DG540, DG541, DG542 Datasheet

DG540, DG541, DG542
Vishay Siliconix
Wideband/Video “T” Switches
DESCRIPTION
FEATURES
The DG540, DG541, DG542 are high performance
monolithic wideband/video switches designed for switching
RF, video and digital signals. By utilizing a "T" switch
configuration on each channel, these devices achieve
exceptionally low crosstalk and high off-isolation. The
crosstalk and off-isolation of the DG540 are further improved
by the introduction of extra GND pins between signal pins.
To achieve TTL compatibility, low channel capacitances and
fast switching times, the DG540 family is built on the Vishay
Siliconix proprietary D/CMOS process. Each switch
conducts equally well in both directions when on.
• Halogen-free according to IEC 61249-2-21
Definition
• Wide Bandwidth: 500 MHZ
• Low Crosstalk: - 85 dB
• High Off-Isolation: - 80 dB at 5 MHz
• "T" Switch Configuration
• TTL and CMOS Logic Compatible
• Fast Switching - tON: 45 ns
• Low RDS(on): 30 
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
•
•
•
Flat Frequency Response
High Color Fidelity
Low Insertion Loss
Improved System Performance
Reduced Board Space
Reduced Power Consumption
Improved Data Throughput
APPLICATIONS
•
•
•
•
•
•
•
•
RF and Video Switching
RGB Switching
Local and Wide Area Networks
Video Routing
Fast Data Acquisition
ATE
Radar/FLR Systems
Video Multiplexing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG540
Dual-In-Line
DG540
18
GND
S1
4
17
S2
V-
5
16
V+
GND
6
15
GND
S4
7
14
S3
GND
8
13
GND
D4
9
12
D3
IN4
10
11
IN3
3
2
1
20 19
D2
3
IN 2
GND
S1
4
18
GND
V-
5
17
S2
GND
6
16
V+
S4
7
15
GND
GND
8
14
S3
9
10 11 12 13
GND
D2
IN 1
19
D3
2
IN3
D1
GND
IN2
D4
20
IN4
1
D1
PLCC
IN1
Top View
Top View
TRUTH TABLE
Logic
0
1
Switch
OFF
ON
Logic “0” 0.8 V
Logic “1” 2 V
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
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DG540, DG541, DG542
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG542
DG541
Dual-In-Line and SOIC
Dual-In-Line and SOIC
IN1
1
16
IN2
IN1
1
16
IN2
D1
2
15
D2
D1
2
15
D2
S1
3
14
S2
GND
3
14
GND
V-
4
13
V+
S1
4
13
S2
GND
5
12
GND
V-
5
12
V+
S4
6
11
S3
S4
6
11
S3
D4
7
10
D3
GND
7
10
GND
IN4
8
9
IN3
D4
8
9
D3
Top View
Top View
TRUTH TABLE - DG541
TRUTH TABLE - DG542
Logic
Switch
Logic
SW1, SW2
0
OFF
0
OFF
ON
1
ON
1
ON
OFF
Logic "0" 0.8 V
Logic "1" 2 V
SW3, SW4
Logic "0" 0.8 V
Logic "1" 2 V
ORDERING INFORMATION
Temp Range
DG540
Package
- 40 to 85 °C
20-Pin Plastic DIP
20-Pin PLCC
- 55 to 125 °C
20-Pin Sidebraze
Part Number
DG540DJ-E3
DG540DN-E3
DG540AP
DG540AP/883
DG541
- 40 to 85 °C
16-Pin Plastic DIP
16-Pin Narrow SOIC
- 55 to 125 °C
16-Pin Sidebraze
DG541DJ-E3
DG541DY-T1-E3
DG541AP
DG541AP/883, 5962-9076401MEA
DG542
- 40 to 85 °C
16-Pin Plastic DIP
16-Pin Narrow SOIC
- 55 to 125 °C
16-Pin Sidebraze
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DG542DJ-E3
DG542DY-T1-E3
DG542AP
DG542AP/883, 5962-91555201MEA
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG540, DG541, DG542
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
Parameter
Limit
Unit
- 0.3 to 21
V+ to VV+ to GND
- 0.3 to 21
V- to GND
- 19 to + 0.3
(V-) - 0.3 to (V+) + 0.3
or 20 mA, whichever occurs first
(V-) - 0.3 to (V+) + 14
or 20 mA, whichever occurs first
20
Digital Inputs
VS, VD
Continuous Current (Any Terminal)
40
Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)
(AP Suffix)
Storage Temperature
(DJ, DN, DY Suffixes)
- 65 to 150
20-Pin Plastic
470
20-Pin PLCC
800
DIPc
16-Pin Narrow Body
mA
°C
- 65 to 125
16-Pin Plastic DIPb
Power Dissipation (Package)a
V
640
SOICd
mW
800
d
900
16-, 20-Pin Sidebraze DIPe
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6.5 mW/°C above 25 °C.
