Radiation Hardened High Frequency Half Bridge Drivers IS-2100ARH, IS-2100AEH Features The Radiation Hardened IS-2100ARH, IS-2100AEH are high frequency, 130V Half Bridge N-Channel MOSFET Driver ICs, which are functionally similar to industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead-time selection and driver protocol. • Electrically Screened to DLA SMD # 5962-99536 In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs). Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering. • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Maximum Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad(SI) - DI RSG Process Provides Latch-up Immunity - SEU Rating . . . . . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm2 - Vertical Device Architecture Reduces Sensitivity to Low Dose Rates • Bootstrap Supply Max Voltage to 150V • Drives 1000pF Load at 1MHz with Rise and Fall Times of 30ns (Typ) • 1.5A (Typ) Peak Output Current • Independent Inputs for Non-Half Bridge Topologies Detailed Electrical Specifications for the IS-2100ARH, IS-2100AEH are contained in SMD 5962-99536. A “hotlink” is also provided on our website for downloading. • Low DC Power Consumption. . . . . . . . . . . . . . . . . 60mW (Typ) Ordering Information Applications INTERSIL MKT. NUMBER ORDERING NUMBER TEMP. RANGE (°C) • Operates with VDD = VCC Over 12V to 20V Range • Low-side Supply Undervoltage Protection • High Frequency Switch-Mode Power Supplies • Drivers for Inductive Loads 5962F9953602V9A IS0-2100ARH-Q -55 to +125 • DC Motor Drivers 5962F9953602VXC IS9-2100ARH-Q -55 to +125 5962F9953602QXC IS9-2100ARH-8 -55 to +125 Pin Configuration IS9-2100ARH/Proto IS9-2100ARH/Proto -55 to +125 5962F9953603VXC IS9-2100AEH-Q -55 to +125 5962F9953603V9A IS0-2100AEH-Q -55 to +125 August 28, 2012 FN9037.2 1 IS-2100ARH, IS-2100AEH FLATPACK (CDFP4-F16) TOP VIEW LO 1 16 NC COM 2 15 VSS VCC 3 14 LIN NC 4 13 SD NC 5 12 HIN VS 6 11 VDD VB 7 10 NC HO 8 9 NC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2002, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. IS-2100ARH, IS-2100AEH Die Characteristics DIE DIMENSIONS: Backside Finish: 4820μm x 3300μm (190 mils x 130 mils) Thickness: 483μm ±25.4μm (19 mils ±1 mil) INTERFACE MATERIALS: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Glassivation: Unbiased (DI) Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ±1.0kÅ ADDITIONAL INFORMATION: Worst Case Current Density: Top Metallization: <2.0 x 105 A/cm2 Type: ALSiCu Thickness: 16.0kÅ ±2kÅ Transistor Count: 542 Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Metallization Mask Layout IS-2100ARH, IS-2100AEH SD (13) HIN (12) LIN (14) VSS (15) VDD (11) LO (1) HO (8) COM (2) VB (7) VCC (3) VS (6) For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 FN9037.2 August 28, 2012