DG406B, DG407B www.vishay.com Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406B is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407B selects one of eight differential inputs to a common differential output. Break-before-make switching action protects against momentary shorting of inputs. • Low on-resistance - RDS(on): 45 An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. All control inputs, address (Ax) and enable (EN) are TTL compatible over the full specified operating temperature range. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Applications for the DG406B, DG407B include high speed data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. Designed in the 44 V silicon-gate CMOS process, the absolute maximum voltage rating is extended to 44 V, allowing operation with ± 20 V supplies. Additionally single (12 V) supply operation is allowed. An epitaxial layer prevents latchup. • Low charge injection - Q: 11 pC Available • Fast transition time - tTRANS: 115 ns Available • Low power: 0.2 mW • Single supply capability Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. BENEFITS • • • • • • Higher accuracy Reduced glitching Improved data throughput Reduced power consumption Increased ruggedness Wide supply ranges: ± 5 V to ± 20 V APPLICATIONS • • • • • • • Data acquisition systems Audio signal routing Medical instrumentation ATE systems Battery powered systems High-rel systems Single supply systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG406B DG407B Dual-In-Line and SOIC Wide-Body V+ 1 28 Da V- Db 2 27 V- 26 S8 NC 3 26 S8a 25 S7 S8b 4 25 S7a 5 24 S6a V+ 1 28 D NC 2 27 NC S16 3 4 Dual-In-Line and SOIC Wide-Body S15 5 24 S6 S7b S14 6 23 S5 S6b 6 23 S5a 22 S4 S5b 7 22 S4a 21 S3 S4b 8 21 S3a S13 S12 7 8 S11 9 20 S2 S3b 9 20 S2a S10 10 19 S1 S2b 10 19 S1a 18 EN S1b 11 18 EN 17 A0 S9 11 GND 12 17 A0 GND 12 NC 13 16 A1 NC 13 A3 14 15 A2 NC Decoders/Drivers Top View S13-2513-Rev. D, 09-Dec-13 Decoders/Drivers 14 16 A1 15 A2 Top View Document Number: 72552 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION S15 Da V- V+ D 28 27 26 Db V+ 1 NC NC 2 S 8b NC 3 S8 S 16 4 S 8a PLCC and LCC DG407B 4 3 2 1 28 27 26 V- PLCC and LCC DG406B 5 25 S7 S7b 5 25 S7a S14 6 24 S6 S6b 6 24 S6a S13 7 23 S5 S5b 7 23 S5a S4b 8 22 S4a 22 S11 9 21 S3 S3b 9 21 S3a 20 S2 S2b 10 20 S2a 19 S1 S1b 11 19 S1a EN A0 A1 A2 NC 12 13 14 15 16 17 18 NC 12 13 14 15 16 17 18 EN Decoders/Drivers A0 Decoders/Drivers A1 11 A2 S9 A3 10 NC S10 GND 8 S4 GND S12 Top View Top View TRUTH TABLE (DG406B) TRUTH TABLE (DG407B) A3 A2 A1 A0 EN ON SWITCH A2 A1 A0 EN ON SWITCH X X X X 0 None X X X 0 None 0 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 2 0 0 1 1 2 0 0 1 0 1 3 0 1 0 1 3 0 0 1 1 1 4 0 1 1 1 4 0 1 0 0 1 5 1 0 0 1 5 0 1 0 1 1 6 1 0 1 1 6 0 1 1 0 1 7 1 1 0 1 7 0 1 1 1 1 8 1 1 1 1 8 1 0 0 0 1 9 1 0 0 1 1 10 1 0 1 0 1 11 1 0 1 1 1 12 1 1 0 0 1 13 1 1 0 1 1 14 1 1 1 0 1 15 1 1 1 1 1 16 Notes • Logic “0” = VAL 0.8 V • Logic “1” = VAH 