SUD50P04-09L Vishay Siliconix P-Channel 40 V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0094 at VGS = - 10 V - 50 0.0145 at VGS = - 4.5 V - 50 VDS (V) - 40 • TrenchFET® Power MOSFETs • 175 °C Junction Temperature • Compliant to RoHS Directive 2002/95/EC S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P04-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Avalanche Energya Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Unit V - 50d ID - 50d IDM - 100 IAS - 50 A 125 EAS mJ 136c PD W 3b, c TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.82 1.1 Unit °C/W Notes: a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 72243 S10-0546-Rev. C, 08-Mar-10 www.vishay.com 1 SUD50P04-09L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 32 V, VGS = 0 V -1 IDSS VDS = - 32 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 32 V, VGS = 0 V, TJ = 175 °C - 150 ID(on) VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 24 A Drain-Source On-State Resistancea Forward Transconductancea RDS(on) -3 - 50 nA µA A 0.0075 0.0094 VGS = - 10 V, ID = - 50 A, TJ = 125 °C 0.014 VGS = - 10 V, ID = - 50 A, TJ = 175 °C 0.017 gfs V VGS = - 4.5 V, ID = - 18 A 0.0115 VDS = - 5 V, ID = - 24 A 73 Ω 0.0145 S Dynamicb 4800 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 550 Total Gate Chargec Qg 102 Gate-Source Chargec Qgs VGS = 0 V, VDS = - 25 V, f = 1 MHz VDS = - 20 V, VGS = - 10 V, ID = - 50 A 700 pF 150 18.5 nC Gate-Drain Chargec Qgd 27 Turn-On Delay Timec td(on) 10 15 60 90 145 220 140 220 Rise Timec Turn-Off Delay Time tr c Fall Timec td(off) VDD = - 20 V, RL = 0.4 Ω ID ≅ - 50 A, VGEN = - 10 V, Rg = 6 Ω tf ns Source Drain-Diode Ratings and Characteristics TC = 25 °Cb IS - 50 Pulsed Current Continuous Current ISM - 100 Forward Voltagea VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V trr IF = - 50 A, dI/dt = 100 A/µs 55 85 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72243 S10-0546-Rev. C, 08-Mar-10 SUD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS = 10 V thru 5 V 4V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 60 40 TC = 125 °C 20 20 3V 2V 0 0 1 2 3 4 - 55 °C 25 °C 0 0.0 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 0.020 TC = - 55 °C 25 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 100 125 °C 80 60 40 0.016 VGS = 4.5 V 0.012 VGS = 10 V 0.008 0.004 20 0 0.000 0 20 40 60 80 100 0 20 40 VGS - Gate-to-Source Voltage (V) 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 8000 VGS - Gate-to-Source Voltage (V) 7000 6000 C - Capacitance (pF) 60 Ciss 5000 4000 3000 2000 Coss 1000 VDS = 20 V ID = 50 A 8 6 4 2 Crss 0 0 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72243 S10-0546-Rev. C, 08-Mar-10 120 www.vishay.com 3 SUD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1.8 VGS = 10 V ID = 50 A I S - Source Current (A) 1.4 (Normalized) R DS(on) - On-Resistance 1.6 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 1 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage THERMAL RATINGS 1000 60 50 IDM Limited I D - Drain Current (A) I D - Drain Current (A) Limited by RDS(on)* 40 30 20 100 P(t) = 0.0001 ID(on) Limited P(t) = 0.001 10 TC = 25 °C Single Pulse 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 175 P(t) = 0.01 BVDSS Limited 1 0.1 1 10 P(t) = 0.1 P(t) = 1 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72243. www.vishay.com 4 Document Number: 72243 S10-0546-Rev. C, 08-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1