SUP90N10-8m8P Datasheet

SUP90N10-8m8P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
Qg (Typ.)
100
0.0088 at VGS = 10 V
90d
97
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
RoHS
• 100 % Rg and UIS Tested
COMPLIANT
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
• Primary Switch
D
G D S
G
Top View
Ordering Information: SUP90N10-8m8P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
V
90d
90d
240
IAS
60
EAS
180
PD
Unit
300b
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
0.5
°C/W
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74644
S11-1147-Rev. B, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N10-8m8P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
VDS
VDS = 0, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
VDS = 100 V, VGS = 0 V, TJ = 150 °C
250
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
VDS 10 V, VGS = 10 V
ID(on)
RDS(on)
4.5
± 250
70
nA
µA
A
VGS = 10 V, ID = 20 A
0.00725
0.0088
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.0137
0.0184
VDS = 15 V, ID = 20 A
62
gfs
V

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
97
VDS = 50 V, VGS = 10 V, ID = 85 A
Rise Timec
Fall Timec
f = 1 MHz
td(on)
tr
c
td(off)
150
nC
32
25
Rg
Turn-On Delay Timec
pF
535
182
Qgd
Gate Resistance
Turn-Off Delay Time
6290
VGS = 0 V, VDS = 50 V, f = 1 MHz
VDD = 50 V, RL = 0.588 
ID  85 A, VGEN = 10 V, Rg = 1 
tf
Source-Drain Diode Ratings and Characteristics TC = 25
1.4
2.8
23
35
17
26
34
52
9
18
IS
85
Pulsed Current
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 30 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
°Cb
ISM
Continuous Current

IF = 75 A, dI/dt = 100 A/µs
A
0.85
1.5
V
61
100
ns
3.0
4.5
A
91
130
nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74644
S11-1147-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N10-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
180
120
VGS = 10 thru 7 V
150
g fs - Transconductance (S)
ID - Drain Current (A)
100
80
60
6V
40
TC = - 55 °C
120
TC = 25 °C
90
TC = 125 °C
60
30
20
5V
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
0
5
12
100
0.05
80
0.04
60
TC = 125 °C
TC = 25 °C
20
36
2
4
6
60
0.03
0.02
TA = 150 °C
0.01
TA = 25 °C
TC = - 55 °C
0.00
4.0
0
0
48
Transconductance
r DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
Output Characteristics
40
24
I D - Drain Current (A)
8
10
5.2
6.4
7.6
8.8
10.0
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-resistance vs. Gate-to-Source Voltage
0.0076
8000
0.0074
6400
VGS = 10 V
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
Ciss
0.0072
0.0070
4800
3200
1600
0.0068
Coss
0.0066
Crss
0
0
20
40
60
ID - Drain Current (A)
80
On-Resistance vs. Drain Current
Document Number: 74644
S11-1147-Rev. B, 13-Jun-11
100
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N10-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.7
ID = 20 A
0.2
2.0
VGS(th) Variance (V)
r DS(on) - On-Resistance (Normalized)
2.5
VGS = 10 V
1.5
- 0.3
ID = 5 mA
- 0.8
- 1.3
1.0
ID = 250 µA
- 1.8
0.5
- 50
- 25
0
25
50
75
100
125
150
- 2.3
- 50
175
- 25
0
125
150
175
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
TJ - Junction Temperature (°C)
75
100
Threshold Voltage
10
130
ID = 85 A
ID = 1 mA
VDS = 50 V
VDS = 30 V
8
124
V(BR)DSS (normalized)
VGS - Gate-to-Source Voltage (V)
50
TJ - Temperature (°C)
On-Resistance vs. Junction Temperature
VDS = 70 V
6
4
2
118
112
106
0
0
22
44
66
88
100
- 50
110
- 25
Qg - Total Gate Charge (nC)
Gate Charge
Drain Source Breakdown vs. Junction Temperature
140
100
TJ = 150 °C
112
I D - Drain Current (A)
10
I S - Source Current (A)
25
TJ = 25 °C
1
0.1
0.01
Package Limited
84
56
28
0
0.001
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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1.2
0
25
50
75
100
TC - Case Temperature (°C)
125
150
Maximum Drain Current vs. Case Temperature
Document Number: 74644
S11-1147-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N10-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
1000
*Limited by r DS(on)
TJ = 150 °C
I D - Drain Current (A)
I DAV (A)
100
TJ = 25 °C
10
100 µs
10
1 ms
10 ms
100 ms
DC
1
TC = 25 °C
Single Pulse
1
10-5
10-4
10-3
10-2
t AV (sec)
10-1
1
0.1
0.1
*VGS
Single Pulse Avalanche Current Capability vs. Time
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (sec)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74644.
Document Number: 74644
S11-1147-Rev. B, 13-Jun-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000