SUP90N08-6m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial TO-220AB D G G D S S Top View N-Channel MOSFET Ordering Information: SUP90N08-6m8P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 22 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 90d 90d 240 IAS 50 EAS 125 A mJ b PD 272 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.55 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69538 S09-2435-Rev. C, 16-Nov-09 www.vishay.com 1 SUP90N08-6m8P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 VDS ≥ 10 V, VGS = 10 V ID(on) RDS(on) 70 nA µA A VGS = 10 V, ID = 20 A 0.0056 0.0068 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.009 0.011 VDS = 15 V, ID = 20 A 50 gfs V Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 247 Total Gate Chargec Qg 75 Gate-Source Chargec Gate-Drain Chargec VDS = 30 V, VGS = 10 V, ID = 50 A td(on) c td(off) tr Fall Timec pF 517 115 nC 25.5 20 Rg c Rise Timec Turn-Off Delay Time VGS = 0 V, VDS = 30 V, f = 1 MHz Qgd Gate Resistance Turn-On Delay Time Qgs 4620 f = 1 MHz VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 1.2 2.4 16 30 11 20 24 40 10 20 IS 85 ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 20 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb Pulsed Current Continuous Current Ω IF = 75 A, dI/dt = 100 A/µs A 0.83 1.5 V 60 100 ns 3.3 4.5 A 100 150 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69538 S09-2435-Rev. C, 16-Nov-09 SUP90N08-6m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 VGS = 10 V thru 7 V 100 80 ID - Drain Current (A) I D - Drain Current (A) 100 6V 60 40 80 60 40 TC = 125 °C 20 20 5V 25 °C - 55 °C 0 0 0 1 2 3 4 0 5 2 4 6 8 10 80 100 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transconductance 100 0.0060 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 80 25 °C 60 125 °C 40 20 0 0.0058 VGS = 10 V 0.0056 0.0054 0.0052 0.0050 0 12 24 36 48 60 0 20 40 60 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Transfer Characteristics 0.05 6000 Ciss 4800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) ID = 20 A 0.04 0.03 0.02 150 °C 0.01 3600 2400 1200 Coss 25 °C Crss 0.00 0 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 69538 S09-2435-Rev. C, 16-Nov-09 10 0 15 30 45 60 75 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUP90N08-6m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 ID = 20 A 1.7 8 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 50 A VDS = 60 V 6 4 VGS = 10 V 1.4 1.1 0.8 2 0.5 - 50 0 0 17 34 51 68 85 - 25 0 Qg - Total Gate Charge (nC) 75 100 125 150 175 150 175 0.8 100 150 °C 0.2 V GS(th) Variance (V) 10 I S - Source Current (A) 50 Threshold Voltage On-Resistance vs. Junction Temperature 1.0 25 °C 0.1 ID = 5 mA - 0.4 - 1.0 ID = 250 µA - 1.6 0.01 0.001 0.0 25 TJ - Junction Temperature (°C) 0.2 0.4 0.6 0.8 1.0 - 2.2 - 50 1.2 - 25 VSD - Source-to-Drain Voltage (V) 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 100 94 ID = 1 mA 86 IDAV (A) VDS (normalized) 90 150 °C 25 °C 10 82 78 74 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage www.vishay.com 4 175 0.00001 0.0001 0.001 0.01 0.1 1.0 TAV (s) Single Pulse Avalanche Current Capability vs. Temperature Document Number: 69538 S09-2435-Rev. C, 16-Nov-09 SUP90N08-6m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 155 Limited by R DS(on)* 124 I D - Drain Current (A) I D - Drain Current (A) 100 93 Package Limited 62 100 µs 10 1 ms 10 ms 100 ms DC 1 31 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 150 0.1 0.1 175 TC - Case Temperature (°C) 1 * VGS Single Pulse Avalanche Current Capability vs. Time 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69538. Document Number: 69538 S09-2435-Rev. C, 16-Nov-09 www.vishay.com 5 Package Information Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 *M DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 b(1) L INCHES Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) Document Number: 71195 Revison: 01-Nov-10 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1