c. Derate 7 mW/°C above 25 °C.
d. Derate 10 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (typical channel)
V+
GND
VREF
S
IN
+
D
V-
Figure 1.
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
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DG540, DG541, DG542
Vishay Siliconix
SPECIFICATIONSa
A Suffix
D Suffixes
- 55 °C to 125 °C - 40 °C to 85 °C
Test Conditions
Unless Specified
V+ = 15 V, V- = - 3 V
Parameter
Analog Switch
Symbol
VINH = 2 V, VINL = 0.8 Vf
Temp.b
Analog Signal Range
Drain-Source
On-Resistance
RDS(on) Match
VANALOG
V- = - 5 V, V+ = 12
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
RDS(on)
RDS(on)
IS = - 10 mA, VD = 0 V
Source Off Leakage Current
IS(off)
VS = 0 V, VD = 10 V
Drain Off Leakage Current
ID(off)
VS = 10 V, VD = 0 V
Channel On Leakage Current
ID(on)
VS = V D = 0 V
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
-5
5
60
100
6
10
500
10
500
10
1000
-5
5
60
75
6
10
100
10
100
10
100
V
30
2
- 0.05
- 0.05
- 0.05
- 10
- 500
- 10
- 500
- 10
- 1000
- 10
- 100
- 10
- 100
- 10
- 100

nA
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
Room
Full
0.05
2
-1
- 20
2
0.8
1
20
-1
- 20
0.8
1
20
IIN
VIN = GND or V+
On State Input Capacitancee
CS(on)
VS = V D = 0 V
Room
14
20
Off State Input Capacitancee
CS(off)
VS = 0 V
Room
2
4
4
CD(off)
VD = 0 V
Room
2
4
4
BW
RL = 50 , See Figure 5
Room
Room
Full
Room
Full
Room
Full
Room
Full
500
Input Current
V
µA
Dynamic Characteristics
Off State Output
Bandwidth
Capacitancee
Turn-On Time
Turn-Off Time
tON
tOFF
DG540
DG541
RL = 1 k
CL = 35 pF
50 % to 90 %
See Figure 2
DG542
DG540
DG541
DG542
Charge Injection
Off Isolation
All Hostile Crosstalk
Q
OIRR
XTALK(AH)
70
130
100
160
50
85
60
85
55
20
25
Room
- 25
Room
- 80
Room
- 60
Room
- 75
RIN = 10 , RL = 75 
f = 5 MHz, See Figure 6
Room
- 85
3.5
All Channels On or Off
Room
Full
Room
Full
pF
MHz
45
CL = 1000 pF, VS = 0 V
See Figure 3
RIN = 75 RL = 75  DG540
DG541
f = 5 MHz
See Figure 4
DG542
20
70
130
100
160
50
85
60
85
ns
pC
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
- 3.2
6
9
-6
-9
6
9
-6
-9
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG540, DG541, DG542
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
6
100 nA
5
10 nA
4
I+
I S(off), I D(off)– Leakage
3
I (mA)
2
1
IGND
0
-1
-2
I-3
1 nA
100 pA
10 pA
1 pA
-4
-5
- 55
0.1 pA
- 35
- 15
5
25
45
65
Temperature (°C)
85
105
- 55
125
Supply Curent vs. Temperature
0
25
50
75
Temperature (°C)
42
120
RDS(on) – Drain-Source On-Resistance (Ω)
V+ = 15 V
V- = - 3 V
140
125 °C
100
80
25 °C
60
- 55 °C
40
20
-1
1
3
5
7
9
42
40
40
38
38
V- = - 5 V
36
36
V+ = 12 V
34
34
32
32
V- = - 3 V
V+ = 15 V
30
30
20
20
11
V- = - 1 V
18
-5 -4 -3
-2 -1
0
10 11 12 13 14 15 16
VD – Drain Voltage (V)
V- – Negative Supply (V)
V+ – Positive Supply (V)
RDS(on) vs. Drain Voltage
V+ Constant
V- Constant
22
- 110
20
- 100
RL = 75 Ω
- 90
18
- 80
ISO (dB)
16
C (pF)
125
V+ = 10 V
18
0
-3
100
ID(off), IS(off) vs. Temperature
