BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2014-08-18 Nominal Current Nennstrom Ø 12.75 Ø 11±0.5 50 ... 600 V Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung 28.5 min Rändel 0.8 knurl 0.8 Repetitive peak reverse voltage Periodische Spitzensperrspannung 4.2+0.3 9.3±0.2 1.3 35 A Dimensions - Maße [mm] Weight approx. Gewicht ca. 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Anode Cathode BYP35A05 BYP35K05 50 60 BYP35A1 BYP35K1 100 120 BYP35A2 BYP35K2 200 240 BYP35A3 BYP35K3 300 360 BYP35A4 BYP35K4 400 480 BYP35A6 BYP35K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C IFAV 35 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 130 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 360/400 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 660 A2s Tj TS -50...+215°C -50...+215°C Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 Characteristics Kennwerte Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 35 A VF < 1.1 V Leakage Current – Sperrstrom Tj = 25°C VR = VRRM IR < 100 µA Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse RthC < 0.8 K/W Maximum pressing force Maximaler Einpressdruck Fpmax 4 kN 120 3 10 [%] [A] 100 Tj = 125°C 102 80 Tj = 25°C 10 60 40 1 20 IF IFAV 0 10 360a-(35a-1,1v) -1 0 TC 50 100 150 200 [°C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 3 10 [A] 102 îF 10 1 © Diotec Semiconductor AG 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz http://www.diotec.com/ 2