ACTS161MS Radiation Hardened 4-Bit Synchronous Counter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96716 and Intersil’s QM Plan 16 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835, DESIGNATOR CDIP2-T16, LEAD FINISH C TOP VIEW • 1.25 Micron Radiation Hardened SOS CMOS MR 1 16 VCC • Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) CP 2 15 TC P0 3 14 Q0 • SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg P1 4 13 Q1 • Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse P2 5 12 Q2 P3 6 11 Q3 PE 7 10 TE • Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) • Dose Rate Survivability . . . . . . . . . . . >1012 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Conditions 9 SPE GND 8 • Military Temperature Range . . . . . . . . . . . . . . . . . . -55oC to +125oC • Significant Power Reduction Compared to ALSTTL Logic • DC Operating Voltage Range . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V 16 PIN CERAMIC FLATPACK MIL-STD-1835, DESIGNATOR CDFP4-F16, LEAD FINISH C TOP VIEW • Input Logic Levels - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current ≤ 1µA at VOL, VOH MR 1 16 VCC CP 2 15 TC Description P0 3 14 Q0 P1 4 13 Q1 The Intersil ACTS161MS is a Radiation Hardened 4-Bit Binary Synchronous Counter, featuring asynchronous reset and load ahead carry logic. The MR is an active low master reset. SPE is an active low Synchronous Parallel Enable which disables counting and allows data at the preset inputs (P0 - P3) to load the counter. CP is the positive edge clock. TC is the terminal count or carry output. Both TE and PE must be high for counting to occur, but are irrelevant to loading. TE low will keep TC low. P2 5 12 Q2 P3 6 11 Q3 PE 7 10 TE GND 8 9 • Fast Propagation Delay . . . . . . . . . . . . . . . . 25ns (Max), 16ns (Typ) SPE The ACTS161MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic family. The ACTS161MS is supplied in a 16 lead Ceramic Flatpack (K suffix) or a Ceramic Dual-In-Line Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE 5962F9671601VEC -55oC to +125oC MIL-PRF-38535 Class V 16 Lead SBDIP 5962F9671601VXC -55oC to +125oC MIL-PRF-38535 Class V 16 Lead Ceramic Flatpack ACTS161D/Sample 25oC Sample 16 Lead SBDIP ACTS161K/Sample 25oC Sample 16 Lead Ceramic Flatpack ACTS161HMSR 25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 518893 File Number 4095 Spec Number ACTS161MS Functional Diagram P0 P1 3 P2 4 P3 5 6 Q0 Q1 Q2 Q3 7 PE 10 TE TE TE 9 SPE 1 MR P T0 D0 Q0 P T1 MR GND D1 Q1 P T2 MR CP D2 Q2 P T3 MR CP D3 Q3 MR CP CP 2 CP 14 13 Q0 12 Q1 11 Q2 15 Q3 TC TRUTH TABLE INPUTS OPERATING MODE OUTPUTS MR CP PE TE SPE PN QN TC Reset (Clear) L X X X X X L L Parallel Load H X X I I L L H X X I h H (Note 1) Count H h h h (Note 3) X count (Note 1) Inhibit H X I (Note 2) X h (Note 3) X qN (Note 1) H X X I (Note 2) h (Note 3) X qN L H = High Steady State, L = Low Steady State, h = High voltage level one setup time prior to the Low-to-High clock transition, I = Low voltage level one setup time prior to the Low-to-High clock transition, X = Don’t Care,q = Lower case letters indicate the state of the referenced output prior to the Low-to-High clock transition, = Low-to-High Transition. NOTES: 1. The TC output is High when TE is High and the counter is at Terminal Count (HHHH). 2. The High-to-Low transition of PE or TE should only occur while CP is High for conventional operation. 3. The Low-to-High transition of SPE should only occur while CP is High for conventional operation. Spec Number 2 518893 ACTS161MS Die Characteristics DIE DIMENSIONS: 88 mils x 88 mils 2240mm x 2240mm METALLIZATION: Type: AlSi Metal 1 Thickness: 7.125kÅ ±1.125kÅ Metal 2 Thickness: 9kÅ ±1kÅ GLASSIVATION: Type: SiO2 Thickness: 8kÅ ±1kÅ WORST CASE CURRENT DENSITY: < 2.0 x 105A/cm2 BOND PAD SIZE: 110µm x 110µm 4.3 mils x 4.3 mils Metallization Mask Layout ACTS161MS CP (2) MR (1) VCC (16) TC (15) P0 (3) (14) Q0 P1 (4) (13) Q1 P2 (5) (12) Q2 P3 (6) (11) Q3 (7) PE (8) GND (9) SPE (10) TE Spec Number 3 518893 ACTS161MS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 4