160
r DS(on) – Drain-Source On-Resistance (Ω)
- 25
14
DG540
- 70
DG542
- 60
- 50
12
DG541
- 40
10
- 30
8
- 20
- 10
6
0
2
4
6
8
10
VD – Drain Voltage (V)
On Capacitance
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
12
14
1
10
f – Frequency (MHz)
100
Off Isolation
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DG540, DG541, DG542
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
- 100
- 110
- 90
- 100
RL = 75 Ω
- 80
- 70
- 80
1 k
- 60
X TALK (dB)
OIRR (dB)
DG540
- 90
180 Ω
10 k
- 50
- 40
DG542
- 70
- 60
DG541
- 50
- 30
- 40
- 20
- 30
- 10
- 20
- 10
0
1
10
f – Frequency (MHz)
1
100
10
f - Frequency (MHz)
Off Isolation vs. Frequency and
Load Resistance (DG540)
100
All Hostile Crosstalk
90
40
80
30
70
20
60
Time (ns)
Q (pC)
10
0
- 10
tON
50
40
30
- 20
tOFF
20
CL = 1000 pF
- 30
10
0
- 40
-3
-2
-1
0
1
2
3
4
5
VS – Source Voltage (V)
6
7
8
- 55
Charge Injection vs. VS
- 25
0
25
50
75
Temperature (°C)
100
125
Switching Times vs. Temperature (DG540/541)
20
90
80
18
V+ – Positive Supply (V)
tON
70
Time (ns)
60
tBBM
50
40
tOFF
30
20
16
Operating
Voltage
Area
14
12
10
10
0
- 55
- 25
0
25
50
Temperature (°C)
75
100
Switching and Break-Before-Make Time
vs. Temperature (DG542)
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125
0
-1
-2
-3
-4
-5
-6
V- – Negative Supply (V)
Operating Supply Voltage Range
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
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DG540, DG541, DG542
Vishay Siliconix
TEST CIRCUITS
+ 15 V
3V
tr < 20 ns
tf < 20 ns
3V
V+
D
S
VO
IN
CL
35 pF
RL
1 kΩ
V-
GND
Logic
Input
Switch
Input
50 %
VS
90 %
Switch
Output
0
-3V
tON
tOFF
CL (includes fixture and stray capacitance)
RL
VO = VS
RL + rDS(on)
Figure 2. Switching Time
ΔV O
+ 15 V
V+
Rg
VO
D
S
VO
IN
Vg
CL
1000 pF
3V
INX
V-
GND
ON
OFF
ON
ΔVO = measured voltage error due to charge injection
The charge injection in coulombs is ΔQ = C L x DV O
-3V
Figure 3. Charge Injection
+ 15 V
C
V+
S
VS
Rg = 75 Ω
0 V, 2.4 V
+ 15 V
VO
D
RL
75 Ω
IN
C
V+
S
VS
VO
D
Rg = 50 Ω
GND
V-
RL
50 Ω
C
0 V, 2.4 V
IN
GND
V-
C
-3V
Off Isolation = 20 log
VS
VO
C = RF Bypass
Figure 4. Off Isolation
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
-3V
Figure 5. Bandwidth
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DG540, DG541, DG542
Vishay Siliconix
TEST CIRCUITS
C
+ 15 V
V+
S1
10 Ω
2.4 V
D1
VO
RL
75 Ω
INX
S2
D2
S3
D3
S4
D4
GND
V-
RL
RL
RL
C
- 15 V
VOUT
XTA LK(AH) = 20 log10 V
IN
Figure 6. All Hostile Crosstalk
APPLICATIONS
Device Description
Frequency Response
The DG540, DG541, DG542 family of wideband switches
A single switch on-channel exhibits both resistance (RDS(on))
offers true bidirectional switching of high frequency analog or
and capacitance (CS(on)). This RC combination has an
digital signals with minimum signal crosstalk, low insertion
attenuation effect on the analog signal – which is frequency
loss, and negligible non-linearity distortion and group delay.
