High-reliability discrete products and engineering services since 1977 2N877-2N881, 2N885-2N889 SILICON CONTROLLED RECTFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Peak forward blocking voltage Working and repetitive peak reverse voltage Non-repetitive peak reverse voltage VFXM VROM(wkg) and VROM(rep) VROM(non-rep) < 5 milliseconds TJ = -65° to 150°C TJ = -65° to 125°C Part number TJ = -65° to 125°C RGK = 1000 ohms maximum Units 2N877, 2N885 30 30 45 V 2N878, 2N886 60 60 90 V 2N879, 2N887 100 100 130 V 2N880, 2N888 150 150 200 V 2N881, 2N889 200 200 275 V Symbol Value Unit Peak forward voltage Rating VF(pk) 300 V RMS on-state current A IT(RMS) 0.5 Peak one cycle surge (non-repetitive) on-state current IFM 7.0 A Peak forward gate power dissipation PGM 0.1 W Average forward gate power dissipation PG(AV) 0.01 W Peak gate voltage, forward and reverse VGFM, VGRM 6.0 V Tstg -65 to 150 °C TJ -65 to 150 °C Storage temperature Operating temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max - 0.03 10 - 10 100 - 0.03 1 - 10 20 Units Forward blocking current 2N877-2N881 Test Condition VFX = rated VFXM, RGK = 1000ohms IFX 2N885-2N889 TJ = 25°C µAdc TJ = 125°C TJ = 25°C TJ = 125°C VRX = rated VROM(rep) Reverse blocking current 2N877-2N881 IRX 2N885-2N889 Reverse gate current IGRM Peak on-state voltage VFM - 0.1 10 - 10 100 - 0.1 1 - 10 20 - 1 10 - 1.3 1.9 TJ = 25°C µAdc TJ = 125°C TJ = 25°C TJ = 125°C µAdc V VGRM = 2V, TJ = 25°C TJ = 25°C, IFX = 1A, single, half sinewave pulse, 2.0ms wide max. Rev. 20130123 High-reliability discrete products and engineering services since 1977 Characteristic 2N877-2N881, 2N885-2N889 SILICON CONTROLLED RECTFIERS Symbol Min Typ Max Units 2N877-2N881 Test Condition TJ = 25°C, RGK = 1000ohms, VFX = 24V dc Holding current IH 2N885-2N889 0.4 1.7 5.0 0.4 1.1 3.0 mAdc Critical rate of rise of applied forward voltage dv/dt - 40 - V/µs TJ = 125°C, RGK = 1000ohms, VFXM = rated VFXM Turn-on time td + tr - 1.0 - µs TJ = 25°C, VFX = rated VFXM, IFM = 1A, gate supply: 6V, 300ohms toff - 15 - µs TJ = 125°C, RGK = 1000ohms, IFM = 1A, IR(recovery) = 1A, reapplied VFXM = rated, rate of rise of reapplied forward blocking voltage = 20V/µs (Delay time + rise time) Circuit commutated turn-off time (all types) VFX = 6Vdc, RGK = 1000ohms, RL = 100 ohms max. Gate trigger current 2N877-2N881 2N885-2N889 IGT - 40 200 - 10 20 µAdc 2N877-2N881 All types TJ = 25°C VFX = 6Vdc, RGK = 1000ohms, RL = 100ohms max. Gate trigger voltage 2N885-2N889 TJ = 25°C VGT 0.4 0.5 0.8 0.44 0.5 0.6 0.05 - - TJ = 25°C Vdc TJ = 25°C VFX = rated VFXM, RGK = 1000ohms, TJ = 125°C Rev. 20130123 High-reliability discrete products and engineering services since 1977 2N877-2N881, 2N885-2N889 SILICON CONTROLLED RECTFIERS MECHANICAL CHARACTERISTICS Case: TO-18 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130123 High-reliability discrete products and engineering services since 1977 2N877-2N881, 2N885-2N889 SILICON CONTROLLED RECTFIERS Rev. 20130123 High-reliability discrete products and engineering services since 1977 2N877-2N881, 2N885-2N889 SILICON CONTROLLED RECTFIERS Rev. 20130123