SUP90N10-8m8P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET® Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT • Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial • Primary Switch D G D S G Top View Ordering Information: SUP90N10-8m8P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc V 90d 90d 240 IAS 60 EAS 180 PD Unit 300b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 0.5 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74644 S11-1147-Rev. B, 13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N10-8m8P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. VDS VDS = 0, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS 10 V, VGS = 10 V ID(on) RDS(on) 4.5 ± 250 70 nA µA A VGS = 10 V, ID = 20 A 0.00725 0.0088 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0137 0.0184 VDS = 15 V, ID = 20 A 62 gfs V S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge 97 VDS = 50 V, VGS = 10 V, ID = 85 A Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) 150 nC 32 25 Rg Turn-On Delay Timec pF 535 182 Qgd Gate Resistance Turn-Off Delay Time 6290 VGS = 0 V, VDS = 50 V, f = 1 MHz VDD = 50 V, RL = 0.588 ID 85 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics TC = 25 1.4 2.8 23 35 17 26 34 52 9 18 IS 85 Pulsed Current 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb ISM Continuous Current IF = 75 A, dI/dt = 100 A/µs A 0.85 1.5 V 61 100 ns 3.0 4.5 A 91 130 nC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74644 S11-1147-Rev. B, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N10-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 180 120 VGS = 10 thru 7 V 150 g fs - Transconductance (S) ID - Drain Current (A) 100 80 60 6V 40 TC = - 55 °C 120 TC = 25 °C 90 TC = 125 °C 60 30 20 5V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 0 5 12 100 0.05 80 0.04 60 TC = 125 °C TC = 25 °C 20 36 2 4 6 60 0.03 0.02 TA = 150 °C 0.01 TA = 25 °C TC = - 55 °C 0.00 4.0 0 0 48 Transconductance r DS(on) - On-Resistance (Ω) I D - Drain Current (A) Output Characteristics 40 24 I D - Drain Current (A) 8 10 5.2 6.4 7.6 8.8 10.0 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-resistance vs. Gate-to-Source Voltage 0.0076 8000 0.0074 6400 VGS = 10 V C - Capacitance (pF) r DS(on) - On-Resistance (Ω) Ciss 0.0072 0.0070 4800 3200 1600 0.0068 Coss 0.0066 Crss 0 0 20 40 60 ID - Drain Current (A) 80 On-Resistance vs. Drain Current Document Number: 74644 S11-1147-Rev. B, 13-Jun-11 100 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N10-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.7 ID = 20 A 0.2 2.0 VGS(th) Variance (V) r DS(on) - On-Resistance (Normalized) 2.5 VGS = 10 V 1.5 - 0.3 ID = 5 mA - 0.8 - 1.3 1.0 ID = 250 µA - 1.8 0.5 - 50 - 25 0 25 50 75 100 125 150 - 2.3 - 50 175 - 25 0 125 150 175 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 TJ - Junction Temperature (°C) 75 100 Threshold Voltage 10 130 ID = 85 A ID = 1 mA VDS = 50 V VDS = 30 V 8 124 V(BR)DSS (normalized) VGS - Gate-to-Source Voltage (V) 50 TJ - Temperature (°C) On-Resistance vs. Junction Temperature VDS = 70 V 6 4 2 118 112 106 0 0 22 44 66 88 100 - 50 110 - 25 Qg - Total Gate Charge (nC) Gate Charge Drain Source Breakdown vs. Junction Temperature 140 100 TJ = 150 °C 112 I D - Drain Current (A) 10 I S - Source Current (A) 25 TJ = 25 °C 1 0.1 0.01 Package Limited 84 56 28 0 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 1.2 0 25 50 75 100 TC - Case Temperature (°C) 125 150 Maximum Drain Current vs. Case Temperature Document Number: 74644 S11-1147-Rev. B, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N10-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1000 *Limited by r DS(on) TJ = 150 °C I D - Drain Current (A) I DAV (A) 100 TJ = 25 °C 10 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 1 10-5 10-4 10-3 10-2 t AV (sec) 10-1 1 0.1 0.1 *VGS Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74644. Document Number: 74644 S11-1147-Rev. B, 13-Jun-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000