dependent (like an RC low-pass filter). The - 3-dB bandwidth
Built on the Siliconix D/CMOS process, these "T" switches
of the DG540 is typically 500 MHz (into 50 ). This measured
provide excellent off-isolation with a bandwidth of around
figure of 500 MHz illustrates that the switch channel can not
500 MHz (350 MHz for DG541). Silicon-gate D/CMOS
be represented by a two stage RC combination. The on
processing also yields fast switching speeds.
capacitance of the channel is distributed along the on-
An on-chip regulator circuit maintains TTL input compatibility
resistance, and hence becomes a more complex multi stage
over the whole operating supply voltage range, easing
network of R’s and C’s making up the total RDS(on) and
CS(on). See Application Note AN502 for more details.
control logic interfacing.
Circuit layout is facilitated by the interchangeability of source
and drain terminals.
Off-Isolation and Crosstalk
Off-isolation and crosstalk are affected by the load
resistance and parasitic inter-electrode capacitances. Higher
off-isolation is achieved with lower values of RL. However,
low values of RL increase insertion loss requiring gain
adjustments down the line. Stray capacitances, even a
fraction of 1 pF, can cause a large crosstalk increase. Good
layout and ground shielding techniques can considerably
improve your ac circuit performance.
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Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
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DG540, DG541, DG542
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APPLICATIONS
Power Supplies
A useful feature of the DG54X family is its power supply
flexibility. It can be operated from a single positive supply
+ 15 V
(V+) if required (V- connected to ground).
Note that the analog signal must not exceed V- by more than
+
- 0.3 V to prevent forward biasing the substrate p-n junction.
C1
The use of a V- supply has a number of advantages:
1.
C2
V+
It allows flexibility in analog signal handling, i.e., with
V- = - 5 V and V+ = 12 V; up to ± 5 V ac signals can
S1
D1
S2
D2
be controlled.
2.
The value of on capacitance [CS(on)] may be reduced.
DG540
S3
A property known as ‘the body-effect’ on the DMOS
switch devices causes various parametric effects to
D3
S4
D4
occur. One of these effects is the reduction in CS(on)
GNDs
for an increasing V body-source. Note, however, that
V-
to increase V- normally requires V+ to be reduced
(since V+ to V- = 21 V max.). Reduction in V+ causes
C1 = 10 μF Tantalum
C2 = 0.1 μF Ceramic
an increase in RDS(on), hence a compromise has to
C1
C2
+
be achieved. It is also useful to note that optimum
-3V
video linearity performance (e.g., differential phase
and gain) occurs when V- is around - 3 V.
3.
Figure 7. Supply Decoupling
V- eliminates the need to bias the analog signal using
potential dividers and large coupling capacitors.
Decoupling
It is an established RF design practice to incorporate
sufficient bypass capacitors in the circuit to decouple the
power supplies to all active devices in the circuit. The
dynamic performance of the DG54X is adversely affected by
Board Layout
PCB layout rules for good high frequency performance must
be observed to achieve the performance boasted by the
DG540. Some tips for minimizing stray effects are:
1.
Use extensive ground planes on double sided PCB,
poor decoupling of power supply pins. Also, of even more
separating adjacent signal paths. Multilayer PCB is
significance, since the substrate of the device is connected
even better.
to the negative supply, adequate decoupling of this pin is
essential.
2.
with all channel paths of near equal length.
Rules:
1.
2.
3.
Keep signal paths as short as practically possible,
Decoupling capacitors should be incorporated on all
power supply pins (V+, V-). (See Figure 7.)
They should be mounted as close as possible to the
device pins.
3.
Careful arrangement of ground connections is also
very important. Star connected system grounds
eliminate signal current flowing through ground path
parasitic resistance from coupling between channels.
