SiB431EDK Datasheet

New Product
SiB431EDK
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)f, g
RDS(on) (Ω)
- 20
0.080 at VGS = - 4.5 V
-9
0.149 at VGS = - 2.5 V
- 1.2
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
• Typical ESD Protection 500 V
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
3.9 nC
PowerPAK SC-75-6L-Single
S
APPLICATIONS
• Load Switch for Portable Devices
1
D
Marking Code
2
D
BHX
3
6
G
D
5
S
G
XXX
Lot Traceability
and Date code
S
D
1.60 mm
Part # code
1.60 mm
D
4
P-Channel MOSFET
Ordering Information: SiB431EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
c, d
V
- 4.4a, b
- 3.5a, b
12
- 9g
- 2a, b
13
8.4
IS
PD
Unit
- 9g
- 8.1
IDM
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)
Limit
- 20
± 12
2.4a, b
1.6a, b
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 105 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 68882
S09-1500-Rev. B, 10-Aug-09
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New Product
SiB431EDK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
ID = - 250 µA
VDS = VGS, ID = - 250 µA
gfs
mV/°C
3.4
- 1.5
V
VDS = 0 V, VGS = ± 12 V
-2
mA
VDS = 0 V, VGS = ± 4.5 V
- 20
µA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
RDS(on)
V
- 25
- 0.6
- 12
µA
A
VGS = - 4.5 V, ID = - 4.4 A
0.066
0.080
VGS = - 2.5 V, ID = - 0.7 A
0.120
0.149
VDS = - 10 V, ID = - 4.4 A
8
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
360
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
95
60
VDS = - 10 V, VGS = - 10 V, ID = - 4.4 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.4 A
8.0
12
3.9
5.9
1.0
nC
1.16
f = 1 MHz
td(on)
VDD = - 10 V, RL = 2.8 Ω
ID ≅ - 3.5 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
1.5
7.6
15
15
23
25
38
15
23
tf
8
16
td(on)
2
4
VDD = - 10 V, RL = 2.8 Ω
ID ≅ - 3.5 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
tf
9
18
15
23
7
14
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
-9
- 12
IS = - 3.5 A, VGS = 0 V
IF = - 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
15
23
ns
6
9
nC
8
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68882
S09-1500-Rev. B, 10-Aug-09
New Product
SiB431EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1.2
10
IGSS at 150 °C
1
I GSS (mA)
I GSS (mA)
0.8
IGSS at 25 °C
10-1
10-2
IGSS at 25 °C
0.4
10-3
IGSS at 150 °C
10-4
0.0
10-5
0
3
6
9
12
0
15
3
6
9
12
VGS - Gate-to-Source Voltage (V)
18
Gate Source Voltage vs. Gate Current
Gate Source Voltage vs. Gate Current
12
2.0
VGS = 5 V thru 3 V
VGS = 2.5 V
TC = - 55 °C
1.6
9
I D - Drain Current (A)
I D - Drain Current (A)
15
VGS - Gate-to-Source Voltage (V)
VGS = 2 V
6
1.2
TC = 25 °C
0.8
TC = 125 °C
3
VGS = 1.5 V
0.4
VGS = 1 V
0
0
1
2
3
4
0.0
0.0
5
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
2.0
600
0.25
500
VGS = 2.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.4
0.20
0.15
0.10
VGS = 4.5 V
Ciss
400
300
200
Coss
0.05
100
Crss
0.00
0
0
3
6
9
12
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 68882
S09-1500-Rev. B, 10-Aug-09
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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New Product
SiB431EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
10
1.6
8
VDS = 10 V
6
VDS = 16 V
4
VGS = 4.5 V; ID = 4.4 A
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 4.4 A
1.2
1.0
2
VGS = 2.5 V; ID = 0.7 A
0.8
0.6
- 50
0
0
2
4
6
8
- 25
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
100
0.20
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 4.4 A
10
TJ = 150 °C
TJ = 25 °C
1
0.15
0.10
TJ = 125 °C
0.05
TJ = 25 °C
0.00
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
3
1.4
20
1.2
15
Power (W)
VGS(th) (V)
12
On-Resistance vs. Gate-to-Source Voltage
Soure-Drain Diode Forward Voltage
ID = 250 µA
1.0
0.8
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4
9
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0.6
- 50
6
10
5
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Document Number: 68882
S09-1500-Rev. B, 10-Aug-09
New Product
SiB431EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
12
16
12
Package Limited
Power (W)
I D - Drain Current (A)
9
6
3
8
4
0
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating**
Power Junction-to-Case
1.5
Power (W)
1.2
0.9
0.6
0.3
** The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
0.0
0
25
50
75
100
TA - Ambient Temperature (°C)
Power Junction-to-Ambient
Document Number: 68882
S09-1500-Rev. B, 10-Aug-09
125
150
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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New Product
SiB431EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10 -2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68882.
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Document Number: 68882
S09-1500-Rev. B, 10-Aug-09
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Revision: 02-Oct-12
1
Document Number: 91000