DG2711 Datasheet

DG2711
Vishay Siliconix
Low-Voltage, Sub-Ohm, SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2711 is a sub-ohm single-pole/double-throw
monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, high speed (tON: 25 ns, tOFF: 14 ns), low
on-resistance (RDS(on): 0.44 ) and small physical size
(SC70), the DG2711 is ideal for portable and battery
powered applications requiring high performance and
efficient use of board space.
The DG2711 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG2711.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
•
•
•
•
•
•
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For analog
switching products manufactured with 100 % matte tin
device terminations, the lead (Pb)-free "-E3" suffix is being
used as a designator.
Low voltage operation (1.6 V to 3.6 V)
Low on-resistance - RDS(on): 0.44  typ.
Fast switching - tON: 25 ns, tOFF: 14 ns
Low leakage
TTL/CMOS compatible
6-pin SC-70 package
• Compliant to RoHS directive 2002/95/EC
BENEFITS
•
•
•
•
Reduced power consumption
Simple logic interface
High accuracy
Reduce board space
APPLICATIONS
•
•
•
•
•
Cellular phones
Communication systems
Portable test equipment
Battery operated systems
Sample and hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Logic
NC
NO
0
ON
OFF
1
OFF
ON
Top View
Device Marking: E9xx
ORDERING INFORMATION
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
Temp. Range
Package
Part Number
- 40 to 85 °C
SC70-6
DG2711DL-T1-E3
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DG2711
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Reference V+ to GND
Unit
- 0.3 to + 4
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC and COM Pins)
± 200
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature
(D Suffix)
b
Power Dissipation (Packages)
6-Pin SO70
c
mA
- 65 to 150
°C
250
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 3.1 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 1.8 V, ± 10 %, VIN = 0.4 V or 1.0 Ve
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
2.0
2.5

Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
RON
On-Resistance
Switch Off Leakage Currentf
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
V+ = 1.8 V, VCOM = 0.9 V
INO, INC = 100 mA
Room
Full
Room
V+ = 2.2 V,
VNO, VNC = 0.2 V/2 V, VCOM = 2 V/0.2 V
-1
- 10
1
10
-1
- 10
1
10
Fulld
-1
- 10
1
10
1.0
Fulld
Room
Fulld
V+ = 2.2 V, VNO, VNC = VCOM = 0.2 V/2 V
0.8
Room
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin
Full
f
IINL or IINH
Input Current
VIN = 0 or V+
Full
0.4
5
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
Charge Injection
d
d
VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF
Figures1 and 2
td
QINJ
Off-Isolation
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
CNO(off)
CNC(off)
Channel-On Capacitanced
CON
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2
Room
Room
Full
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 figure 3
RL = 50, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
36
60
62
22
42
44
Fulld
Room
ns
3
20
Room
- 56
Room
- 56
Room
73
Room
167
pC
dB
pF
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
DG2711
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
Analog Switch
VNO, VNC,
VCOM
Analog Signal Ranged
On-Resistance
RON Flatness
RON Match
Switch Off Leakage Current
RON
V+ = 2.7 V, VCOM = 1.5 V
INO, INC = 100 mA
Room
Full
0.44
0.6
0.7
RON
Flatness
V+ = 2.7 V, VCOM = 0.6 V, 1.5 V
INO, INC = 100 mA
Room
0.14
0.2
RON
V+ = 2.7 V, VCOM = 1.5 V
INO, INC = 100 mA
Room
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 3.3 V,
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V