Capacitors should have good high frequency
characteristics - tantalum bead and/or monolithic
ceramic types are adequate.
Suitable decoupling capacitors are 1- to 10 µF
tantalum bead, plus 10- to 100 nF ceramic.
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
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DG540, DG541, DG542
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APPLICATIONS
Figure 8 shows a 4 Channel video multiplexer using a DG540.
+ 15 V
V+
CH1
CH2
75 Ω
Si582
75 Ω
+
CH3
A=2
75 Ω
CH4
-
75 Ω
DG540
V75 Ω
DIS
250 Ω
250 Ω
-3V
TTL Channel Select
Figure 8. 4 by 1 Video Multiplexing Using the DG540
Figure 9 shows an RGB selector switch using two DG542s.
+ 15 V
V+
R1
75 Ω
Red Out
R2
75 Ω
G1
75 Ω
Green Out
G2
75 Ω
DG542
V-3V
Si584
+ 15 V
V+
B1
75 Ω
Blue Out
B2
75 Ω
Sync 1
75 Ω
Sync Out
Sync 2
75 Ω
DG542
RGB Source Select
V-3V
Figure 9. RGB Selector Using Two DG542s
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70055.
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Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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1
Package Information
Vishay Siliconix
PDIP: 20ĆLEAD
20
19
18
17
16
15
14
13
12
11
E1
1
2
3
4
5
6
7
8
9
E
10
D
S
Q1
A
A
A1
L
15°
MAX
C
B1
e1
B
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
MILLIMETERS
Min
Max
eA
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
24.89
26.92
0.980
1.060
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
3.175
3.81
0.123
0.150
1.27
2.03
0.050
0.080
1.02
2.03
0.040
0.080
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5484
Document Number: 71262
06-Jul-01
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1
Package Information
Vishay Siliconix
PLCC: 2OĆLEAD
D–SQUARE
A2
MILLIMETERS
D1–SQUARE
B1
B
e1
D2
Document Number: 71263
02-Jul-01
INCHES
Min
Max
Min
Max
4.20
4.57
0.165
0.180
2.29
3.04
0.090
0.120
0.51
–
0.020
–
0.331
0.553
0.013
0.021
0.661
0.812
0.026
0.032
9.78
10.03
0.385
0.395
8.890
9.042
0.350
0.356
7.37
8.38
0.290
0.330
1.27 BSC
0.050 BSC
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5306
A1
A
Dim
A
A1
A2
B
B1
D
D1
D2
e1
0.101 mm
0.004″
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1
Package Information
Vishay Siliconix
SIDEBRAZE: 16ĆLEAD
16
15
14
13
12
11
10
9
E
1
2
3
4
5
6
7
8
D
S1
S2
A
Q
L
e
b
c
b2
eA
Dim
A
b
b2
c
D
E
e
eA
L
Q
S2
S1
MILLIMETERS
Min
Max
INCHES
Min
Max
2.67
4.45
0.105
0.175
0.38
0.53
0.015
0.021
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
19.56
21.08
0.770
0.830
7.11
7.87
0.280
0.310
2.54 BSC
0.100 BSC
7.62 BSC
0.300 BSC
3.18
4.45
0.125
0.175
0.64
1.40
0.025
0.055
0.25
–
0.010
–
0.13
–
0.005
–
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5418
Document Number: 71270
03-Jul-01
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1
Package Information
Vishay Siliconix
SIDEBRAZE: 20ĆLEAD
Meets MIL-STD-1835, D8, Configuration C
20
E
1
2
3
D
S1
S2
A
Q
L
b
e
C
b2
eA
Dim
A
b
b2
c
D
E
e
eA
L
Q
S2
S1
MILLIMETERS
Min
Max
INCHES
Min
Max
2.67
4.45
0.105
0.175
0.38
0.53
0.015
0.021
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
24.89
26.16
0.980
1.030
7.11
7.87
0.280
0.310
2.54 BSC
0.100 BSC
7.62 BSC
0.300 BSC
3.18
4.45
0.125
0.175
0.64
1.40
0.025
0.055
0.25
–
0.010
–
0.13
–
0.005
–
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5309
Document Number: 71271
02-Jul-01
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000