 20 A
50
gfs
V
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
247
Total Gate Chargec
Qg
75
Gate-Source
Chargec
Gate-Drain Chargec
VDS = 30 V, VGS = 10 V, ID = 50 A
td(on)
c
td(off)
tr
Fall Timec
pF
517
115
nC
25.5
20
Rg
c
Rise Timec
Turn-Off Delay Time
VGS = 0 V, VDS = 30 V, f = 1 MHz
Qgd
Gate Resistance
Turn-On Delay Time
Qgs
4620
f = 1 MHz
VDD = 30 V, RL = 0.6 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25
1.2
2.4
16
30
11
20
24
40
10
20
IS
85
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 20 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
°Cb
Pulsed Current
Continuous Current
Ω
IF = 75 A, dI/dt = 100 A/µs
A
0.83
1.5
V
60
100
ns
3.3
4.5
A
100
150
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69538
S09-2435-Rev. C, 16-Nov-09
SUP90N08-6m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
120
VGS = 10 V thru 7 V
100
80
ID - Drain Current (A)
I D - Drain Current (A)
100
6V
60
40
80
60
40
TC = 125 °C
20
20
5V
25 °C
- 55 °C
0
0
0
1
2
3
4
0
5
2
4
6
8
10
80
100
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transconductance
100
0.0060
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
80
25 °C
60
125 °C
40
20
0
0.0058
VGS = 10 V
0.0056
0.0054
0.0052
0.0050
0
12
24
36
48
60
0
20
40
60
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Transfer Characteristics
0.05
6000
Ciss
4800
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
ID = 20 A
0.04
0.03
0.02
150 °C
0.01
3600
2400
1200
Coss
25 °C
Crss
0.00
0
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 69538
S09-2435-Rev. C, 16-Nov-09
10
0
15
30
45
60
75
VDS - Drain-to-Source Voltage (V)
Capacitance
www.vishay.com
3
SUP90N08-6m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
10
ID = 20 A
1.7
8
VDS = 30 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 50 A
VDS = 60 V
6
4
VGS = 10 V
1.4
1.1
0.8
2
0.5
- 50
0
0
17
34
51
68
85
- 25
0
Qg - Total Gate Charge (nC)
75
100
125
150
175
150
175
0.8
100
150 °C
0.2
V GS(th) Variance (V)
10
I S - Source Current (A)
50
Threshold Voltage
On-Resistance vs. Junction Temperature
1.0
25 °C
0.1
ID = 5 mA
- 0.4
- 1.0
ID = 250 µA
- 1.6
0.01
0.001
0.0
25
TJ - Junction Temperature (°C)
0.2
0.4
0.6
0.8
1.0
- 2.2
- 50
1.2
- 25
VSD - Source-to-Drain Voltage (V)
0
25
50
75
100
125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
100
94
ID = 1 mA
86
IDAV (A)
VDS (normalized)
90
150 °C
25 °C
10
82
78
74
- 50
1
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
www.vishay.com
4
175
0.00001
0.0001
0.001
0.01
0.1
1.0
TAV (s)
Single Pulse Avalanche Current Capability vs.
Temperature
Document Number: 69538
S09-2435-Rev. C, 16-Nov-09
SUP90N08-6m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
155
Limited by R DS(on)*
124
I D - Drain Current (A)
I D - Drain Current (A)
100
93
Package Limited
62
100 µs
10
1 ms
10 ms
100 ms
DC
1
31
TC = 25 °C
Single Pulse
0
0
25
50
75
100
125
150
0.1
0.1
175
TC - Case Temperature (°C)
1
* VGS
Single Pulse Avalanche Current Capability vs. Time
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69538.
Document Number: 69538
S09-2435-Rev. C, 16-Nov-09
www.vishay.com
5
Package Information
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
*M
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
0.055
F
1.14
1.40
0.045
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
0.552
L
13.35
14.02
0.526
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
L
INCHES
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Document Number: 71195
Revison: 01-Nov-10
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1