DG441LE, DG442LE Datasheet

DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
16 , Low Charge Injection and Leakage,
+12 V / +5 V / +3 V / ± 5 V Quad SPST Switches
DESCRIPTION
FEATURES
The
DG441LE,
DG442LE
monolithic
quad
single-pole-single-throw analog switches are designed to
provide high speed, low error switching of analog signals.
The DG441LE has a normally closed function. The DG442LE
has a normally open function.
• 3 V to 16 V single supply or ± 3 V to ± 8 V dual
supply
Available
• On-resistance RDS(on): 16 
• Fast switching tON: 18 ns,typ.
Available
• Low parasitic capacitance:
CD(ON): 15 pF
CS(OFF): 5 pF
Available
• Less than 8 pC charge injection over the full
signal swing range
• Low leakage: < 10 pA, typ.
• TTL, CMOS compatible
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
The DG441LE, DG442LE feature low charge injection of a
few picocoulombs over the full analog switch range.
Combining low on resistance (16 , typ.), low parasitic
capacitance (CD(ON) 15 pF), and fast switching speed
(tON, 18 ns, typ.), the devices are ideal for data acquisition,
sample-and-hold, and ADC input circuit designs.
The DG441LE, DG442LE operate on single and dual
supplies. Single supply voltage ranges from 3 V to 16 V while
dual supply operation is recommended with ± 3 V to ± 8 V.
Each switch conducts equally well in both direction when
on, and blocks input voltages up to the supply levels when
off.
The DG441LE, DG442LE are available in 16 lead TSSOP,
SOIC, and PDIP packages.
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
BENEFITS
•
•
•
•
Wide operation voltage range
Low signal errors and distortion
Fast switching time
Minimized switching glitch
APPLICATIONS
•
•
•
•
•
•
•
•
•
Automatic test equipment
Process control and automation
Data acquisition systems
Meters and instruments
Medical and healthcare systems
Communication systems
Audio and video signal routing
Relay replacement
Battery powered systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION


Dual-In-Line, TSSOP and SOIC
IN1
1
16
IN2
D1
2
15
D2
TRUTH TABLE
S1
3
14
S2
V-
4
13
V+
GND
5
12
NC
DG441LE / 442LE
LOGIC
DG441LE
DG442LE
0
On
Off
1
Off
On
Logic “0”  0.8 V
Logic “1”  2.4 V
Top View
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
OODERING INFORMATION
TEMP. RANGE
CONFIGURATION
PACKAGE
16-pin TSSOP
DG441LE
16-pin SOIC
16-pin PDIP
-40 °C to +85 °C
Lead (Pb)-free
16-pin TSSOP
DG442LE
16-pin SOIC
16-pin PDIP
PART NUMBER
MIN. ORDER / PACK. QUANTITY
DG441LEDQ-GE3
Tube 360 units
DG441LEDQ-T1-GE3
Tape and reel, 3000 units
DG441LEDY-GE3
Tube 500 units
DG441LEDY-T1-GE3
Tape and reel, 2500 units
DG441LEDJ-GE3
Tube 500 units
DG442LEDQ-GE3
Tube 360 units
DG442LEDQ-T1-GE3
Tape and reel, 3000 units
DG442LEDY-GE3
Tube 500 units
DG442LEDY-T1-GE3
Tape and reel, 2500 units
DG442LEDJ-GE3
Tube 500 units
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
V+ to V-
LIMIT
-0.3 to +18
GND to V-A
18
V
GND -0.3 to (V +) + 0.3
or 30 mA, whichever occurs first