2.4 V • X = Do not care ORDERING INFORMATION (DG406B) ORDERING INFORMATION (DG407B) TEMP. RANGE TEMP. RANGE -40 °C to 85 °C PACKAGE PART NUMBER 28-Pin Plastic DIP DG406BDJ, DG406BDJ-E3 28-Pin PLCC DG406BDN, DG406BDN-T1-E3 28-Pin Widebody SOIC DG406BDW, DG406BDW-E3, DG406BDW-T1-E3 -40 °C to 85 °C PACKAGE PART NUMBER 28-Pin Plastic DIP DG407BDJ, DG407BDJ-E3 28-Pin PLCC DG407BDN, DG407BDN-T1-E3 28-Pin Widebody SOIC DG407BDW, DG407BDW-E3, DG407BDW-T1-E3 Note • -T1 indicates Tape and Reel, -E3 indicates Lead-Free and RoHS Compliant, NO -E3 indicates standard Tin/Lead finish. S13-2513-Rev. D, 09-Dec-13 Document Number: 72552 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT 44 V+ to V-g Voltages Referenced to V- GND to V- UNIT -25 V (V-) - 2 to (V+) + 2 or 20 mA, whichever occurs first Digital Inputsa, VS, VD Current (any terminal) 30 Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature Power Dissipation (Package)b mA -65 to 150 °C 28-Pin Plastic DIPc 625 mW 28-Pin Plastic PLCCc 450 mW 28-Pin Widebody SOICf 450 mW Notes a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 8.3 mW/°C above 75 °C. d. Derate 16 mW/°C above 75 °C. e. Derate 18 mW/°C above 75 °C. f. Derate 6 mW/°C above 75 °C. g. Also applies when V- = GND. SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED TEMP.b TYP.c V+ = 15 V, V- = -15 V VAL = 0.8 V, VAH = 2.4 Vf D SUFFIX -40 °C to 85 °C UNIT MIN.d MAX.d Analog Switch Analog Signal Rangee Drain-Source On-Resistance RDS(on) Matching Between Channelsg Source Off Leakage Current VANALOG -15 15 V - 60 VD = ± 10 V, IS = -10 mA sequence each switch on Full 45 - 74 RDS(on) VD = ± 10 V Room 5 - - IS(off) VS = ± 10 V, VD = ± 10 V, VEN = 0 V Room - -0.5 0.5 Full - -5 5 ID(off) VD = ± 10 V, VS = ± 10 V, VEN = 0 V DG407B DG406B Drain On Leakage Current 45 RDS(on) DG406B Drain Off Leakage Current Full Room ID(on) DG407B VS = VD = ± 10 V sequence each switch on Room - -1 1 Full - -40 40 Room - -1 1 Full - -20 20 Room - -1 1 Full - -40 40 Room - -1 1 Full - -20 20 % nA Digital Control Logic High Input Voltage VINH Full - 2.4 - Logic Low Input Voltage VINL Full - - 0.8 Logic High Input Current IAH VA = 2.4 V, 15 V Full - -1 1 Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full - -1 1 Logic Input Capacitance Cin f = 1 MHz Room 6 - - S13-2513-Rev. D, 09-Dec-13 V μA pF Document Number: 72552 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED TEMP.b TYP.c V+ = 15 V, V- = -15 V D SUFFIX -40 °C to 85 °C UNIT MIN.d VAL = 0.8 V, VAH = 2.4 Vf MAX.d Dynamic Characteristics Transition Time tTRANS see figure 2 Break-Before-Make Interval tOPEN see figure 4 Enable Turn-On Time tON(EN) see figure 3 Enable Turn-Off Time tOFF(EN) Room 115 - 148 Full - - 161 Room 39 10 - Full - 21 - Room 75 - 107 123 Full - - Room 50 - 88 Full - - 94 ns Q CL = 1 nF, VS = 0 V RS = 0 Room 11 - - pC Off Isolationh OIRR VEN = 0 V, RL = 50 , f = 1 MHz Room -86 - - dB Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 1 MHz Room 6 - - Drain