New Product SiB431EDK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)f, g RDS(on) (Ω) - 20 0.080 at VGS = - 4.5 V -9 0.149 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area • Typical ESD Protection 500 V • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 3.9 nC PowerPAK SC-75-6L-Single S APPLICATIONS • Load Switch for Portable Devices 1 D Marking Code 2 D BHX 3 6 G D 5 S G XXX Lot Traceability and Date code S D 1.60 mm Part # code 1.60 mm D 4 P-Channel MOSFET Ordering Information: SiB431EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID TJ, Tstg Operating Junction and Storage Temperature Range c, d V - 4.4a, b - 3.5a, b 12 - 9g - 2a, b 13 8.4 IS PD Unit - 9g - 8.1 IDM Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) Limit - 20 ± 12 2.4a, b 1.6a, b - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 105 °C/W. f. Based on TC = 25 °C. g. Package limited. Document Number: 68882 S09-1500-Rev. B, 10-Aug-09 www.vishay.com 1 New Product SiB431EDK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea ID = - 250 µA VDS = VGS, ID = - 250 µA gfs mV/°C 3.4 - 1.5 V VDS = 0 V, VGS = ± 12 V -2 mA VDS = 0 V, VGS = ± 4.5 V - 20 µA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) V - 25 - 0.6 - 12 µA A VGS = - 4.5 V, ID = - 4.4 A 0.066 0.080 VGS = - 2.5 V, ID = - 0.7 A 0.120 0.149 VDS = - 10 V, ID = - 4.4 A 8 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 360 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 95 60 VDS = - 10 V, VGS = - 10 V, ID = - 4.4 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.4 A 8.0 12 3.9 5.9 1.0 nC 1.16 f = 1 MHz td(on) VDD = - 10 V, RL = 2.8 Ω ID ≅ - 3.5 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) 1.5 7.6 15 15 23 25 38 15 23 tf 8 16 td(on) 2 4 VDD = - 10 V, RL = 2.8 Ω ID ≅ - 3.5 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) tf 9 18 15 23 7 14 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -9 - 12 IS = - 3.5 A, VGS = 0 V IF = - 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 15 23 ns 6 9 nC 8 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68882 S09-1500-Rev. B, 10-Aug-09 New Product SiB431EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1.2 10 IGSS at 150 °C 1 I GSS (mA) I GSS (mA) 0.8 IGSS at 25 °C 10-1 10-2 IGSS at 25 °C 0.4 10-3 IGSS at 150 °C 10-4 0.0 10-5 0 3 6 9 12 0 15 3 6 9 12 VGS - Gate-to-Source Voltage (V) 18 Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 12 2.0 VGS = 5 V thru 3 V VGS = 2.5 V TC = - 55 °C 1.6 9 I D - Drain Current (A) I D - Drain Current (A) 15 VGS - Gate-to-Source Voltage (V) VGS = 2 V 6 1.2 TC = 25 °C 0.8 TC = 125 °C 3 VGS = 1.5 V 0.4 VGS = 1 V 0 0 1 2 3 4 0.0 0.0 5 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 2.0 600 0.25 500 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.4 0.20 0.15 0.10 VGS = 4.5 V Ciss 400 300 200 Coss 0.05 100 Crss 0.00 0 0 3 6 9 12 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Document Number: 68882 S09-1500-Rev. B, 10-Aug-09 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 New Product SiB431EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 10 1.6 8 VDS = 10 V 6 VDS = 16 V 4 VGS = 4.5 V; ID = 4.4 A 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 4.4 A 1.2 1.0 2 VGS = 2.5 V; ID = 0.7 A 0.8 0.6 - 50 0 0 2 4 6 8 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 100 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.4 A 10 TJ = 150 °C TJ = 25 °C 1 0.15 0.10 TJ = 125 °C 0.05 TJ = 25 °C 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 3 1.4 20 1.2 15 Power (W) VGS(th) (V) 12 On-Resistance vs. Gate-to-Source Voltage Soure-Drain Diode Forward Voltage ID = 250 µA 1.0 0.8 www.vishay.com 4 9 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0.6 - 50 6 10 5 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Document Number: 68882 S09-1500-Rev. B, 10-Aug-09 New Product SiB431EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 16 12 Package Limited Power (W) I D - Drain Current (A) 9 6 3 8 4 0 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating** Power Junction-to-Case 1.5 Power (W) 1.2 0.9 0.6 0.3 ** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the 0.0 0 25 50 75 100 TA - Ambient Temperature (°C) Power Junction-to-Ambient Document Number: 68882 S09-1500-Rev. B, 10-Aug-09 125 150 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 5 New Product SiB431EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10 -2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68882. www.vishay.com 6 Document Number: 68882 S09-1500-Rev. B, 10-Aug-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000