Digital Inputs a VS, VD
Continuous Current (any terminal)
30
Current, S or D (pulsed 1 ms, 10 % duty cycle)
100
Storage Temperature
Power Dissipation (packages)
UNIT
b
(DQ, DY suffix)
-65 to +125
(AK suffix)
-65 to +150
16-pin TSSOP c
450
16-pin narrow body SOIC d
650
16-pin CerDIP e
900
mA
°C
mW
ESD Human Body Model (HBM); per ANSI / ESDA / JEDEC® JS-001
2500
V
Latch Up Current, per JESD78D
400
mA
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
SPECIFICATIONS
a
Vishay Siliconix
(single supply 12 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 V f
TEMP. b TYP. c
A SUFFIX
D SUFFIX
LIMITS
LIMITS
-55 °C to +125 °C -40 °C to +85 °C
MIN. d
MAX. d
UNIT
MIN. d MAX. d
Analog Switch
Analog Signal Range e
Drain-Source 
On-Resistance
VANALOG
RDS(on)
On-Resistance Match 
Between Channels e
RDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
Full
-
0
12
0
12
V+ = 10.8 V, V- = 0 V
IS = 10 mA, VD = 2 V / 9 V
Room
16
-
26
-
26
Full
-
-
40
-
35
IS = 10 mA, VD = 9 V
Room
0.1
-
0.5
-
0.5
VD = 1 V / 11 V,
VS = 11 V / 1 V
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
VIN under test = 0.8 V
Full
0.01
-1.5
1.5
-1
1
VIN under test = 2.4 V
Full
-
-1.5
1.5
-1
1
Room
18
-
60
-
60
Full
-
-
80
-
70
Room
18
-
35
-
35
Full
-
-
50
-
45
ID(on)
VS = VD = 11 V / 1 V
Input Current, VIN Low
IIL
Input Current, VIN High
IIH
Channel On Leakage Current
Room
V

nA
Digital Control
μA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
RL = 300 , CL = 35 pF
VS = 5 V, see figure 2
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
6.6
-
-
-
-
Off Isolation e
OIRR
Room
68.4
-
-
-
-
Channel-to-Channel Crosstalk e
XTALK
RL = 50 , CL = 5 pF,
f = 1 MHz
Room
114
-
-
-
-
Room
5
-
-
-
-
Room
6
-
-
-
-
Charge Injection
e
Source Off Capacitance e
CS(off)
Drain Off Capacitance e
CD(off)
Channel On Capacitance e
CD(on)
Room
15
-
-
-
-
Positive Supply Current
I+
Full
0.03
-
1.5
-
1
Negative Supply Current
I-
f = 1 MHz
ns
pC
dB
pF
Power Supplies
Ground Current
S16-0392-Rev. A, 07-Mar-16
IGND
VIN = 0 V or 12 V
Room
-
-1
-
-1
-
Full
0.002
-7.5
-
-5
-
Full
0.002
-1.5
-
-1
-
μA
Document Number: 76754
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
SPECIFICATIONS
a
PARAMETER
Vishay Siliconix
(dual supply ± 5 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, V- = -5 V
VIN = 2.4 V, 0.8 V f
TEMP. b
TYP. c
A SUFFIX
D SUFFIX
LIMITS
LIMITS
-55 °C to +125 °C -40 °C to +85 °C UNIT
MIN. d
MAX. d
MIN. d MAX. d
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
On-Resistance Match 
Between Channels e
Switch Off
Leakage Current g
VANALOG
Full
-
-5
5
-5
5
RDS(on)
V+ = 5 V, V- = -5 V
IS = 10 mA, VD = ± 3.5 V
Room
18
-
30
-
30
Full
-
-
42
-
37
RDS(on)
IS = 10 mA, VD = ± 3.5 V
Room
0.1
-
0.5
-
0.5
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
IS(off)
ID(off)
Channel On 
Leakage Current g
V+ = 5.5, V- = -5.5 V
VD = ± 4.5 V, VS = ± 4.5 V
ID(on)
V+ = 5.5 V, V- = -5.5 V
VS = VD = ± 4.5 V
