2SA2016 / 2SC5569 Ordering number : ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. High allowable power dissipation. Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V IC ICP IB (--)7 A (--)10 A Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C (--)1.2 A 1.3 W 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain hFE fT Gain-Bandwidth Product Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA Ratings min typ max 200 Unit (--)0.1 µA (--)0.1 µA 560 (290)330 Marking : 2SA2016 : AW 2SC5569 : FF MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405EA MS IM TB-00001406 / 52501 TS KT TA-3259 No.6309-1/5 2SA2016 / 2SC5569 Continued from preceding page. Parameter Symbol Output Capacitance Cob VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)2A, IB=(--)40mA IC=(--)10µA, IE=0A Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO IC=(--)100µA, RBE=0Ω IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A See specified Test Circuit. Turn-On Time ton tstg Storage Time Fall Time typ tf Unit max (50)28 IC=(--)3.5A, IB=(--)175mA IC=(--)2A, IB=(--)40mA VCE(sat)2 Base-to-Emitterr Saturation Voltage min VCB=(--)10V, f=1MHz VCE(sat)1 Collector-to-Emitter Saturation Voltage Ratings Conditions pF (--230)160 (--390)240 mV (--240)110 (--400)170 mV (--)0.83 (--)1.2 V (--50)100 V (--50)100 V (--)50 V (--)6 V (40)30 ns See specified Test Circuit. (225)420 ns See specified Test Circuit. 25 ns Package Dimensions unit : mm 7008-003 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% Top View INPUT 4.5 1.6 OUTPUT IB2 RB VR RL 1.5 50Ω + 470µF 2.5 1.0 1 2 4.0 + 100µF VBE= --5V IC=20IB1= --20IB2=2.5A For PNP, the polarity is reversed. 3 0.4 VCC=25V 0.4 0.5 1.5 3.0 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP IC -- VCE A m A --50m A m --40 --30mA --5 A 0m 0 --1 --4 70mA --20mA --3 --10mA --2 5 60mA 50mA 40mA 30mA 80 6 90mA Collector Current, IC -- A --6 IC -- VCE 7 --90mA --80mA --70mA --60mA 20mA 4 3 100m A 2SA2016 Collector Current, IC -- A --7 10mA 2 1 --1 IB=0mA 0 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V --2.0 IT00206 0 0 IB=0mA 2SC5569 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V IT00207 No.6309-2/5 2SA2016 / 2SC5569 IC -- VBE --5 --4 --3 --2 --1 --0.2 --0.4 --0.6 --0.8 --1.0 3 2 0 100 7 5 Ta=75°C 3 25°C --25°C 2 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 10 0.01 5 7 --10 IT00210 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2016 IC / IB=20 3 2 --100 7 5 5°C Ta=7 °C --25 3 2 25°C --10 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC --10000 7 5 °C 25° C 3 2 Ta = --2 5 --1000 7 5 °C 2SA2016 IC / IB=50 3 2 5°C --100 7 5 7 Ta= --10 --0.01 25° --25°C 3 2 2 3 5 7 --0.1 2 C 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00213 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00211 VCE(sat) -- IC 1000 7 5 2SC5569 IC / IB=20 3 2 100 7 5 5°C 3 2 7 Ta= C 25° C --25° 10 7 5 3 2 1.0 0.01 5 7 --10 IT00212 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT00214 VCE(sat) -- IC 10000 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 75 --1.0 --0.01 2SC5569 VCE=2V Collector Current, IC -- A VCE(sat) -- IC --1000 1.4 IT00209 5 2 5 7 --0.1 1.2 7 3 3 1.0 100 2 2 0.8 hFE -- IC 5 3 10 --0.01 0.6 7 DC Current Gain, hFE Ta=75°C 25°C --25°C 2 0.4 1000 5 3 0.2 Base-to-Emitter Voltage, VBE -- V 2SA2016 VCE= --2V 7 DC Current Gain, hFE 4 --1.2 --1.4 IT00208 hFE -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 1 Base-to-Emitter Voltage, VBE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 6 0 0 0 7 5 2SC5569 VCE=2V 7 Collector Current, IC -- A --6 Ta= 75° 2 5 °C C --25° C Collector Current, IC -- A --7 IC -- VBE 8 2SA2016 VCE= --2V Ta=7 5°C 25°C --25° C --8 2SC5569 IC / IB=50 3 2 1000 7 5 3 2 100 7 5 5°C Ta=7 C --25° 3 2 10 0.01 2 3 5 7 0.1 2 3 C 25° 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00215 No.6309-3/5 2SA2016 / 2SC5569 VBE(sat) -- IC 2SA2016 IC / IB=50 7 5 3 2 --1000 Ta= --25°C 7 75°C 5 25°C 3 2 --100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 5 3 2 10 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00217 Cob -- VCB 2SC5569 f=1MHz 2 100 7 5 3 2 10 7 5 5 7 0.1 5 2 3 5 7 1.0 2 100 7 5 3 2 5 7 10 2 10 3 5 IT00219 2SC5569 VCE=10V 7 Gain-Bandwidth Product, f T -- MHz 3 3 f T -- IC 1000 5 2 Collector-to-Base Voltage, VCB -- V IT00218 2SA2016 VCE= --10V 7 Gain-Bandwidth Product, f T -- MHz 3 f T -- IC 1000 5 3 2 100 7 5 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 0.01 5 7 --10 1.0 7 5 s DC op era tio n 3 2 2SA2016 / 2SC5569 Tc=25°C Single pulse For PNP, the minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Dissipation, PC -- W s ms 0µ 10 10 IC=7A 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00221 PC -- Ta 2.0 100ms 1m 3 Collector Current, IC -- A ASO ICP=10A 2 IT00220 s 0µ 50 Collector Current, IC -- A 1000 3 2 5 7 --0.1 3 2 2 3 100 0.1 7 5 3 5 2SA2016 f=1MHz 2 10 7 5 5 Collector Current, IC -- A Cob -- VCB 3 2 2SC5569 IC / IB=50 7 100 0.01 5 7 --10 IT00216 Collector Current, IC -- A 5 VBE(sat) -- IC 10000 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- mV --10000 2SA2016 / 2SC5569 1.5 1.3 M ou nte do na 1.0 ce ram ic bo ard (25 0m 0.5 m2 ✕0 .8m m) 0 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT00222 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00223 No.6309-4/5 2SA2016 / 2SC5569 PC -- Tc 4.0 2SA2016 / 2SC5569 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01535 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.6309-5/5