TSA5888 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -40V IC -5.5A VCE(SAT) Features -175mV @ IC / IB = -3.5A / -175mA Ordering Information Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. ● High allowable power dissipation. ● ● ● ● ● Part No. Package Packing TSA5888CY RMG SOT-89 1Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol Limit Unit VCBO VCEO VEBO -50 -40 -7.5 -5.5 -15 V V V IC Collector Power Dissipation PC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TSTG A 0.9 W o +150 - 55 to +150 C C o Note: For a device surface mounted on 15mm x 15mm x 16mm FR4 PCB Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Turn-ON Time Turn-OFF Time Conditions IC = -100uA, IE = 0 IC = -10mA, IB = 0 IE = -100uA, IC = 0 VCB = -40V, IE = 0 VEB = -6V, IC = 0 IC / IB = -2A / -40mA IC / IB = -3.5A / -175mA IC / IB = -2A / -40mA VCE = -2V, IC = -10mA VCE =-10V, IE=50mA, VCB = -10V, f=1MHz VCC = -10V,IC=-1A -IB1=IB2=-100mA 1/5 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VBE(SAT) hFE 1 fT Cob Ton Toff -50 -40 -7.5 -----200 ----- ------175 -175 -0.9 -152 53 35 385 ----20 -20 -400 -390 -1.2 560 ----- V V V uA uA mV mV MHz pF ns ns Version: B12 TSA5888 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Collector Current Figure 3. VBE(SAT) v.s. Collector Current Figure 4. Transition Frequency vs. Emitter Current Figure 5. Cob vs. Collector-Base Voltage Figure 6. Cib vs. Emitter-Base Voltage 2/5 Version: B12 TSA5888 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 7. Power Dissipation vs. Ambient Temperature 3/5 Version: B12 TSA5888 Low Vcesat PNP Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: B12 TSA5888 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B12