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Input Current, VIN Low e
IIL
VIN under test = 0.8 V
Full
0.05
-1.5
1.5
-1
1
Input Current, VIN High e
IIH
VIN under test = 2.4 V
Full
0.05
-1.5
1.5
-1
1
Room
65
V

nA
Digital Control
μA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection e
tON
tOFF
Q
Off Isolation e
OIRR
Channel-to-Channel
Crosstalk e
XTALK
Source Off Capacitance e
CS(off)
Drain Off Capacitance e
CD(off)
Channel On Capacitance e
CD(on)
42
-
65
-
RL = 300 , CL = 35 pF
VS = ± 3.5 V, see figure 2
Full
-
-
90
-
75
Room
34
-
45
-
45
Full
-
-
65
-
55
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
5.8
-
-
-
-
Room
68.4
-
-
-
-
Room
113
-
-
-
-
Room
5
-
-
-
-
Room
6
-
-
-
-
Room
14
-
-
-
-
RL = 50 , CL = 5 pF, f = 1 MHz
f = 1 MHz
ns
pC
dB
pF
Power Supplies
Positive Supply Current e
Negative Supply Current e
Ground Current e
S16-0392-Rev. A, 07-Mar-16
I+
IIGND
VIN = 0 V or 5 V
Full
0.002
-
1.5
-
1
Room
-0.002
-1
-
-1
-
Full
-
-7.5
-
-5
-
Full
-0.002
-1.5
-
-1
-
μA
Document Number: 76754
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
SPECIFICATIONS
a
PARAMETER
Vishay Siliconix
(single supply ± 5 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, V- = 0 V
VIN = 2.4 V, 0.8 V f
TEMP. b
TYP. c
A SUFFIX
D SUFFIX
LIMITS
LIMITS
-55 °C to +125 °C -40 °C to +85 °C UNIT
MIN. d
MAX. d
MIN. d MAX. d
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance e
On-Resistance Match 
Between Channels e
VANALOG
Full
-
-
5
-
5
RDS(on)
V + = 4.5 V
IS = 5 mA, VD = 1 V, 3.5 V
Room
36
-
50
-
50
Full
-
-
88
-
75
RDS(on)
IS = 10 mA, VD = 3.5 V
Room
0.5
-
1
-
1
Room
53
-
70
-
70
V

Dynamic Characteristics
Turn-On Time e
Turn-Off Time e
Charge Injection e
tON
tOFF
Q
RL = 300 , CL = 35 pF
VS = 3.5 V, see figure 2
Hot
-
-
90
-
80
Room
34
-
50
-
50
Hot
-
-
70
-
60
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
3.3
-
-
-
-
ns
pC
Power Supplies
Positive Supply Current e
Negative Supply Current e
Ground Current e
S16-0392-Rev. A, 07-Mar-16
I+
IIGND
VIN = 0 V or 5 V
Full
10
-
200
-
100
Room
-0.002
-1
-
-1
-
Full
-
-7.5
-
-5
-
Full
-10
-200
-
-100
-
μA
Document Number: 76754
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
SPECIFICATIONS
a
PARAMETER
Vishay Siliconix
(single supply 3 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 3 V, V- = 0 V
VIN = 0.4 V f
TEMP. b
TYP. c
A SUFFIX
D SUFFIX
LIMITS
LIMITS
-55 °C to +125 °C -40 °C to +85 °C UNIT
MIN. d
MAX. d
MIN. d MAX. d
Analog Switch
Analog Signal Range e
Drain-Source 
On-Resistance
On-Resistance Match 
Between Channels e
Switch Off 
Leakage Current g
VANALOG
Full
-
0
3
0
3
RDS(on)
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5 V, 2.2 V
Room
106
-
130
-
130
Full
-
-
150
-
140
RDS(on)
IS = 5 mA, VD = 2.2 V
Room
1
-
3
-
3
IS(off)
ID(off)
Channel On 
Leakage Current g
V+ = 3.3, V- = 0 V
VD = 1 V, 2 V, VS = 2 V, 1 V
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
ID(on)
V+ = 3.3 V, V- = 0 V
VS = VD = 1 V, 2 V
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Input Current, VIN Low e