Off Capacitance Room 108 - - DG407B CD(off) Room 54 - - Drain On Capacitance DG407B Charge Injection DG406B CD(on) VEN = 0 V, VD = 0 V, f = 1 MHz Room 114 - - Room 57 - - Room 23 - 30 Full - - 75 Room -0.02 -1 - Full - -10 - Room 28 - 500 pF Power Supplies Positive Supply Current I+ Negative Supply Current I- Positive Supply Current I+ VEN = VA = 0 V or 5 V VEN = 2.4 V, VA = 0 V Negative Supply Current I- Full - - 700 Room -0.01 -20 - Full - -20 - μA Notes a. Guaranteed by ± 15 V leakage test, not production tested. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on channel 4 due to proximity to the drain pin. S13-2513-Rev. D, 09-Dec-13 Document Number: 72552 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED TEMP.b TYP.c V+ = 15 V, V- = -15 V D SUFFIX -40 °C to 85 °C UNIT MIN.d VAL = 0.8 V, VAH = 2.4 Vf MAX.d Analog Switch Analog Signal Rangee Drain-Source On-Resistance RDS(on) Matching Between Channelsg Source Off Leakage Currenta Drain Off Leakage Current DG406B Drain On Leakage Current DG406B DG407B VANALOG Full - 0 12 V RDS(on) Room 78 - 100 Room 5 - - % Room - -0.5 0.5 Room - -1 1 Room - -1 1 Room - -1 1 Room - -1 1 Room 130 - 163 Room 93 - 125 Room 63 - 94 Room 9 - - Room 13 - 30 Full - - 75 Room -0.01 -20 - Full - -20 - RDS(on) IS(off) ID(off) VD = 3 V, IS = -1 mA sequence each switch on VD = 10 V or 0.5 V, VS = 0.5 V or 10 V, VEN = 0 V ID(on) VS = VD = ± 10 V sequence each switch on Transition Time tTRANS VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V Enable Turn-On Time tON(EN) Enable Turn-Off Time tOFF(EN) DG407B nA Dynamic Characteristics Charge Injection Q VINH = 2.4 V, VINL = 0 V, VIN = 5 V CL = 1 nF, VS = 6 V RS = 0 ns pC Power Supplies Positive Supply Current Positive Supply Current I+ I+ VEN = 0 V or 5 V VA = 0 V or 5 V μA Notes a. Guaranteed by ± 15 V leakage test, not production tested. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on channel 4 due to proximity to the drain pin. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2513-Rev. D, 09-Dec-13 Document Number: 72552 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 350 TA = 25 °C 105 ±5V 85 ±8V 65 ± 10 V ± 12 V ± 15 V ± 20 V 45 25 5 - 20 R DS(on) - Drain-Source On-Resistance (Ω) R DS(on) - Drain-Source On-Resistance () 125 TA = 25 °C 300 V+ = 5.0 V 250 V+ = 10 V 200 V+ = 12 V 150 V+ = 15 V 100 V+ = 20 V V+ = 22 V 50 0 - 15 - 10 -5 0 5 10 15 0 20 2 4 6 10 12 16 18 20 22 On-Resistance vs. VD and Unipolar Supply Voltage 85 145 V ± = ± 15 V 75 85 °C 65 125 °C 55 45 25 °C 35 - 55 °C 25 15 5 - 15 85 °C 125 125 °C 105 85 25 °C 65 - 55 °C 45 V+ = 12 V V- = 0 V 25 5 - 10 -5 0 5 10 15 0 2 4 VD - Drain Voltage (V) 8 10 12 On-Resistance vs. VD and Temperature 200 150 6 VD - Drain Voltage (V) On-Resistance vs. VD and Temperature 10000 V- = - 15 V TA = 25 °C V ± = ± 15 V 1000 100 IS(off) ID(on) ID(off) 50 Leakage (pA) ID, IS (pA) 14 On-Resistance vs. VD and Dual Supply Voltage R DS(on) - Drain-Source On-Resistance () R DS(on) - Drain-Source