ISL74422ARH Features The Radiation Hardened ISL74422ARH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a CMOS level input signal into a high current output at voltages up to 18V. Its fast rise times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. • QML Qualified per MIL-PRF-38535 Requirements The input of the ISL74422ARH can be directly driven by our HS-1825ARH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging high gate capacitances. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-01521. A link is provided on our website for downloading. • Electrically Screened to DSCC SMD # 5962-01521 • Radiation Environment - Total Dose (Max) . . . . . . . . . . . . . . 300krad(SI) - Latch-Up Immune • IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . 9A(Min) • TF (CL = 10,000pF) . . . . . . . 70ns(Typ); 90ns(Max) • TR (CL = 10,000pF) . . . . . 90ns(Typ); 105ns(Max) • Prop Delay High-Low (CL = 10,000pF) . . . . . . . . . . . . . . . . . . . . 75ns(Max), 55ns(Typ) • Prop Delay Low-High (CL = 10,000pF) . . . . . . . . . . . . . . . . . . . . 50ns(Max), 30ns(Typ) • Consistent Delay Times with VCC Changes • Wide Supply Voltage Range . . . . . . . . . 7V to 18V • Low Stand-by Power Consumption - Input Low . . . . . . . . . . . . . . . . . . <2mW(Max) - Inputs High. . . . . . . . . . . . . . . . <18mW(Max) • ESD Protected . . . . . . . . . . . . . . . . . . . .>1750V Applications • Switching Power Supplies • DC/DC Converters • Motor Controllers Pin Configuration ISL74422ARH-F (FLATPACK CDFP4-F16) TOP VIEW April 1, 2010 FN9031.2 1 NC 1 16 VS NC 2 15 VS LVS 3 14 NC IN 4 13 OUT LGND 5 12 OUT NC 6 11 NC NC 7 10 NC GND 8 9 GND CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2007, 2010. All Rights Reserved All other trademarks mentioned are the property of their respective owners ISL74422ARH Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers ISL74422ARH Pin Descriptions PIN(s) SYMBOL DESCRIPTION 1, 2, 6, 7, 10, 11, 14 NC NO Connect. 3 LVS Provides the supply voltage for the control logic. It is not internally connected to Pins 15 and 16 for noise immunity purposes, but may be connected externally. 4 IN 5 LGND Control logic return. It is not internally connected to Pins 8 and 9 for noise immunity purposes, but may be connected externally. 8, 9 GND Pins must be connected to GND. 12, 13 OUT Pins must be connected to output. 15, 16 VS Input voltage to the driver. Pins must be connected to VS. Ordering Information PART NUMBER (Note) ORDERING NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE (RoHS COMPLIANT) 5962F0152101VXC ISL74422ARHVF Q5962F01 52101VXC -55 to +125 16 LD Flatpack 5962F0152101QXC ISL74422ARHQF Q5962F01 52101QXC -55 to +125 16 LD Flatpack 5962F0152101V9A ISL74422ARHVX -55 to +125 DIE ISL74422ARHF/PROTO ISL74422ARHF/PROTO -55 to +125 16 LD Flatpack ISL74422ARHY/SAMPLE ISL74422ARHY/SAMPLE -55 to +125 DIE SAMPLE ISL7 4422ARHF /PROTO NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2 FN9031.2 April 1, 2010 ISL74422ARH Die Characteristics Backside Finish: DIE DIMENSIONS: 3838µm x 4829µm (151.1 mils x 190.1mils) Thickness: 483µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Glassivation: Unbiased (DI) Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ± 1.0kÅ ADDITIONAL INFORMATION: Worst Case Current Density: Top Metallization: <2.0 x 105 A/cm2 Type: AlSiCu Thickness: 16.0kÅ ± 2kÅ Transistor Count: 30 Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Metallization Mask Layout ISL74422ARH IN LGND LVCC PGND PVCC OUT1 OUT2 For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 3 FN9031.2 April 1, 2010