SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0093 at VGS = 10 V 50 0.0122 at VGS = 4.5 V 50 VDS (V) 60 • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information: SUD50N06-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 50 ID 50a IDM Pulsed Drain Current a Continuous Source Current (Diode Conduction) IS 50 Avalanche Current IAS 50 EAS 125 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH TC = 25 °C Maximum Power Dissipation TA = 25 °C mJ 136 PD W 3b, 8.3b, c TJ, Tstg Operating Junction and Storage Temperature Range A 100 - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 10 sec Maximum Junction-to-Ambienta Steady State Typical Maximum 15 18 RthJA RthJC Maximum Junction-to-Case 40 50 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t 10 s. Document Number: 72004 S13-0298-Rev. F, 11-Feb-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50N06-09L Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Typ.a Max. 2 3 Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage ± 100 VDS = 60 V, VGS = 0 V, TJ = 175 °C On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V b Forward Transconductance Dynamic RDS(on) gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 0.0093 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0160 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.0200 VGS = 4.5 V, ID = 15 A 0.0122 VDS = 15 V, ID = 20 A 60 2650 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 470 225 47 VDS = 30 V, VGS = 10 V, ID = 50 A 70 nC 10 12 Turn-On Delay Timec td(on) 10 20 15 25 35 50 20 30 Rise Turn-Off Delay Timec Fall Timec td(off) S Qgd tr µA A 0.0074 Gate-Drain Chargec Timec nA 250 50 VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb V VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 2.5 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) A Pulsed Current ISM Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns 100 Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72004 S13-0298-Rev. F, 11-Feb-13 For technical questions, contact: [email protected] www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 100 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 80 60 40 60 40 TC = 125 °C 20 20 25 °C 2 V, 3 V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 5 0.015 TC = - 55 °C 0.012 VGS = 4.5 V 25 °C 80 0.009 VGS = 10 V 125 °C 60 R DS(on) - g fs - Transconductance (S) 100 40 20 0 0.006 0.003 0.000 0 10 20 30 I D - Drain Current (A) 40 0 50 40 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 4000 VGS - Gate-to-Source Voltage (V) 3500 3000 C - Capacitance (pF) 20 Ciss 2500 2000 1500 1000 Coss VDS = 30 V ID = 50 A 8 6 4 2 500 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72004 S13-0298-Rev. F, 11-Feb-13 60 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 20 A 2.0 I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72004 S13-0298-Rev. F, 11-Feb-13 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage For technical questions, contact: [email protected] www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50N06-09L Vishay Siliconix THERMAL RATINGS 1000 60 Limited by RDS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 µs 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0.1 10 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72004. Document Number: 72004 S13-0298-Rev. F, 11-Feb-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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