On-Resistance (Ω) 8 VD - Drain Voltage (V) VD - Drain Voltage (V) 0 IS(off) - 50 100 ID(on) ID(off) 10 - 100 - 150 - 200 - 15 - 10 -5 0 5 10 VD or V S - Drain or Source Voltage (V) Leakage vs. Analog Voltage S13-2513-Rev. D, 09-Dec-13 15 1 - 80 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Leakage vs. Current Document Number: 72552 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 200 100 m V ± = ± 15 V 175 1m 150 I+ 100 µ Time (ns) I+ - Supply Current (nA) 10 m 10 µ 1µ I- tTRANS 125 100 tON(en) 100 n 75 tOFF(en) 10 n 50 1n 25 100 p 10 100 1K 10 K 100 K 1M 10 M ±5 ± 10 Input Switching Frequency (Hz) ± 15 ± 20 Supply Voltage (V) Supply Current vs. Input Switching Frequency Switching Time vs. Bipolar Supplies 3.0 300 275 2.5 VT - Switching Threshold (V) 250 225 Time (ns) 200 tTRANS 175 150 125 tOFF(en) tON(en) 100 75 2.0 1.5 1.0 0.5 50 0.0 25 5 10 15 5 20 10 Supply Voltage (V) 15 20 25 30 V+ - Supply Voltage (V) Switching Time vs. Single Supplies Switching Threshold vs. Supply Voltage 35 10 30 C = 1 nF 25 - 10 Q - Charge Injection (pC) Loss, OIRR, X TALK (dB) 20 Loss - 30 - 50 OIRR - 70 XTALK V+ = 15 V V - = - 15 V RL = 50 Ω - 90 1M 10 M Frequency (Hz) 100 M V=5V 5 0 V+ = 12 V -5 - 10 - 15 - 20 V = 15 V - 30 1G Insertion Loss, Off -Isolation Crosstalk vs. Frequency S13-2513-Rev. D, 09-Dec-13 10 - 25 - 110 100 k 15 - 35 - 15 - 12 -9 -6 -3 0 3 6 9 12 15 VS - Analog Voltage (V) Charge Injection vs. Analog Voltage Document Number: 72552 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 200 175 Time (ns) 150 tTRANS V = ± 15 V 125 100 tON V = ± 15 V 75 tOFF V = ± 15 V 50 25 - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Switching Time vs. Temperature SCHEMATIC DIAGRAM (Typical Channel) V+ GND VREF D A0 V+ Level Shift AX Decode/ Drive V- S1 V+ EN Sn V- Fig. 1 S13-2513-Rev. D, 09-Dec-13 Document Number: 72552 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix TEST CIRCUITS + 15 V + 2.4 V V+ EN A2 A1 ± 10 V S1 A3 S2 - S15 DG406B S16 A0 ± 10 V GND Logic Input VO D V- tr < 5 ns tf < 5 ns 3V 50 % 0V 50 Ω 35 pF 300 Ω - 15 V VS1 90 % Switch Output + 15 V + 2.4 V V+ EN A2 VO S1b 0V 90 % 10 V VS8 * DG407B S8b A1 A0 tTRANS 10 V S1 ON Db GND tTRANS S8 ON VO V- 50 Ω 35 pF 300 Ω - 15 V * = S1a – S 8a, S2b - S7b, Da Fig. 2 - Transition Time + 15 V V+ A3 S1 A2 A1 A0 -5V S2 - S16 DG406B EN VO D GND V300 Ω 50 Ω Logic Input 35 pF - 15 V tr < 5 ns tf < 5 ns 3V 50 % 0V tON(EN) 0V + 15 V V+ A2 S1b S1a - S8a S2b - S8b A1 A0 tOFF(EN) Switch Output - 5V VO 90 % 90 % VO DG407B Da and Db EN GND VO V- 50 Ω 35 pF 300 Ω - 15 V Fig. 3 - Enable Switching Time S13-2513-Rev. D, 09-Dec-13 Document Number: 72552 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG406B, DG407B www.vishay.com Vishay Siliconix TEST CIRCUITS + 15 V Logic Input V+ EN + 2.4 V All S and Da A3 A2 A1 +5V tr < 5 ns tf < 5 ns 3V 50 % 0V DG406B DG407B A0 GND 50 Ω VS VO D,D b 80 % Switch Output V300 Ω 35 pF VO - 15 V 0V tOPEN Fig. 4 - Break-Before-Make