Si8424DB Vishay Siliconix N-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 8 ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 Qg (Typ.) 20 nC • TrenchFET® Power MOSFET • Industry First 1.2 V Rated MOSFET • Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS MICRO FOOT Bump Side View 3 • Low Threshold Load Switch for Backside View Portable Devices - Low Power Consumption - Increased Battery Life • Ultra Low Voltage Load Switch 2 D D 8424 XXX S D G G 4 1 S Device Marking: 8424 N-Channel MOSFET xxx = Date/Lot Traceability Code Ordering Information: Si8424DB-T1-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 8 Gate-Source Voltage VGS ±5 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TC = 25 °C TA = 25 °C IS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C Package Reflow Conditionsd 8.1b,c A 20 5.2 2.3b,c 6.25 PD 4 2.78b,c W 1.78b,c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range 9.8 6.5b,c IDM Continuous Source-Drain Diode Current V 12.2 TA = 70 °C Pulsed Drain Current Unit IR/Convection - 55 to 150 °C 260 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump. Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8424DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a,b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State Symbol Typ. Max. RthJA 35 45 RthJF 16 20 Unit °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 72 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 8.9 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 V IGSS VDS = 0 V, VGS = 5 V 100 nA VDS = 8 V, VGS = 0 V 1 VDS = 8 V, VGS = 0 V , TJ = 70 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs - 2.5 0.35 VDS 5 V, VGS = 4.5 V 20 µA A VGS = 4.5 V, ID = 1 A 0.025 0.031 VGS = 2.5 V, ID = 1 A 0.027 0.033 VGS = 1.8 V, ID = 1 A 0.029 0.035 VGS = 1.5 V, ID = 1 A 0.032 0.043 VGS = 1.2 V, ID = 1 A 0.049 0.077 VDS = 4 V, ID = 1 A 8.3 13 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 1950 VDS = 4 V, VGS = 0 V, f = 1 MHz tr pF 350 VDS = 4 V, VGS = 5 V, ID = 1 A VDS = 4 V, VGS = 4.5 V, ID = 1 A 22 33 20 30 3.5 nC 1.8 VGS = 0.1 V, f = 1 MHz td(on) td(off) 610 8 VDD = 4 V, RL = 4 ID 1 A, VGEN = – 4.5 V, Rg = 1 tf For technical questions, contact: [email protected] 13 12 12 18 110 165 40 60 ns Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8424DB Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 6.25 A 20 IS = 1 A, VGS = 0 V 0.6 1.2 V 104 156 ns 88 132 nC IF = – 1 A, dI/dt = 100 A/µs, TJ = 25 °C 26 ns 78 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 20 VGS = 5 thru 1.5 V I D - Drain Current (A) I D - Drain Current (A) 15 10 5 15 10 TC = 125 °C 5 TC = 25 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 0 0.0 TC = - 55 °C 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 For technical questions, contact: [email protected] 1.5 1.8 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8424DB Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3000 0.12 RDS(on) - On-Resistance ( ) 2400 C - Capacitance (pF) 0.09 VGS = 1.2 V 0.06 VGS = 1.5 V VGS = 2.5 V 0.03 VGS = 1.8 V Ciss 1800 1200 Coss 600 Crss VGS = 4.5 V 0.00 0 5 10 0 15 0 20 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) RDS(on) vs. Drain Current Capacitance 1.5 5 ID = 1 A ID = 1 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 4 VDS = 4 V 3 VDS = 6.4 V 2 1 5 10 15 20 VGS = 4.5 V, 2.5 V, 1.8 V 1.1 VGS = 1.5 V 0.9 0.7 - 50 0 0 1.3 25 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10.00 0.050 ID = 1 A RDS(on) - On-Resistance () I S - Source Current (A) 0.045 TA = 150 °C 1.00 TA = 25 °C 0.10 0.040 0.035 TA = 125 °C 0.030 0.025 TA = 25 °C 0.01 0.0 0.020 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs Temp RDS(on) vs VGS vs Temperature www.vishay.com 4 For technical questions, contact: [email protected] 5 Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8424DB Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.8 80 0.7 60 ID = 250 µA Power (W) VGS(th) (V) 0.6 0.5 40 0.4 20 0.3 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.001 0.1 Threshold Voltage Single Pulse Power, Junction-to-Ambient 14 8 12 7 6 10 Power (W) ID - Drain Current (A) 10 1 Time (s) TJ - Temperature (°C) 8 6 5 4 3 4 2 2 1 0 0 0 25 50 75 100 125 150 TF - Foot Temperature (°C) 0 25 50 75 100 125 150 Case Temperature ( °C) Current Derating** Power Derating 100 Limited by RDS(on)* I D - Drain Current (A) 10 P(t) = 100 ms P(t) = 1s P(t) = 10s 1 DC 0.1 TA = 25 °C Single Pulse 0.01 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 ** The power dissipation PD is based on TJ(max.) = 150 °C, using junction-tofoot thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8424DB Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJ A = 72 °C/W 0.02 3. T JM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8424DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (0.8-mm PITCH) 4 x ∅ 0.30 ~ 0.31 Note 3 Solder Mask ∅ ~ 0.40 e A2 Silicon A A1 Bump Note 2 b Diameter e S Recommended Land E e 8424 XXX e S D Mark on Backside of Die Notes (unless otherwise specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Sn/Ag/Cu. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. Dim. Millimetersa Inches Min. Max. Min. Max. A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 1.520 1.600 0.0598 e S 0.800 0.360 0.0630 0.0315 0.400 0.0142 0.0157 Note: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74400. Document Number: 74400 S13-1847-Rev. C, 19-Aug-13 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. 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