SUD50N06-09L New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 VDS (V) rDS(on) (W) 60 ID D Automotive - ABS - Motor Drives - Fuel Injection D TO-252 G Drain Connected to Tab G D S Top View S Order Number: SUD50N06-09L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) _ b TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Symbol Limit Unit VGS "20 V 50 ID 50a IDM 100 IS 50a IAR 50 EAR 125 A mJ 100 PD W 3b, 8.3b, c TJ, Tstg _C -55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t p 10 sec. Maximum Junction-to-Ambient Maximum Junction-to-Case Steady State RthJA RthJC Typical Limit 15 18 40 50 1.2 1.5 Unit _C/W C/W Notes: a. Package limited. b. Surface mounted on 1” x 1” FR4 Board, t v 10 sec. c. t p 10 sec. Document Number: 72004 S-21714—Rev. A, 07-Oct-02 www.vishay.com 1 SUD50N06-09L New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C 50 On-State Drain Currentb ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V "100 VDS = 48 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs nA mA m 250 50 A 0.0074 0.0093 VGS = 10 V, ID = 20 A, TJ = 125_C 0.016 VGS = 10 V, ID = 20 A, TJ = 175_C 0.020 VGS = 4.5 V, ID = 15 A 0.0122 VDS = 15 V, ID = 20 A W S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 225 Total Gate Chargec Qg 47 Gate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 12 Turn-On Delay Timec td(on) 10 20 tr 15 25 35 50 20 30 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 2650 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 50 A VDD = 30 V, RL = 0.6 W ID^ 50 A, VGEN = 10 V, RG = 2.5 W tf 470 pF 70 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C) 100 Pulsed Current ISM Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1.0 1.5 V trr IF = 20 A, di/dt = 100 A/ms 45 100 ns Reverse Recovery Time A Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72004 S-21714—Rev. A, 07-Oct-02 SUD50N06-09L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 60 40 TC = 125_C 20 25_C 2 V, 3 V -55 _C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 120 0.015 TC = -55_C 0.012 r DS(on) - On-Resistance ( Ω ) g fs - Transconductance (S) 100 25_C 80 125_C 60 40 20 0 VGS = 4.5 V VGS = 10 V 0.009 0.006 0.003 0.000 0 10 20 30 40 50 0 20 40 ID - Drain Current (A) 80 100 40 50 ID - Drain Current (A) Capacitance Gate Charge 10 4000 3000 V GS - Gate-to-Source Voltage (V) 3500 C - Capacitance (pF) 60 Ciss 2500 2000 1500 1000 Coss 500 Crss 0 0 VDS = 30 V ID = 50 A 8 6 4 2 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Document Number: 72004 S-21714—Rev. A, 07-Oct-02 60 0 10 20 30 Qg - Total Gate Charge (nC) www.vishay.com 3 SUD50N06-09L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150_C I S - Source Current (A) r DS(on) - On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 20 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 60 Limited by rDS(on) 50 10 ms I D - Drain Current (A) I D - Drain Current (A) 100 40 30 20 100 ms 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 10 0 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72004 S-21714—Rev. A, 07-Oct-02