VEMI45AC-HNH Datasheet

VEMI45AC-HNH
www.vishay.com
Vishay Semiconductors
4-Channel EMI-Filter with ESD-Protection
FEATURES
• Ultra compact LLP1713-9L package
8
7
6
5
• Low package profile of 0.6 mm
9
• 4-channel EMI-filter
• Low leakage current
1
2
3
• Line resistance RS = 100 
4
• Typical cut off frequency f3dB = 240 MHz
20383
• ESD-protection acc. IEC 61000-4-2
± 10 kV contact discharge
± 12 kV air discharge
20522
MARKING (example only)
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
YXX



20719
Dot = pin 1 marking
Y = type code (see table below)
XX = date code
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VEMI45AC-HNH
VEMI45AC-HNH-GS08
3000
15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VEMI45AC-HNH
LLP1713-9L
C
3.7 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak pulse current
ESD immunity
Operating temperature
Storage temperature
Rev. 1.6, 03-Aug-12
TEST CONDITIONS
SYMBOL
VALUE
UNIT
All I/O pin to pin 9; acc. IEC 61000-4-5;
tp = 8/20 μs; single shot
IPPM
2
A
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
± 10
± 12
kV
TJ
- 40 to + 125
°C
TSTG
- 55 to + 150
°C
Document Number: 81673
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMI45AC-HNH
www.vishay.com
Vishay Semiconductors
APPLICATION NOTE
With the VEMI45AC-HNH 4 different signal or data lines can be filtered and clamped to ground. Due to the different clamping
levels in forward and reverse direction the clamping behaviour is Bidirectional and Asymmetric (BiAs).
L1IN
L2IN
L3IN
1
L1OUT
8
L2OUT
9
2
7
3
6
4
5
L3OUT
L4OUT
L4IN
20384
The 4 independent EMI-filter are placed between
pin 1 and pin 8,
pin 2 and pin 7,
pin 3 and pin 6 and
pin 4 and pin 5.
They all are connected to a common ground pin 9 on the backside of the package.

The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output to ground.
These Z-diodes are characterized by the breakthrough voltage level (VBR) and the diode capacitance (CD). Below the
breakthrough voltage level the Z-diodes can be considered as capacitors. Together with these capacitors and the line
resistance RS between input and output the device works as a low pass filter. Low frequency signals (f < f3dB) pass the filter
while high frequency signals (f > f3dB) will be shorted to ground through the diode capacitances CD.
RS
Out
(pin 5, 6, 7, 8)
In
(pin 1, 2, 3, 4)
CD
20385
CD
GND
(pin 9)
Each filter is symmetrical so that both ports can be used as input or output.
Rev. 1.6, 03-Aug-12
Document Number: 81673
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMI45AC-HNH
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS All inputs (pin 1, 2, 3, and 4) to ground (pin 9)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of channels which can be protected
Nchannel
-
-
4
channel
Max. reverse working voltage
VRWM
-
-
5
V
Reverse voltage
at IR = 1 μA
VR
5
-
-
V
Reverse current
at VR = VRWM
IR
-
< 0.1
1
μA
Reverse break down voltage
at IR = 1 mA
VBR
6
-
-
V
at IPP = 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5
VC-out
-
-
7
V
at IPP = IPPM = 2 A applied at the input,
measured at the output; acc. IEC 61000-4-5
VC-out
-
-
8
V
at IPP = - 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5
VC-out
-1
-
-
V
at IPP = IPPM = - 2 A applied at the input,
measured at the output; acc. IEC 61000-4-5
VC-out
- 1.2
-
-
V
at VR = 0 V; f = 1 MHz
CIN
-
20
-
pF
at VR = 2.5 V; f = 1 MHz
CIN
-
13
-
pF
at ± 10 kV ESD-pulse acc. IEC 61000-4-2
VCESD
-
7.5
-
V
Line resistance
Measured between input and output;
IS = 10 mA
RS
90
100
110

Cut-off frequency
VIN = 0 V; measured in a 50  system
f3dB
-
240
-
MHz
Protection paths
Reverse stand off voltage
Pos. clamping voltage
Neg. clamping voltage
Input capacitance
ESD-clamping voltage
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 %
Rise time = 0.7 ns to 1 ns
8 µs to 100 %
100 %
80 %
80 %
60 %
IPPM
Discharge Current IESD
100 %
60 %
53 %
40 %
27 %
20 %
20 %
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
20557
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Rev. 1.6, 03-Aug-12
20 µs to 50 %
40 %
0%
0
20548
10
20
30
40
Time (µs)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number: 81673
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMI45AC-HNH
www.vishay.com
Vishay Semiconductors
100
25
10
20
CIN (pF)
f = 1 MHz
IF (mA)
1
0.1
15
10
0.01
5
0.001
0.5
0
0.6
0.7
20660
0.8
0.9
1
1
2
7
-5
Transmission (S21) (dB)
0
5
4
3
2
1
5
6
Fig. 6 - Typical Input Capacitance CIN vs. Input Voltage VIN
8
6
4
3
VIN (V)
20663
VF (V)
Fig. 3 - Typical Forward Current IF vs. Forward Voltage VF
VR (V)
0
1.1
- 10
VINPUT = 5 V
- 15
VINPUT = 2 V
- 20
VINPUT = 1 V
- 25
VINPUT = 0 V
- 30
Measured in a 50 Ω system
- 35
0
0.01
0.1
1
10
100
IR (µA)
20661
10
1000 10 000
20664
Fig. 4 - Typical Reverse Voltage VR vs.
Reverse Current IR
100
1000
10 000
Frequency (MHz)
Fig. 7 - Typical Small Signal Transmission (S21)
at ZO = 50 
14
12
Input clamping voltage
VC (V)
10
8
Output clamping voltage
6
4
Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)
2
VC
0
0
20662
1
2
3
4
IPP (A)
Fig. 5 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Rev. 1.6, 03-Aug-12
Document Number: 81673
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMI45AC-HNH
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): LLP1713-9L
1.05 (0.041)
0.3 (0.012)
exp. DAP
0.35 (0.014)
0.45 (0.018)
0.2 (0.008) x 45°
0.24 (0.009)
0.23 (0.009)
0.17 (0.007)
0.4 (0.016) bsc
1.2 (0.047) ref.
1.4 (0.055)
0.5 (0.020)
0.6 (0.024)
1.75 (0.069)
1.65 (0.065)
0.152 (0.006) ref.
0 (0.000)
0.05 (0.002)
1.3 (0.051)
Pin 1 marking
Foot print recommendation:
3 x 0.4 = 1.2 (0.047)
20386
Rev. 1.6, 03-Aug-12
0.4 (0.016)
1 (0.039)
0.2 (0.008)
Solder
resist mask
0.42 (0.017)
Document no.:S8-V-3906.04-001 (4)
Created - Date: 28. August 2006
Rev. 1 - Date: 27. May 2008
0.4 (0.016)
0.15 (0.006)
0.4 (0.016)
Solder pad
Document Number: 81673
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000