DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG1411, DG1412, DG1413 are ± 15 V precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the Vishay Siliconix DG1411, DG1412, and DG1413 offer low on-resistance of 1.5 . The low and flat resistance over the full signal range ensures excellent linearity and low signal distortion. The new CMOS platform provides low power dissipation, minimized parasitic capacitance, and low charge injection. • • • • • • • • • • • The devices operate from either a single 4.5 V to 24 V power supply, or from dual ± 4.5 V to ± 15 V power supplies. The analog switches don't require a VL logic supply, while all digital inputs have 0.8 V and 2 V logic thresholds to ensure low-voltage TTL / CMOS compatibility. The DG1411, DG1412, and DG1413 are bi-directional and support analog signals up to the supply voltage when on, and block them when off. The devices each feature four independently selectable SPST switches. The DG1411 is normally closed, while the DG1412 is normally open. The DG1413 has two normally open and two normally closed switches with guaranteed break-before-make operation. Combined with fast 100 ns switching times, the improved performance of the DG1411, DG1412, and DG1413 make the devices ideal for signal switching and relay replacement in data acquisition, industrial control and automation, communication, and A/V systems, in addition to medical instrumentation and automated test equipment. The switches are available in RoHS-compliant, halogen-free TSSOP16 and QFN16 4 mm by 4 mm packages. 35 V supply max. rating On-resistance: 1.5 On-resistance flatness: 0.3 Channel to channel ON-resistance match: 0.1 Supports single and dual supply operation Fully specified at ± 15 V, ± 5 V, and +12 V Integrated VL supply 3 V logic compatible Low parasitic capacitance: CS(OFF): 11 pF, CD(ON): 87 pF Rail to rail signal handling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • • • • Low insertion loss Low distortion Break-before-make switching Low charge injection over the full signal range APPLICATIONS • • • • • • • • • Medical and Healthcare equipment Data acquisition system Industrial control and automation Test and measurement equipment Communication systems Battery powered systems Sample and hold circuits Audio and video signal switching Relay replacement D1 IN1 IN2 D2 FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG1411 16 15 14 13 DG1411EN QFN-16 (4 mm x 4 mm) S1 1 12 S2 V- 2 11 V+ GND 3 10 N.C. 9 S3 Top View 5 6 7 8 IN4 IN3 D3 4 D4 S4 TRUTH TABLE - DG1411 LOGIC SWITCH 0 On 1 Off S13-2467-Rev. B, 02-Dec-13 DG1411EQ TSSOP IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ Top View GND 5 12 N.C. S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Notes • QFN EXPOSED PAD TIED TO V• N.C. = NO CONNECT • Switches Shown for Logic “0” Input Document Number: 62749 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix D1 IN1 IN2 D2 FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG1412 16 15 14 13 DG1412EN QFN-16 (4 mm x 4 mm) S1 1 12 S2 V- 2 11 V+ GND 3 10 N.C. Top View S4 4 5 6 7 8 D4 IN4 IN3 D3 9 S3 TRUTH TABLE - DG1412 LOGIC SWITCH 0 Off 1 On DG1412EQ TSSOP IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 N.C. S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Notes • QFN EXPOSED PAD TIED TO V• N.C. = NO CONNECT • Switches Shown for Logic “0” Input S1 1 V- 2 D1 IN1 IN2 D2 FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG1413 16 15 14 13 DG1413EN QFN-16 (4 mm x 4 mm) 12 S2 11 V+ 3 10 N.C. 4 9 S3 5 6 7 8 IN3 D3 S4 IN4 GND D4 Top View TRUTH TABLE - DG1413 LOGIC SWITCHES 1, 4 0 Off On 1 On Off S13-2467-Rev. B, 02-Dec-13 SWITCHES 2, 3 DG1413EQ TSSOP IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 13 V+ 12 N.C. V- 4 GND 5 S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Notes • QFN EXPOSED PAD TIED TO V• N.C. = NO CONNECT • Switches Shown for Logic “0” Input Document Number: 62749 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix DEVICE OPTIONS PART NUMBER SWITCH FUNCTION CONFIGURATION TEMPERATURE RANGE PACKAGE DG1411EN-T1-GE4 Quad SPST NC -40 °C to +125 °C QFN (4 mm x 4 mm) 16L (Variation 2) DG1412EN-T1-GE4 Quad SPST NO -40 °C to +125 °C QFN (4 mm x 4 mm) 16L (Variation 2) DG1413EN-T1-GE4 Quad SPST NC/NO -40 °C to +125 °C QFN (4 mm x 4 mm) 16L (Variation 2) DG1411EQ-T1-GE3 Quad SPST NC -40 °C to +125 °C TSSOP-16 DG1412EQ-T1-GE3 Quad SPST NO -40 °C to +125 °C TSSOP-16 DG1413EQ-T1-GE3 Quad SPST NC/NO -40 °C to +125 °C TSSOP-16 ABSOLUTE MAXIMUM RATINGS ELECTRICAL PARAMETER V+ CONDITIONS Reference to GND LIMITS -0.3 V to +25 V V- Reference to GND +0.3 V to -25 V V+ to V- +35 Analog Inputs (S or D) Maximum Pulse Switch Current Thermal Resistance V V- (-0.3 V) to V+ (+0.3 V) Digital Inputs Maximum Continuous Switch Current UNIT GND (-0.3 V) to V+ (+0.3 V) TSSOP-16, TA = 25 °C 190 QFN (4 mm x 4 mm) 16L, TA = 25 °C 250 TSSOP-16, TA = 125 °C 90 QFN (4 mm x 4 mm) 16L, TA = 125 °C 100 Pulse at 1 mS, 10 % duty cycle 500 TSSOP-16 130 QFN (4 mm x 4 mm) 16L 32 mA °C/W Temperature Operating Temperature -40 to 125 Max. Operating Junction Temperature 150 Operating Junction Temperature 125 Storage Temperature °C -65 to 150 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE ELECTRICAL IN S13-2467-Rev. B, 02-Dec-13 MINIMUM ± 4.5 MAXIMUM ± 16.5 UNIT V Document Number: 62749 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 15 V, V- = -15 V VINH = 2 V, VINL = 0.8 V +25 °C -40 °C to +85 °C -40 °C to +125 °C TYP./MAX. UNIT Analog Switch Analog Signal Range VANALOG V- to V+ Drain-Source On-Resistance RDS(on) VS = ± 10 V, IS = -10 mA; see fig. 23 V+ = +13.5 V, V- = -13.5 V ON-Resistance Flatness Rflat(on) VS = ± 10 V, IS = -10 mA ON-Resistance Matching Switch Off Leakage Current Channel On Leakage Current RDS(on) IS/Id(off) V+ = +16.5 V, V- = -16.5 V VS = ± 10 V, VD = ± 10 V; see