DG2016, DG2026 Vishay Siliconix High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION FEATURES The DG2016/DG2026 are monolithic CMOS dual single-pole/double-throw (SPDT) analog switchs. They are specifically designed for low-voltage, high bandwidth applications. The DG2016/DG2026’s on-resistance (3 at 2.7 V), matching and flatness are guaranteed over the entire analog voltage range. Wide dynamic performance is achieved with better than - 80 dB for both cross-talk and off-isolation at 1 MHz. Both SPDT’s operate with independent control logic, conduct equally well in both directions and block signals up to the power supply level when off. Break-before-make is guaranteed. With fast switching speeds, low on-resistance, high bandwidth, and low charge injection, the DG2016/DG2026 are ideally suited for audio and video switching with high linearity. Built on Vishay Siliconix’s low voltage CMOS technology, the DG2016/DG2026 contain an epitaxial layer which prevents latch-up • Halogen-free according to IEC 61249-2-21 Definition • Single Supply (1.8 V to 5.5 V) • Low On-Resistance - RON: 2.4 • Crosstalk and Off Isolation: - 81 dB at 1 MHz • MSOP-10 Package • Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • • Reduced Power Consumption High Accuracy Reduce Board Space Low-Voltage Logic Compatible High Bandwidth APPLICATIONS • • • • • • Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Low-Voltage Data Acquisition ATE FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2016DQ – MSOP-10 IN1 1 10 COM1 NO1 2 9 NC1 Logic NC1 and NC2 NO1 and NO2 GND 3 8 V+ 0 ON OFF NO2 4 7 NC2 1 OFF ON IN2 5 6 COM2 TRUTH TABLE Top View DG2026DQ – MSOP-10 IN1 1 10 COM1 NC1 2 9 NO1 GND 3 8 V+ NC2 4 7 NO2 IN2 5 6 COM2 ORDERING INFORMATION Temp Range Package - 40 °C to 85 °C MSOP-10 Part Number DG2016DQ-T1-E3 DG2026DQ-T1-E3 Top View Document Number: 72030 S11-1185-Rev. D, 13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2016, DG2026 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Reference V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) ± 50 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature (D Suffix) Power Dissipation (Packages) b MSOP-10 mA - 65 to 150 °C 320 mW c Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4 mW/°C above 70 °C. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 Ve Limits - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged On-Resistance RON Flatness RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full RON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room INO(off) INC(off) Switch Off Leakage Currentf ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V 3 4.8 5.3 1.6 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 1.6 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Cin Input Capacitance IINL or IINH Input Current 0.4 Full VIN = 0 V or V+ Full 5 1 V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF td Break-Before-Make Time Injectiond QINJ d Off-Isolation OIRR Crosstalkd XTALK Charge CNC(off) d CNO(on) 28 53 59 Room Full 13 38 38 Full CL = 1 nF, VGEN = 0 V, RGEN = 0 RL = 50 , CL = 5 pF, f = 1 MHz CNO(off) NO, NC Off Capacitanced Channel-On Capacitance VNO or VNC = 2 V, RL = 50 , CL = 35 pF Room Full VIN = 0 V or V+, f = 1 MHz CNC(on) ns 1 Room 38 Room - 78 Room - 82 Room 15 Room 15 Room 49 Room 45 Full 0.01 pC dB pF Power Supply Power Supply Current www.vishay.com 2 I+ VIN = 0 V or V+ 1 µA Document Number: 72030 S11-1185-Rev. D, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2016, DG2026 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 Ve Limits - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged On-Resistance RON Flatness RON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full RON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room INO(off) INC(off) Switch Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM =1 V/4.5 V 2.4 4 4.3 1.2 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 2 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Cin Input Capacitance IINL or IINH Input Current 0.8 Full VIN = 0 V or V+ Full 5 1 V pF 1 µA Dynamic Characteristics Room