IIL
VIN under test = 0.4 V
Full
0.005
-1.5
1.5
-1
1
Input Current, VIN High e
IIH
VIN under test = 2.4 V
Full
0.005
-1.5
1.5
-1
1
Room
V

nA
Digital Control
μA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection e
Q
Off Isolation e
OIRR
Channel-to-Channel
Crosstalk e
XTALK
Source Off Capacitance e
CS(off)
Drain Off Capacitance e
CD(off)
Channel On Capacitance e
CD(on)
141
-
200
-
200
RL = 300 , CL = 35 pF
VS = 1.5 V, see figure 2
Full
-
-
220
-
210
Room
84
-
120
-
120
Full
-
-
140
-
130
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
2
-
-
-
-
Room
68
-
-
-
-
Room
107
-
-
-
-
Room
6
-
-
-
-
Room
7
-
-
-
-
Room
15
-
-
-
-
RL = 50 , CL = 5 pF, f = 1 MHz
f = 1 MHz
ns
pC
dB
pF
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35
30
30
+125 °C
+125 °C
RON - On-Resistance ()
RON - On-Resistance ()
25
+85 °C
20
15
10
+25 °C
5
25
20
15
10
-55 °C
-40 °C
+25 °C
5
V+ = +12 V
IS = 10 mA
0
-55 °C
-40 °C
V± = ± 5 V
IS = 10 mA
0
0
1
2
3
4
5
6
7
8
9
-5
10 11 12
-4
-3
-2
-1
0
1
2
3
4
VD - Analog Voltage (V)
VD - Analog Voltage (V)
RDS(on) vs. Analog Voltage and Temperature
RDS(on) vs. Drain Voltage and Temperature
90
5
24
V+ = +3 V
80
TA = 25 °C
IS = 10 mA
TA = 25 °C
IS = 10 mA
22
70
20
RON - On-Resistance (Ω)
RON - On-Resistance ()
+85 °C
60
50
V+ = +5 V
40
V+ = +12 V
30
V+ = +16 V
18
V± = ± 5 V
16
14
12
20
10
10
8
0
V± = ± 8 V
6
0
2
4
6
8
10
12
14
-8
16
-6
-4
-2
0
2
4
VD - Analog Voltage (V)
VD - Analog Voltage (V)
RDS(on) vs. Analog Voltage
RDS(on) vs. Analog Voltage
6
8
40
V+ = +5 V
30
ID(ON)
Leakage Current (pA)
20
10
0
-10
ID(OFF)
IS(OFF)
-20
-30
-40
-5
-4
-3
-2
-1
0
1
2
3
4
5
VD - Drain Voltage (V), VS = -VD
Leakage Current vs. Drain Voltage
(Dual Supply)
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
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Vishay Siliconix
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
120
110
100
Single Supply
Switching Speed (ns)
Switching Speed (ns)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
tON
Dual Supply
90
80
70
60
tON
50
40
tOFF
30
20
tOFF
10
0
2
4
6
8
10
12
14
16
3
4
6
7
8
Switching Time vs. Dual Supply
Switching Time vs. Single Supply
20
20
Single Supply
CD(ON), V+ = +3 V
16
Dual Supply
18
CD(ON), V+ = +5 V
14
12
CD(OFF), V+ = +3 V
CD(OFF), V+ = +5 V
CD(OFF), V+ = +12 V
10
8
CD(ON), V± = ± 5 V
16
CD(ON), V+ = +12 V
Capacitance (pF)
18
Capacitance (pF)
5
V+/- - Positive Supply Voltage (V)
V+ - Positive Supply Voltage (V)
14
12
10
6
CD(OFF), V± = ± 5 V
8
6
4
4
CS(OFF), V+ = +3 V
CS(OFF), V+ = +5 V
2
CS(OFF), V± = ± 5 V
2
CS(OFF), V+ = +12 V
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12
-5
-4
-3
-2
-1
0
1
2
3
4
5
Analog Voltage (V)
Analog Voltage (V)
Capacitance vs. Analog Voltage
(Dual Supply)
Capacitance vs. Analog Voltage
(Single Supply)
50
+125 °C
RON - On-Resistance (Ω)
45
+85 °C
40
35
30
25
20
-40 °C
+25 °C
V+ = +5 V
IS = 10 mA
15
-55 °C
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VD - Analog Voltage (V)
