2N877 2N881, 2N885 2N889.aspx?ext=

High-reliability discrete products
and engineering services since 1977
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Peak forward blocking voltage
Working and repetitive
peak reverse voltage
Non-repetitive peak reverse
voltage
VFXM
VROM(wkg) and VROM(rep)
VROM(non-rep) < 5 milliseconds
TJ = -65° to 150°C
TJ = -65° to 125°C
Part number
TJ = -65° to 125°C
RGK = 1000 ohms maximum
Units
2N877, 2N885
30
30
45
V
2N878, 2N886
60
60
90
V
2N879, 2N887
100
100
130
V
2N880, 2N888
150
150
200
V
2N881, 2N889
200
200
275
V
Symbol
Value
Unit
Peak forward voltage
Rating
VF(pk)
300
V
RMS on-state current
A
IT(RMS)
0.5
Peak one cycle surge (non-repetitive) on-state current
IFM
7.0
A
Peak forward gate power dissipation
PGM
0.1
W
Average forward gate power dissipation
PG(AV)
0.01
W
Peak gate voltage, forward and reverse
VGFM, VGRM
6.0
V
Tstg
-65 to 150
°C
TJ
-65 to 150
°C
Storage temperature
Operating temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
-
0.03
10
-
10
100
-
0.03
1
-
10
20
Units
Forward blocking current
2N877-2N881
Test Condition
VFX = rated VFXM, RGK = 1000ohms
IFX
2N885-2N889
TJ = 25°C
µAdc
TJ = 125°C
TJ = 25°C
TJ = 125°C
VRX = rated VROM(rep)
Reverse blocking current
2N877-2N881
IRX
2N885-2N889
Reverse gate current
IGRM
Peak on-state voltage
VFM
-
0.1
10
-
10
100
-
0.1
1
-
10
20
-
1
10
-
1.3
1.9
TJ = 25°C
µAdc
TJ = 125°C
TJ = 25°C
TJ = 125°C
µAdc
V
VGRM = 2V, TJ = 25°C
TJ = 25°C, IFX = 1A, single, half sinewave
pulse, 2.0ms wide max.
Rev. 20130123
High-reliability discrete products
and engineering services since 1977
Characteristic
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
Symbol
Min
Typ
Max
Units
2N877-2N881
Test Condition
TJ = 25°C, RGK = 1000ohms, VFX = 24V dc
Holding current
IH
2N885-2N889
0.4
1.7
5.0
0.4
1.1
3.0
mAdc
Critical rate of rise of applied forward voltage
dv/dt
-
40
-
V/µs
TJ = 125°C, RGK = 1000ohms, VFXM = rated
VFXM
Turn-on time
td + tr
-
1.0
-
µs
TJ = 25°C, VFX = rated VFXM, IFM = 1A, gate
supply: 6V, 300ohms
toff
-
15
-
µs
TJ = 125°C, RGK = 1000ohms, IFM = 1A,
IR(recovery) = 1A, reapplied VFXM = rated,
rate of rise of reapplied forward blocking
voltage = 20V/µs
(Delay time + rise time)
Circuit commutated turn-off time (all types)
VFX = 6Vdc, RGK = 1000ohms,
RL = 100 ohms max.
Gate trigger current
2N877-2N881
2N885-2N889
IGT
-
40
200
-
10
20
µAdc
2N877-2N881
All types
TJ = 25°C
VFX = 6Vdc, RGK = 1000ohms,
RL = 100ohms max.
Gate trigger voltage
2N885-2N889
TJ = 25°C
VGT
0.4
0.5
0.8
0.44
0.5
0.6
0.05
-
-
TJ = 25°C
Vdc
TJ = 25°C
VFX = rated VFXM, RGK = 1000ohms,
TJ = 125°C
Rev. 20130123
High-reliability discrete products
and engineering services since 1977
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
MECHANICAL CHARACTERISTICS
Case:
TO-18
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130123
High-reliability discrete products
and engineering services since 1977
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
Rev. 20130123
High-reliability discrete products
and engineering services since 1977
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
Rev. 20130123