0.07
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
1.4
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin
Full
f
IINL or IINH
Input Current
VIN = 0 or V+
Full
0.5
5
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
td
Injectiond
QINJ
Charge
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitance
d
CNO(off)
CNC(off)
VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF
figures 1 and 2
Room
Full
25
46
48
Room
Full
14
38
40
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 , figure 3
RL = 50, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
CON
ns
1
Room
28
Room
- 56
Room
- 56
Room
70
Room
163
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.6
V+ = 3.6 V, VIN = 0 or V+
0.01
3.6
V
1.0
µA
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 3 V leakage testing, not production tested.
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
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DG2711
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
1.50
RON - On-Resistance (Ω)
1.25
––
––
––
––
––
––
––
––
1.00
0.75
V+ = 3.0 V
IS = 100 mA
0.7
V+ = 1.6 V
V+ = 1.8 V
V+ = 2.0 V
V+ = 2.5 V
V+ = 2.7 V
V+ = 3.0 V
V+ = 3.3 V
V+ = 3.6 V
RON - On-Resistance (Ω)
T = 25 °C
IS = 100 mA
0.50
0.25
0.6
85 °C
- 40 °C
0.4
0.3
0.2
0.1
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
RON vs. VCOM and Single Supply Voltage
RON vs. Analog Voltage and Temperature
100 m
10 000
V+ = 3 V
VIN = 0 V
V+ = 3 V
10 m
1m
1000
I+ - Supply Current (A)
I+ - Supply Current (nA)
25 °C
0.5
100
10
100 µ
10 µ
1µ
100 n
10 n
1
- 60
1n
- 40
- 20
0
20
40
60
80
100
10
Temperature (°C)
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
1000
300
V+ = 3.3 V
250
ICOM(on)
V+ = 3.3 V
200
150
ICOM(off)
Leakage Current (pA)
Leakage Current (pA)
100
10
INO(off)/INC(off)
1
100
50
0
- 50
–– ICOM(off)
–– INO(off)/INC(off)
–– ICOM(on)
- 100
- 150
- 200
- 250
0.1
- 60
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- 40
- 20
0
20
40
60
80
100
- 300
0.00
0.55
1.10
1.65
2.20
Temperature (°C)
VCOM, V NO, V NC - Analog Voltage
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
2.75
3.30
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
DG2711
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
tON V+ = 1.8 V
30
tON V+ = 3.0 V
25
tOFF V+ = 1.8 V
tOFF V+ = 2.0 V
tOFF V+ = 3.0 V
15
Loss, OIRR, XTALK (dB)
t ON , t OFF - Switching Time (ns)
35
20
0
tON V+ = 2.0 V
LOSS
- 10
- 20
XTALK
- 30
OIRR
- 40
- 50
V+ = 3 V
RL = 50 Ω
- 60
10
- 70
5
0
- 60
- 80
- 40
- 20
0
20
40
60
80
- 90
100 K
100
1M
Temperature (°C)
10 M
100 M
1G
Frequency (Hz)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation, Crosstalk vs.
Frequency
240
2.00
220
200
Q - Charge Injection (pC)
V T - Switching Threshold (V)
1.75
1.50
1.25
1.00
0.75
0.50
180
160
V+ = 3 V
140
120
100
80
60
V+ = 1.8 V
40
0.25
0.00
1.0
20
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
V+ - Supply Voltage (V)
VCOM - Analog Voltage (V)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
3.0
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DG2711
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
VINL
V+
NO or NC
Switch
Input
tr < 5 ns
tf < 5 ns
50 %
Switch Output
COM
VOUT
0.9 x V OUT
Switch
Output
IN
Logic
Input
RL
50
GND
CL
35 pF
0V
tOFF
tON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT = V COM
RL
RL + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
tr < 5 ns
tf < 5 ns
VINL
COM
NO
VINH
VO
NC
RL
50 Ω
IN
CL
35 pF
GND
VNC = V NO
VO
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
COM
NC or NO
VOUT
VOUT
+
Vgen
IN
CL = 1 nF
IN
On
Off
On
GND
Q = ΔVOUT x CL
VIN = 0 - V+
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
DG2711
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
IN
0 V, 2.4 V
COM
RL
GND
V COM
Off Isolation = 20 log V
NO/ NC
Analyzer
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73200.
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
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Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000