Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SC5569
NPN SILICON TRANSISTOR
DC/DC CONVERTER
APPLICATIONS

FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching.
*High allowable power dissipation.
*Complementary to 2SA2016.

1
SOT-89
APPLICATIONS
*Relay drivers, lamp drivers, motor drivers, strobes

ORDERING INFORMATION
Ordering Number
Note:

2SC5569G-x-AB3-R
Pin assignment: E: Emitter
B: Base
Package
SOT-89
C: Collector
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
MARKING
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
7
A
Collector Current (Pulse)
Icp
10
A
Base Current
IB
1.2
A
Collector Dissipation (Note 2)
1.3
W
PC
3.5
W
Collector Dissipation (TC=25C)
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on ceramic board (250mm × 0.8mm)

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Collector to Emitter Saturation Voltage
VCE(SAT)
Base to Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
VBE(SAT)
fT
COB
TON
TSTG
TF
TEST CONDITIONS
Ic=10μA,IE=0
Ic=1mA,RBE=∞
IE=10μA,IE=0
VCB=40V,IE=0
VEB=4V,Ic=0
VCE=2V,Ic=500mA
Ic=3.5A,IB=175mA
Ic=2A,IB=40mA
Ic=2A,IB=40mA
VCE=10V,Ic=500mA
VCB=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
80
50
6
TYP
200
160
110
0.83
330
28
30
420
25
MAX
0.1
0.1
560
240
170
1.2
UNIT
V
V
V
μA
μA
mV
mV
V
MHz
pF
ns
ns
ns
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
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.Collector to Emitter Voltage
Collector Current vs.Base to Emitter Voltage
7
8
5
40mA
30mA
4
20mA
3
10mA
2
1
0
6
5
4
3
2
1
IB=0
0
0.4
0.8
1.2
1.6
0
2.0
DC Current Gain vs.Collector Current
VCE=2V
TA=75°C
3
25°C
2
-25°C
10
0
7
5
3
2
1
00.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector to Emitter Saturation Voltage vs.Collector Current
5 7 10
Collector Current, Ic (A)
Collector to Emitter
Saturation Voltage, V CE(SAT) (mv)
100
0
7
5
0
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
DC Current Gain,hFE
VCE=2V
7
TA =7
5°C
mA
50mA
100
Collector Current, Ic (A)
6
Collector Current, Ic (A)
70mA
60mA
80mA
90mA
25°C
-25°C

1000
7
5
3
2
100
7
5
3
2
I C /I B =20
5
=7
TA
10
7
5
3
2
°C
-2
1.0
0.01 2 3 5 7 0.1
°C
25
5°C
2 3
5 7 1.0
2 3 5 7 10
Collector Current, Ic (A)
Collector Current vs.Collector to Emitter Voltage
ICP=10A
100ms
DC
1.0
7
5
3
2
0.1
7
5
3
2
op
er
s
0μ
1m
s
10
m
s
IC=7A
10
10
7
5
3
2
s
0μ
50
Collector Current, Ic (A)
2
at
ion
TC=25°C
Single pulse
For PNP,the minus sign is omitted.
0.01
0.1
2 3 5 7 1.0
2 3
5 7 10
2 3
5 7 100
Collector to Emitter Voltage, VCE (V)
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NPN SILICON TRANSISTOR
Collector Dissipation, PC (W)
Collector Dissipation, PC (W)
Output Capacitance, COB (pF)
Gain Bandwidth Produtc, fT (MHz)
Collector to Emitter
Saturation Voltage, V CE(SAT) (mV)
Collector to Emitter
Saturation Voltage, V BE(SAT) (mv)
TYPICAL CHARACTERISTICS (Cont.)

Mo
un
ted
on
ac
er
am
ic
b
oa
rd
(2
50
mm
×0
.8m
m2
)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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