Full 23 48 52 VNO or VNC = 3 V, RL = 50 , CL = 35 pF Room Full 8 33 35 CL = 1 nF, VGEN = 0 V, RGEN = 0 Room 79 Room - 81 Room - 82 CNO(off) Room 14 CNC(off) Room 14 Room 48 Room 44 Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time td Injectiond QINJ Charge Off-Isolationd Crosstalk OIRR d XTALK Source-Off Capacitanced d Channel-On Capacitance CNO(on) Full RL = 50 , CL = 5 pF, f = 1 MHz VIN = 0 V or V+, f = 1 MHz CNC(on ns 1 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 1.8 VIN = 0 V or V+ Full 0.01 5.5 V 1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72030 S11-1185-Rev. D, 13-Jun-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2016, DG2026 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 8 T = 25 °C IS = 10 mA 4 R ON - On-Resistance () RON - On-Resistance () 7 6 5 4 V+ = 3.0 V V+ = 5.0 V 3 2 V+ = 3 V 85 °C 25 °C - 40 °C 3 2 V+ = 5 V 85 °C 1 25 °C - 40 °C 1 0 0 0 1 2 3 VCOM - Analog Voltage (V) 4 5 0 2 3 4 5 VCOM - Analog Voltage (V) RON vs. VCOM and Supply Voltage RON vs. Analog Voltage and Temperature 10 000 10 mA V+ = 5 V 1 mA 1000 100 I+ - Supply Current (A) I+ - Supply Current (nA) 1 V+ = 5 V VIN = 0 V V+ = 3 V VIN = 0 V 10 100 µA 10 µA 1 µA 100 nA 1 - 60 10 nA - 40 - 20 0 20 40 Temperature (°C) 60 80 10 100 Supply Current vs. Temperature 1K 10 K 100 K 1M Input Switching Frequency (Hz) 10 M Supply Current vs. Input Switching Frequency 100 10 000 V+ = 5 V 75 ICOM(off) 100 Leakage Current (pA) INO(off), INC(off) 1000 Leakage Current (pA) 100 ICOM(on) 10 V+ = 5 V 50 ICOM(on) 25 ICOM(off) 0 INO(off), INC(off) - 25 - 50 - 75 1 - 60 - 100 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 4 100 0 1 2 3 4 5 VCOM, V NO, V NC - Analog Voltage (V) Leakage vs. Analog Voltage Document Number: 72030 S11-1185-Rev. D, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2016, DG2026 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 10 50 LOSS - 10 Loss, OIRR, X TALK (dB) tON / t OFF - Switching Time (µs) RL = 50 40 tON V+ = 3 V 30 tON V+ = 5 V 20 tOFF V+ = 3 V - 30 XTA LK - 50 OIRR V+ = 5 V RL = 50 - 70 10 tOFF V+ = 5 V 0 - 60 - 40 - 20 0 20 40 Temperature (°C) 60 80 - 90 100 K 100 1M Switching Time vs. Temperature 100 M 1G Insertion Loss, Off-Isolation Crosstalk vs. Frequency 3.0 80 60 Q - Charge Injection (pC) 2.5 2.0 1.5 1.0 VT - Switching Threshold (V) 10 M Frequency (Hz) 40 20 V+ = 5 V 0 - 20 V+ = 3 V - 40 0.5 - 60 0.0 - 80 0 1 2 3 4 5 V+ - Supply Voltage (V) 6 0 7 1 2 3 4 VCOM - Analog Voltage (V) 5 Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC tr < 5 ns tf < 5 ns VOUT 0.9 x V OUT IN Logic Input 50 % VINL Switch Output COM VINH RL 50 GND CL 35 pF Switch Output 0V tON tOFF 0V CL (includes fixture and stray capacitance) V OUT = V COM RL Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. R L + R ON Figure 1. Switching Time Document Number: 72030 S11-1185-Rev. D, 13-Jun-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2016, DG2026 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ VNO VNC COM NO VINH tr < 5 ns tf < 5 ns VINL VO NC RL 50 IN CL 35 pF GND VNC = V NO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ VOUT V+ Rgen VOUT COM NC or NO VOUT + IN IN Vgen CL = 1 nF VIN = 0 - V+ On Off On GND Q = VOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection V+ V+ 10 nF 10 nF V+ V+ NC or NO IN COM 0 V, 2.4 V Meter COM COM IN 0 V, 2.4 V RL NC or NO GND GND Analyzer HP4192A Impedance Analyzer or Equivalent f = 1 MHz VCOM Off Isolation = 20 log V NO/ NC Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72030. www.vishay.com 6 Document Number: 72030 S11-1185-Rev. D, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places C ς A2 Seating Plane 0.05 S E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) NOTES: 1. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. N = 10L Die thickness allowable is 0.203"0.0127. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71245 12-Jul-02 MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.17 - 0.27 8 0.17 0.20 0.23 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.50 BSC 2.00 BSC 0.40 0.55 10 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000