fig. 24 Id(on) VS = VD = ± 10 V; see fig. 25 - V 1.5 - - Typ. 1.8 2.3 2.6 Max. 0.3 - - - 0.36 0.45 0.48 Max. 0.08 - - Typ. Max. 0.18 0.19 0.21 ± 0.03 - - Typ. ± 0.55 ±2 ± 12.5 Max. ± 0.15 - - Typ. ±2 ±4 ± 35 Max. nA Digital Control Input, High Voltage VINH - - 2 Vmin. Input, Low Voltage VINL - - 0.8 Vmax. Input Leakage IIN Digital Input Capacitance CIN VIN = VGND or V+ 0.005 - - Typ. - - ± 0.1 Max. 3.5 - - Typ. V μA pF Dynamic Characteristics Break-Before-Make Time Turn-On Time tOPEN tON VS1= VS2 = 10 V, see fig. 31; RL= 300 , CL = 35 pF VS = 10 V, see fig. 30 RL = 300 , CL = 35 pF 36 - - Typ. - - 10 Min. 100 - - Typ. 150 170 190 Max. 64 - - Typ. 120 140 160 Max. -20 - - Typ. Turn-Off Time tOFF Charge Injection QINj CL = 1 nF, RGEN = 0 , VS = 0 V see fig. 32 Off Isolation OIRR CL = 5 pF, RL = 50 , 100 kHz -80 - - Typ. Cross Talk XTALK CL = 5 pF, RL = 50 , 1 MHz -100 - - Typ. f = 1 MHz, RL = 50 , CL = 5 pF -0.08 - Insertion Loss ns pC dB Typ. Total Harmonic Distortion THD RL = 110 , 15 Vp-p, f = 20 Hz to 20 kHz 0.014 - - Typ. % Bandwidth, -3dB BW CL = 5 pF, RL = 50 210 - - Typ. MHz 11 - - Typ. 24 - - Typ. 87 - - Typ. Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Drain On Capacitance CD(on) f = 1 MHz, VS = 0 V pF Power Requirements Power Supply Range GND = 0 V Digital Inputs 0 or V+ V+ = +16.5 V, V- = -16.5 V I+ Power Supply Current IN1 = IN2 = IN3 = IN4 = 5 V I- S13-2467-Rev. B, 02-Dec-13 Digital Inputs 0 or V+ ± 4.5/± 16.5 min./max. V 0.001 - - Typ. - - 1 Max. 220 - - Typ. - - 380 Max. 0.001 - - Typ. - - 1 Max. μA Document Number: 62749 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix ELECTRICAL CHARACTERISTICS - SINGLE 12 V SUPPLY PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V VINH = 2 V, VINL = 0.8 V +25 °C -40 °C to +85 °C -40 °C to +125 °C TYP./MAX. UNIT Analog Switch Analog Signal Range VANALOG 0 V to V+ Drain-Source On-Resistance RDS(on) VS = 0 V to 10 V, IS = -10 mA; see fig. 23, V+ = 10.8 V, V- = 0 V ON-Resistance Flatness Rflat(on) VS = 0 V to 10 V, IS = -10 mA ON-Resistance Matching Switch Off Leakage Current Channel On Leakage Current Ron IS/Id(off) V+ = 10.8 V, V- = 0 V VS = 1 V/10 V, VD = 10 V/0 V see fig. 24 Id(on) VS = VD = 1 V/10 V; see fig. 25 V 2.8 - - Typ. 3.5 4.3 4.8 Max. 0.6 - - Typ. 1.1 1.2 1.3 Max. 0.08 - - Typ. 0.21 0.23 0.25 Max. ± 0.02 - - Typ. ± 0.55 ±2 ± 12.5 Max. ± 0.15 - - Typ. ± 1.5 ±4 ± 30 Max. nA Digital Control Input, High Voltage VINH - - 2 Min. Input, Low Voltage VINL - - 0.8 Max. 0.001 - - Typ. - - ± 0.1 Max. 3.5 - - Typ. 130 - - Typ. - - 40 Min. 210 - - Typ. 250 320 360 Max. 80 - - Typ. 135 165 190 Max. 14 - - Typ. Input Leakage IIN Digital Input Capacitance CIN VIN = VGND or V+ V μA pF Dynamic Characteristics Break-Before-Make Time Turn-On Time Turn-Off Time Charge Injection tOPEN tON tOFF QINj Off Isolation OIRR Cross Talk XTALK Insertion Loss Bandwidth, -3dB BW Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Drain