DG2017 New Product Vishay Siliconix Low-Voltage, Low rON, Dual DPDT Analog Switch FEATURES BENEFITS APPLICATIONS D Low Voltage Operation (2.0 V to 5.5 V) D Low On-Resistance @ 2.7 V - rON: SW1, SW2 - 3.2 W SW3, SW4 - 0.64 W D Fast Switching: tON = 46 ns tOFF = 21 ns D QFN-16 (4x4 mm) Package D D D D D D D D D Space Saving Solution Low Power Consumption Guaranteed Low Voltage Operation Low Voltage Logic Compatible Cellular Phones Integrated Speaker Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems DESCRIPTION The DG2017 is a dual DPDT (double-pole/double-throw), optimized for high performance analog switching, and specifically designed to benefit portable audio applications. the use of multiple single SPDT devices as well as providing the advantage of on-resistance flatness and matching that single SPDT devices cannot offer. One pair of double-throw switches is sub 1 W for low impedance speaker performance while the second pair of double-throw switches is suitable for microphone applications. The DG2017 provides low charge injection (2 pC), fast switching time (tON and tOFF less than 100 ns), excellent Off-Isolation and Crosstalk (–70 dB @ 100 kHz). During operation, continuous current through any or all switches is rated at "200 mA, ideal for portable audio applications. With the DPDT configuration, the DG2017 provides the flexibility for stereo-single-end or differential BTL output structures with a fully integrated differential microphone switching solution. The DG2017 is an integrated monolithic device in a QFN-16 (4 x 4 mm) package that provides a space saving solution over Built on Vishay Siliconix’s low voltage CMOS process, the DG2017 contains an epitaxial layer that prevents latchup. Break-before-make is guaranteed. When on, each switch conducts equally well in both directions, and block up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION QFN-16 (4 X 4) COM1 NO1 16 15 V+ NC4 14 13 TRUTH TABLE Logic NC1 1 12 COM4 IN1, IN2 2 11 NO4 NO2 3 10 IN3, IN4 COM2 4 9 5 6 NC2 GND 7 NC3 NC1, 2, 3 and 4 NO1, 2, 3 and 4 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C 16-Pin QFN (4 x 4 mm) DG2017DN 8 NO3 COM3 Top View Document Number: 72228 S-31067—Rev. A, 26-May-03 www.vishay.com 1 DG2017 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "200 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Solder Reflow Conditionsd 16-Pin QFN (4 x 4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C Power Dissipation (Packages)b QFN-16 (4x4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 23.5 mW/_C above 70_C d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS (V+ = 3 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 1.6 Ve - 40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC, VCOM DC Characteristics On Resistance On-Resistance rON Flatnessd rON Matchd Switch Off Leakage Current rON (SW1, SW2) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full 3.2 3.7 4.3 rON (SW3, SW4) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.67 1.1 1.2 rON (SW1, SW2) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full 1.4 2.0 rON (SW3, SW4) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.12 0.3 DrON (SW1, SW2) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full 0.3 DrON (SW3, SW4) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.3 INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 3.3 V, VNO, VNC = 0.3 V/3.0 V VCOM = 0.3 V/3.0 V V+ = 3.3 V, VNO=VNC VCOM =0.3 V/3.0 V W Room Full - 0.5 5.0 0.5 5.0 Room Full - 0.5 5.0 0.5 5.0 Room Full - 0.5 5.0 0.5 5.0 1.6 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current www.vishay.com 2 Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 6 -1 V pF 1 mA Document Number: 72228 S-31067—Rev. A, 26-May-03 DG2017 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 1.6 Ve Limits - 40 to 85_C Tempa Minb Typc Maxb 62 85 91 Unit Dynamic Characteristics Turn On Time Turn-On Turn Off Time Turn-Off Break Before Make Time Break-Before-Make Charge Injectiond Off Isolationd Off-Isolation Crosstalkd NO, NC Off Capacitanced Channel On Capacitanced Channel-On tON, (SW1, SW2) Room Full tON, (SW3, SW4) Room Full 46 74 79 Room Full 12 35 36 Room Full 21 46 48 tON, (SW1, SW2) tON, (SW3, SW4) VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF (Figure 1,2) td, (SW1, SW2) Full 5 45 td, (SW3, SW4) Full 5 26 QINJ, (SW1, SW2) QINJ, (SW3, SW4) CL = 1 nF, VGEN = 0 V, RGEN = 0 W (Figure 3) 2 Room XTALK, (SW1, SW2) pC 1 OIRR, (SW1, SW2) OIRR, (SW3, SW4) - 68 RL = 50 W, CL = 5 