Interval Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72552. S13-2513-Rev. D, 09-Dec-13 Document Number: 72552 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PDIP: 28ĆLEAD 28 27 26 25 24 23 22 21 20 19 18 17 16 15 E1 1 2 3 4 5 6 7 8 9 10 11 12 13 E 14 D Q1 S A(1) A L A1 L 15° MAX. C e1 B1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S eA B MILLIMETERS Min Max INCHES Min Max 2.29 5.08 0.090 0.200 0.39 1.77 0.015 0.070 0.38 0.56 0.015 0.022 0.89 1.65 0.035 0.065 0.204 0.30 0.008 0.012 35.10 39.70 1.380 1.565 15.24 15.88 0.600 0.625 13.21 14.73 0.520 0.580 2.29 2.79 0.090 0.110 14.99 15.49 0.590 0.610 2.60 5.08 0.100 0.200 0.95 2.345 0.0375 0.0925 0.995 2.665 0.0375 0.105 ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5488 Document Number: 71243 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix PLCC: 28-LEAD D-SQUARE MILLIMETERS MIN. MAX. A 4.20 4.57 2.29 3.04 A1 0.51 A2 B 0.331 0.553 0.661 0.812 B1 D 12.32 12.57 11.430 11.582 D1 9.91 10.92 D2 1.27 BSC e1 ECN: T09-0766-Rev. D, 28-Sep-09 DWG: 5491 DIM. A2 INCHES MIN. MAX. 0.165 0.180 0.090 0.120 0.020 0.013 0.021 0.026 0.032 0.485 0.495 0.450 0.456 0.390 0.430 0.050 BSC e1 B1 D2 B D1-SQUARE A1 D A Document Number: 71264 28-Sep-09 0.101 mm 0.004" www.vishay.com 1 Package Information www.vishay.com Vishay Siliconix SOIC (WIDE-BODY): 28-LEADS 0.06 0.002D CAVITY NO. 0.3525 0.001 0.334 0.005 28 27 26 25 24 23 22 21 20 19 18 R0.004 17 16 15 0.010 0.1475 0.001 R0.008 0.295 0.001 R0.009 1 2 3 4 5 6 7 8 9 10 11 12 13 14 4° R0.004 2° 0.032 0.005 0.070 0.005 0.055 0.005 DETAIL A PIN 1 INDICATOR 0.047 0.007 0.001 dp SURFACE POLISHED 0.334 0.005 0.291 0.001 0.091 0.001 0.020 45° 0.705 0.001 0.098 0.002 R0.004 0.00825 ± 0.00325 0.041 0.001 0.050 TYP. 0.017 0.0003 7°(4 ) 0.295 0.001 0.406 0.004 DETAIL A All Dimensions In Inches ECN: E11-2209-Rev. D, 01-Aug-11 DWG: 5850 Revision: 01-Aug-11 1 Document Number: 71268 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix 28ĆLEAD LCC A1 D L1 A 28 e 1 2 L Document Number: 71278 02-Jul-01 E Dim A A1 B D E e L L1 MILLIMETERS Min Max INCHES Min Max 1.37 2.24 0.054 0.088 1.63 2.54 0.064 0.100 0.56 0.71 0.022 0.028 11.23 11.63 0.442 0.458 11.23 11.63 0.442 0.458 1.27 BSC 0.050 BSC 1.14 1.40 0.045 0.055 1.96 2.36 0.077 0.093 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5319 B www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 28ĆLEAD 28 E1 E 1 2 3 D Q1 S A L1 A1 B1 L e1 C B eA MILLIMETERS Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S ∝ INCHES Min Max Min Max 4.06 5.92 0.160 0.232 0.38 1.52 0.015 0.060 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 36.58 37.08 1.440 1.460 15.24 15.88 0.600 0.625 12.95 13.46 0.510 0.530 2.54 BSC ∝ 0.100 BSC 15.24 BSC 0.600 BSC 3.18 3.81 0.125 0.150 3.81 5.08 0.150 0.200 1.27 2.16 0.050 0.085 1.52 2.29 0.060 0.090 0° 15° 0° 15° ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5434 Document Number: 71283 03-Jul-01 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000