On Capacitance CD(on) VS1 = VS2 = 8 V; see fig. 31, RL = 300 , CL = 35 pF VS = 8 V; see fig. 30, RL = 300 , CL = 35 pF CL = 1 nF, RGEN = 0 , VS = 6 V see fig. 32 100 kHz -80 - - Typ. 1 MHz -100 - - Typ. f = 1 MHz, RL = 50 , CL = 5 pF -0.16 - - Typ. RL = 50 , CL = 5 pF 200 - - Typ. 17 - - Typ. f = 1 MHz, VS = 6 V 30 - - Typ. 94 - - Typ. RL = 50 , CL = 5 pF ns pC dB MHz pF Power Requirements Power Supply Range GND = 0 V, V- = 0 V Digital Inputs 0 or V+ V+ = 13.2 V Power Supply Current I+ IN1 = IN2 = IN3 = IN4 = 5 V S13-2467-Rev. B, 02-Dec-13 ± 5/± 16.5 min./max. V 0.001 - - Typ. - - 1 Max. 220 - - Typ. - - 380 Max. μA Document Number: 62749 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix ELECTRICAL CHARACTERISTICS - DUAL ± 5 V SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = -5 V VINH = 2 V, VINL = 0.8 V +25 °C -40 °C to +85 °C -40 °C to +125 °C TYP./MAX. UNIT Analog Switch Analog Signal Range Drain-Source On-Resistance VANALOG RDS(on) ON-Resistance Flatness Rflat(on) ON-Resistance Matching Ron Switch Off Leakage Current Channel On Leakage Current IS/Id(off) Id(on) 0 to V+ VS = ± 4.5 V, IS = -10 mA; see fig. 23, V+ = +4.5 V, V- = -4.5 V VS = ± 4.5 V, IS = -10 mA V+ = +5.5 V, V-= -5.5 V, VS = +/- 4.5 V, VD = -/+ 4.5 V; see fig. 24 VS = VD = ± 4.5 V; see fig. 25 V 3.3 - - Typ. 4 4.9 5.4 Max. 0.9 - - Typ. 1.1 1.24 1.31 Max. 0.08 - - Typ. 0.22 0.23 0.25 Max. ± 0.03 - - Typ. ± 0.55 ±2 ± 12.5 Max. ± 0.05 - - Typ. ±1 ±4 ± 30 Max. nA Digital Control Input, High Voltage VINH - - 2 Min. Input, Low Voltage VINL - - 0.8 Max. 0.001 - - Typ. - - ± 0.1 Max. 3.5 - - Typ. Typ. Input Leakage IIN Digital Input Capacitance CIN VIN = VGND or V+ V μA pF Dynamic Characteristics Break-Before-Make Time Turn-On Time tOPEN tON Turn-Off Time tOFF Charge Injection QINj Off Isolation OIRR Cross Talk XTALK Insertion Loss Bandwidth, -3dB BW Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Drain On Capacitance CD(on) VS1 = VS2 = 3 V; see fig. 31, RL = 300 , CL = 35 pF VS = 3 V; see fig. 30, RL = 300 , CL = 35 pF 150 - - - - 50 Min. 300 - - Typ. 400 465 510 Max. 150 - - Typ. 290 320 380 Max. 22 - - Typ. 100 KHz -80 - - Typ. 1 MHz -100 - - Typ. f = 1 MHz, RL = 50 , CL = 5 pF -0.19 - - Typ. RL = 50 , CL = 5 pF 200 - - Typ. 18 - - Typ. 31 - - Typ. 95 - - Typ. CL = 1 nF, RGEN = 0 , VS = 0 V; see fig. 32 RL = 50 , CL = 5 pF f = 1 MHz, VS = 0 V ns pC dB MHz pF Power Requirements Power Supply Range GND = 0 V I+ Digital Inputs 0 V or V+ V+ = +5.5 V, V- = -5.5 V Power Supply Current I- S13-2467-Rev. B, 02-Dec-13 Digital Inputs = 0 V or V+ ± 4.5 V/± 16.5 min./max. 0.001 V - - Typ. - - 1 Max. 0.001 - - Typ. - - 1 Max. μA Document Number: 62749 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3.0 4.0 2.5 V+ = +10V V+ = +4.5V V+ = +5V V- = -4.5V V- = -5V 3.5 V+ = +12V V- = -12V RON - On-Resistance (Ω) RON - On-Resistance (Ω) 3.0 2.0 1.5 V+ = +13.5V V- = -13.5V 1.0 0.5 V+ = +15V V- = -15V V+ = +16.5V V- = -16.5V TA = +25 °C IS = -10mA 2.5 2.0 V+ = +5.5V V- = -5.5V 1.5 TA = +25°C IS = -10mA 0.5 0.0 0.0 -16.5 -12.5 -8.5 -4.5 -0.5 3.5 7.5 11.5 -7 -6 -5 -4 -3 -2 -1 15.5 7 6 3 4 5 6 7 + 125 °C 2.5 5 4 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 2 3.0 V+ = 5V V+ = 10.8V V+ = 8V V+ = 12V 3 2 1 V+ = 13.2V TA = +25 °C IS = -10mA 2.0 + 85 °C 1.5 + 25 °C 1.0 - 40 °C 0.5 V+ = 15V V+ = +15V V- = -15V IS = -10mA 0.0 0 0 2 4 6 8 10 12 -15 14 -10 -5 0 5 10 15 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Temperature (± 15 V) On-Resistance vs. Analog Voltage (DSS) 4.5 5.0 4.5 + 125 °C 4.0 + 85 °C 4.0 + 125 °C + 85 °C RON - On-Resistance (Ω) 3.5 3.5 3.0 + 25 °C 2.5 2.0 1.5 0.5 1 On-Resistance vs. Analog Voltage (DS2) On-Resistance vs. Analog Voltage (DS1) 1.0 0 VD - Analog Voltage (V) VD - Analog Voltage (V) RON - On-Resistance (Ω) V+ = +7V V- = -7V 1.0 - 40 °C V+ = +5V V- = -5V 3.0 + 25 °C 2.5 2.0 1.5 - 40 °C 1.0 V+ = +12V V- = 0V 0.5 IS = -10mA IS = -10mA 0.0 0.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 VD - Analog Voltage (V) On-Resistance vs. Temperature (± 5 V) S13-2467-Rev. B, 02-Dec-13 5.0 0 1 2 3 4 5 6 7 8 9 10 11 12 VD - Analog Voltage (V) On-Resistance vs. Temperature (+12 V) Document Number: 62749 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 10 ID(OFF), VD= +4.5V ID(OFF), VD=+10V 5 5 IS(OFF), VS= -4.5V Leakage Current (nA) Leakage Current (nA) IS(OFF), VS= -10V 0 ID(OFF), VD= -10V -5 IS(OFF), VS= +10V -10 ID(ON), VD= +10V -15 V+= + 15 V V- = - 15 V -20 ID(OFF), VD= -4.5V 0 -5 IS(OFF), VS= +4.5V -10 ID(ON), VD= +4.5V -15 ID(ON), VD= -4.5V -20 ID(ON), VD= -10V -25 -25 20 40 60 80 100 120 20 40 Temperature (°C) 100 120 Leakage Current vs. Temperature (± 5 V) 10 200 ID(OFF), VD= +10V 5 180 TA = + 25 °C I+ per Logic Input IS(OFF), VS= +1V 160 ID(OFF), VD= +1V I+ - Supply Current (μA) 0 IS(OFF), VS= +10V -5 -10 ID(ON), VD= +10V -15 ID(ON), VD= +1V -20 140 120 V+ = +5.5V V- = -5.5V 100 80 V+ = +13.2V V- = 0V 60 V+ = +16.5V V- = -16.5V 40 20 0 -25 20 40 60 80 100 0 120 2 4 6 8 10 12 14 16 VIN - (V) Temperature (°C) Supply Current vs. Logic Level Leakage Current vs. Temperature (+12 V) 140.0 400 120.0 tON(EN), tOFF(EN) - Switching Time (ns) V+ = +15 V V- = -15 V 100.0 QINJ - Charge Injection (pC) 80 Temperature (°C) Leakage Current vs. Temperature (± 15 V) Leakage Current (nA) 60 80.0 60.0 V+ = + 5 V V- = - 5 V 40.0 20.0 0.0 V+ = +12 V V- = GND - 20.0 - 40.0 - 60.0 - 80.0 350 V+ = +12 V, V- = 0 V, tON 300 250 V+ = +15 V, V- = -15 V, tON 200 150 100 50 V+ = +12 V, V- = 0V, tOFF V+ = +15 V, V- = -15 V, tOFF 0 -15 -10 -5 0 5 10 15 - 40 - 20 0 20 40 60 80 100 VS - Analog Voltage (V) Temperature (°C) Charge Injection vs. Analog Voltage Switching Time vs. Temperature S13-2467-Rev. B, 02-Dec-13 120 Document Number: 62749 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.6 10 Loss 0 TA = +25 °C V+ = +15V V- = -15V - 20 - 30 VT - Logic Threshold (V) Loss, OIRR, XTALK (dB) - 10 OIRR - 40 - 50 - 60 XTALK - 70 VIH 1.4 1.2 VIL - 80 - 90 - 100 1.0 - 110 100K 1M 10M 100M 4 1G 5 6 7 Frequency (Hz) 10 11 12 13 14 15 16 17 Logic Threshold vs. Supply Voltage 1000 10 000 V+ = +5.5V V- = -5.5V TA = + 25 °C 100 I+ V+ = +16.5 V V- = -16.5 V TA = + 25 °C 1000 I+ 100 Supply Current (μA) 10 Supply Current (μA) 9 V+ - Supply Voltage (V) BW, OIRR, XTALK vs. Frequency 1 0.1 IIGND 0.01 IGND 10 1 0.1 0.001 0.01 0.0001 0.001 0.00001 I- 0.0001 10 1000 100 000 10 000 000 10 Input Switching Frequency (Hz) 0.03 0.028 0.026 0.024 0.022 0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 0.004 0.002 0 1000 100 000 10 000 000 Input Switching Frequency (Hz) Supply Current vs. Switching Frequency (± 16.5 V) Supply Current vs. Switching Frequency (± 5.5 V) 0.1 V+ = + 5 V V- = - 5 V V+ = + 15 V V- = - 15 V Vs=10V P-P THD + N (%) THD + N (%) 8 Vs=20V P-P Vs=15V P-P Vs=5V P-P 0.01 Vs=2.5V P-P Vs=10V P-P 0.001 10 100 1000 10 000 100 000 10 100 1000 10 000 Frequency (Hz) Frequency (Hz) THD vs. Frequency (± 15 V) THD vs. Frequency (± 5 V) S13-2467-Rev. B, 02-Dec-13 100 000 Document Number: 62749 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input VINL V+ S Switch Input tr < 5 ns tf < 5 ns 50 % Switch Output D VOUT 0.9 x VOUT IN Logic Input RL 300 Ω GND CL 35 pF Switch Output 0V tOFF tON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT = V D RL R L + R ON Fig. 1 - Switching Time V+ VOUT V+ Rgen D VOUT S VOUT + IN Vgen IN CL = 1 nF On On Off GND Q= VOUT x CL VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. Fig. 2 - Charge Injection V+ V+ 10 nF 10 nF V+ V+ S IN 0 V, 2.4 V D Meter D IN 0 V, 2.4 V RL GND S HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer Off Isolation = 20 log Fig. 3 - Off-Isolation VD VS Fig. 4 - Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62749. S13-2467-Rev. B, 02-Dec-13 Document Number: 62749 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix QFN 4x4-16L Case Outline (5) (4) VARIATION 1 MILLIMETERS(1) DIM VARIATION 2 MILLIMETERS(1) INCHES INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.85 0.95 0.029 0.033 0.037 0.75 0.85 0.95 0.029 0.033 0.037 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 0.35 0.010 0.014 0.25 0.35 0.010 2.2 0.079 0.087 2.5 2.7 0.098 A3 b 0.20 ref. 0.25 D D2 0.30 0.008 ref. 4.00 BSC 2.0 2.1 0.012 0.20 ref. 0.157 BSC 0.083 0.30 4.00 BSC 2.6 e 0.65 BSC 0.026 BSC 0.65 BSC E 4.00 BSC 0.157 BSC 4.00 BSC E2 2.0 K L 2.1 2.2 0.079 0.20 min. 0.5 0.6 0.083 0.087 2.5 0.008 min. 0.7 0.020 0.024 0.008 ref. 2.6 0.3 0.4 0.014 0.157 BSC 0.102 0.106 0.026 BSC 0.157 BSC 2.7 0.098 0.20 min. 0.028 0.012 0.102 0.106 0.008 min. 0.5 0.012 0.016 N(3) 16 16 16 16 Nd(3) 4 4 4 4 Ne(3) 4 4 4 4 0.020 Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: S13-0893-Rev. B, 22-Apr-13 DWG: 5890 Revision: 22-Apr-13 Document Number: 71921 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000