pF, f = 1 MHz (Figure 4) - 51 Room dB - 69 XTALK, (SW3, SW4) - 51 COFF, (SW1, SW2) 12 COFF,, (SW3, SW4) CON, (SW1, SW2) ns 43 VIN = 0 or V+, V+ f = 1 MHz Room pF 86 CON, (SW3, SW4) 283 Power Supply Power Supply Range V+ Power Supply Current I+ 2.0 VOE = 0 or V+ 5.5 V 1.0 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. Document Number: 72228 S-31067—Rev. A, 26-May-03 www.vishay.com 3 DG2017 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Single Supply Voltage rON vs. VCOM and Single Supply Voltage 6.00 1.600 T = 25_C SW1 & SW2 IS=10 mA r ON - On-Resistance ( W ) V+ = 2.3 V 4.00 V+ = 2.7 V V+ = 3.3 V 3.00 T = 25_C SW3 & SW4 1.400 r ON - On-Resistance ( W ) 5.00 2.00 V+ = 5.0 V 1.200 1.000 V+ = 2.3 V, IS = 50 mA V+ = 2.7 V, IS = 100 mA 0.800 V+ = 3.3 V, IS = 100 mA 0.600 0.400 V+ = 5.0 V, IS = 100 mA 1.00 0.200 0.00 0.000 0 1 2 3 4 0 5 1 VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature V+ = 2.7 V 5 85_ C 25_ C 3.00 2.00 SW1 and SW2 1.00 85_ C 25_ C 25_ C V+ = 5.0 V 85_ C 25_ C -40_ C -40_ C 4.00 V+ = 5.0 V 85_ C 1.200 r ON - On-Resistance ( W ) 5.00 r ON - On-Resistance ( W ) 4 1.400 V+ = 2.7 V 1.000 -40_ C -40_ C 0.800 0.600 0.400 SW3 and SW4 0.200 IS=10 mA 0.00 IS=100 mA 0.000 0 1 2 3 4 5 0 1 VCOM - Analog Voltage (V) Supply Current vs. Temperature 4 5 10 mA I+ - Supply Current (A) 1 mA 1000 V+ = 5.0 V VIN = 0 V 100 V+ = 3 V 100 mA 10 mA 1 mA 100 nA 10 nA V+ = 3.0 V VIN = 0 V 10 - 60 2 3 VCOM - Analog Voltage (V) Supply Current vs. Input Switching Frequency 10000 I+ - Supply Current (nA) 3 rON vs. Analog Voltage and Temperature 6.00 1 nA 100 nA - 40 - 20 0 20 40 Temperature (_C) www.vishay.com 4 2 VCOM - Analog Voltage (V) 60 80 100 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Document Number: 72228 S-31067—Rev. A, 26-May-03 DG2017 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Leakage Current vs. Temperature Leakage vs. Analog Voltage 1000 800 600 400 INO(off), IINC(off) Leakage Current (pA) Leakage Current (pA) Leakage Current (pA) V+ = 5.0 V 100 ICOM(on) 10 - 40 - 20 0 - 200 INO(off), INC(off) - 400 V+ = 3 V 0 20 40 60 80 - 800 0.0 100 Temperature (_C) 0.5 Switching Time vs. Temperature t ON / t OFF - Switching Time (m s) t ON / t OFF - Switching Time (m s) 2.5 3.0 tON V+ = 2 V tON V+ = 2 V 80 tON V+ = 3 V 60 40 tON V+ = 5 V 20 tOFF V+ = 2 V tOFF V+ = 3 V - 20 0 20 40 60 80 60 tON V+ = 3 V 40 tOFF V+ = 2 V tON V+ = 5 V 20 tOFF V+ = 5 V tOFF V+ = 3 V tOFF V+ = 5 V - 40 80 0 - 60 100 - 40 - 20 0 20 40 60 80 100 Temperature (_C) Temperature (_C) Insertion Loss, Off-Isolation Crosstalk vs. Frequency Insertion Loss, Off-Isolation Crosstalk vs. Frequency 10 10 0 0 Loss Loss - 10 Loss, OIRR, X TALK (dB) Loss, OIRR, X TALK (dB) 2.0 Switching Time vs. Temperature 100 - 10 1.5 100 140 0 - 60 1.0 VCOM, VNO, VNC - Analog Voltage (V) 160 120 ICOM(off) - 600 ICOM(off) 1 - 60 ICOM(on) 200 XTALK - 20 - 30 OIRR - 40 - 50 DG2017 SW1 and SW2 V+ = 3 V RL = 50 W - 60 - 70 - 40 - 50 - 70 - 90 100 K - 90 100 K Frequency (Hz) Document Number: 72228 S-31067—Rev. A, 26-May-03 100 M 1G DG2017 SW3 and SW4 V+ =3 V RL = 50 W - 60 - 80 10 M OIRR - 30 - 80 1M XTALK - 20 1M 10 M 100 M 1G Frequency (Hz) www.vishay.com 5 DG2017 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage 3.0 60 2.5 40 VT Q - Charge Injection (pC) - Switching Threshold (V) V+ = 3 V 2.0 1.5 1.0 20 SW1 and SW2 0 - 20 SW3 and SW4 - 40 0.5 - 60 0.0 0.0 0 1 2 3 4 5 6 7 0.5 1.0 V+ - Supply Voltage (V) 1.5 2.0 2.5 3.0 VCOM - Analog Voltage (V) TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC tr t 5 ns tf t 5 ns VOUT 0.9 x VOUT IN Logic Input 50% VINL Switch Output COM VINH RL 300 W GND CL 35 pF Switch Output 0V tON tOFF 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL Ǔ R L ) R ON Figure 1. www.vishay.com 6 Switching Time Document Number: 72228 S-31067—Rev. A, 26-May-03 DG2017 New Product Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ NO COM VINH VINL VO VNO tr <5 ns tf <5 ns NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO 90% Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ DVOUT V+ Rgen VOUT NC or NO COM VOUT + IN Vgen IN CL = 1 nF VIN = 0 - V+ On Off On GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection V+ V+ 10 nF 10 nF V+ V+ NC or NO IN COM COM 0V, 2.4 V Meter COM IN 0 V, 2.4 V RL NC or NO GND HP4192A Impedance Analyzer or Equivalent GND Analyzer f = 1 MHz VCOM Off Isolation + 20 log V NOńNC Figure 4. Document Number: 72228 S-31067—Rev. A, 26-May-03 Off-Isolation Figure 5. Channel Off/On Capacitance www.vishay.com 7