BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6 BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6 Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2014-08-18 Nominal Current Nennstrom Ø 12.75 Ø 11±0.5 50 ... 600 V Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung 28.5 min Rändel 0.8 knurl 0.8 Repetitive peak reverse voltage Periodische Spitzensperrspannung 4.2+0.3 9.3±0.2 1.3 60 A Dimensions - Maße [mm] Weight approx. Gewicht ca. 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Anode Cathode BYP60A05 BYP60K05 50 60 BYP60A1 BYP60K1 100 120 BYP60A2 BYP60K2 200 240 BYP60A3 BYP60K3 300 360 BYP60A4 BYP60K4 400 480 BYP60A6 BYP60K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C IFAV 60 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 190 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 450/500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1000 A2s Tj TS -50...+215°C -50...+215°C Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6 Characteristics Kennwerte Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 60 A VF < 1.1 V Leakage Current – Sperrstrom Tj = 25°C VR = VRRM IR < 100 µA Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse RthC < 0.6 K/W Maximum pressing force Maximaler Einpressdruck Fpmax 4 kN 120 103 [%] [A] 100 Tj = 125°C 2 10 80 Tj = 25°C 10 60 40 1 20 IF IFAV 0 0 TC 50 100 150 200 [°C] 10-1 0.4 Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. 450a-(60a-1,1v) VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 3 10 [A] 102 îF 10 1 © Diotec Semiconductor AG 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz http://www.diotec.com/ 2