RDS(on) vs. Analog Voltage and Temperature
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
2.0
0
1.9
-10
1.8
1.6
Loss, OIRR, XTALK (dB)
VTH - Threshold (V)
1.7
VIL
1.5
Insertion Loss, -3dB = 301 MHz
-20
VIH
1.4
1.3
1.2
-30
V+ = +3 V
V- = 0 V
-40
-50
OIRR
-60
-70
XTALK
-80
-90
1.1
-100
1.0
-110
-120
100K
0.9
2
4
6
8
10
12
14
16
1M
V+ - Positive Supply Voltage (V)
Input Threshold vs. Single Supply Voltage
V+ = 12 V
90
V± = ± 5 V
7.0
6.0
5.0
V+ = 5 V
4.0
V+ = +5.5 V
V- = 0 V
IN = 0 V
80
3.0
2.0
I+ - Supply Current (nA)
QINJ - Charge Injection (pC)
1G
100
9.0
1.0
100M
Insertion Loss, Off Isolation and Crosstalk vs. Frequency
(Single Supply)
10.0
8.0
10M
Frequency (Hz)
70
60
50
40
30
20
V+ = 3 V
0
10
0
-5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12
VD - Analog Voltage (V)
Charge Injection vs. Analog Voltage
S16-0392-Rev. A, 07-Mar-16
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
Supply Current vs. Temperature
Document Number: 76754
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
SCHEMATIC DIAGRAM (typical channel)
V+
S
Level
Shift/
Drive
VIN
D
GND
V-
Fig. 1
TEST CIRCUITS
V+
Logic
Input
V+
IN
VO
RL
1 kΩ
3V
GND
tr < 20 ns
tf < 20 ns
50 % 50 %
0V
D
S
VS
3V
CL
35 pF
tOFF
Switch
Input
VS
Switch
Output
0V
VO
80 %
80 %
V-
VCL (includes fixture and stray capacitance)
Note:
tON
Logic input waveform is inverted for DG442.
Fig. 2 - Switching Time
V+
ΔV
O
Rg
VO
V+
S
D
IN
INX
OFF
ON
OFF
(DG441)
CL
1 nF
3V
GND
VO
VINX
OFF
ON
Q = ΔVO x CL
OFF
(DG442)
V-
Fig. 3 - Charge Injection
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
C = 1 µF tantalum in parallel with 0.01 µF ceramic
V+
C
V+
S1
VS
Rg = 50 Ω
D1
50 Ω
IN1
0 V, 2.4 V
NC
0 V, 2.4 V
S2
VO
D2
RL
IN2
GND
V-
C
VVS
XTA LK Isolation = 20 log
C = RF bypass
VO
Fig. 4 - Crosstalk
V+
C
V+
S
VS
VO
D
Rg = 50 Ω
0 V, 2.4 V
RL
IN
GND
V-
C
VOff Isolation = 20 log
VS
VO
Fig. 5 - Off Isolation
V+
C
S
V+
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
V-
C
V-
Fig. 6 - Source / Drain Capacitances
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
APPLICATIONS
+ 24 V
+ 12 V
RL
DG442L
V+
I = 3A
150 Ω
+ 12 V
VN0300L, M
+ 12 V
IN
VIN
10 kΩ
1/4 DG442L
S
+
+ 12 V
D
VOUT
-
CH
+
-
GND
VIN
0V
0 = Load Off
1 = Load On
Fig. 7 - Power MOSFET Driver
VIN
H = Sample
L = Hold
Fig. 8 - Open Loop Sample-and-Hold
+
-
VOUT
+ 12 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
GAIN1
AV = 1
R1
90 kΩ
GAIN2
A V = 10
R2
5 kΩ
With SW4 Closed
VOUT
=
R1 + R2 + R3 + R4
VIN
GAIN3
A V = 20
R3
4 kΩ
GAIN4
A V = 100
R4
1 kΩ
= 100
R4
DG441L or DG442L
V-
GND
V
Fig. 9 - Precision-Weighted Resistor Programmable-Gain Amplifier








Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76754.
S16-0392-Rev. A, 07-Mar-16
Document Number: 76754
12
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
www.vishay.com
1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
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Revision: 02-Oct-12
1
Document Number: 91000