VISHAY DG2518DN-T1-E4

DG2517/DG2518
Vishay Siliconix
3 Ω, High Bandwidth, Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2517/DG2518 are low-voltage dual single-pole/double-throw monolithic CMOS analog switches. Designed to
operate from 1.8 V to 5.5 V power supply, the DG2517/
DG2518 achieves a bandwidth of 157 MHz while providing
low on-resistance (3 Ω), excellent on-resistance matching
(0.2 Ω) and flatness (1 Ω) over the entire signal range.
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The DG2517/DG2518 offers the advantage of high linearity
that reduces signal distortion, making ideal for audio, video,
and USB signal routing applications. Additionally, the
DG2517/DG2518 are 1.6 V logic compatible within the full
operation voltage range.
BENEFITS
Built on Vishay Siliconix’s proprietary sub-micron high-density process, the DG2517/DG2518 brings low power consumption at the same time as reduces PCB spacing with the
MSOP10 and DFN10 packages.
As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the
lead (Pb)-free device terminations. The DFN package has a
nickel-palladium-gold device termination and is represented
by the lead (Pb)-free "-E4" suffix. The MSOP package uses
100 % matte Tin device termination and is represented by
the lead (Pb)- free "-E3" suffix. Both the matte Tin and nickelpalladium-gold device terminations meet all JEDEC standards for reflow and MSL ratings.
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1.8 to 5.5 V Single Supply Operation
Low Ron: 3 Ω at 4.2 V
157 MHz, - 3 dB Bandwidth
Low Off-Isolation, - 47 dB at 10 MHz
+ 1.6 V Logic Compatible
RoHS
COMPLIANT
High Linearity
Low Power Consumption
High Bandwidth
Full Rail Signal Swing Range
APPLICATIONS
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USB/UART Signal Switching
Audio/Video Switching
Cellular Phone
Media Players
Modems
Hard Drives
PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2517
IN1
1
10
COM1
NO1
2
9
NC1
GND
3
8
V+
Logic
NC1 and NC2
NO1 and NO2
NO2
4
7
NC2
0
ON
OFF
6
COM2
1
OFF
ON
IN2
5
TRUTH TABLE
Top View
DG2518
IN1
1
10
COM1
NC1
2
9
NO1
GND
3
8
V+
NC2
4
7
NO2
IN2
5
6
COM2
ORDERING INFORMATION
Temp Range
Package
MSOP-10
- 40 to 85 °C
DFN-10
Part Number
DG2517DQ-T1-E3
DG2518DQ-T1-E3
DG2517DN-T1-E4
DG2518DN-T1-E4
Top View
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
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1
DG2517/DG2518
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference to GND
V+
IN, COM, NC, NOa
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Limit
MSOP-10c
DFN-10d
Power Dissipation (Packages)b
Unit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 200
- 65 to 150
320
1191
V
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 14.9 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Analog Signal Ranged
VNO, VNC,
VCOM
On-Resistance
rON Flatness
rON Match Between Channels
Switch Off Leakage Currentf
rON
rON
Flatness
ΔrON
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
V+ = 2.7 V, VCOM = 1.5, 2 V
INO/NC = 10 mA
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
V+ = 3.6 V, VNO, VNC = 0.3 V/ 3 V
VCOM = 3 V/0.3 V
V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3 V
a
Temp
Minb
Full
0
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Limits
- 40 to 85 °C
Typc
Maxb
V+
3.2
1.0
0.1
-1
- 10
-1
- 10
-1
- 10
4.5
5.0
1.4
16
0.3
0.4
1
10
1
10
1
10
Unit
V
Ω
nA
Digital Control
Input High Voltaged
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injectiond
- 3 dB Bandwidth
td
QINJ
BW
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
CNO(off)
CNC(off)
CNO(on)
CNC(on)
Full
Full
Full
Full
V+ = 2.7 V, VNO or VNC = 1.5 V
RL = 300 Ω, CL = 35 pF
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω
0 dBm, CL = 5 pF, RL = 50 Ω
f = 1 MHz
RL = 50 Ω, CL = 5 pF
f = 10 MHz
f = 1 MHz
RL = 50 Ω, CL = 5 pF
f = 10 MHz
VIN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
1.4
0.5
4
1
1
15
10
30
50
25
35
V
pF
µA
ns
1
1
157
- 67
- 47
- 67
- 47
8
8
35
35
pC
MHz
dB
pF
Power Supply
I+
Full
0.01
1.0
µA
Power Supply Current
VIN = 0 or V+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
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Document Number: 74333
S-61774-Rev. A, 11-Sep-06
DG2517/DG2518
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
- 40 to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.0 Ve
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
VNO, VNC,
VCOM
Analog Signal Ranged
On-Resistance
rON Flatness
rON Match Between Channels
Switch Off Leakage Current
rON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
3
4.0
4.3
rON
Flatness
V+ = 4.2 V, VCOM = 1, 2, 3.5 V
INO/NC = 10 mA
Room
Full
1.1
1.4
1.6
ΔrON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VCOM = VNO, VNC = 1 V/4.5 V
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
2.0
Ω
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Cin
Input Capacitance
IINL or IINH
Input Current
Full
VIN = 0 V or V+
Full
V
0.8
4
1
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
V+ = 4.2 V, VNO or VNC = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
12
25
45
Room
Full
8
20
30
td
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Full
d
QINJ
CL = 1 nF, VGEN = 2.5 V, RGEN = 0 Ω
Room
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Break-Before-Make Time
Charge Injection
Off-Isolationd
Crosstalk
OIRR
d
XTALK
Source-Off Capacitanced
Channel-On Capacitance
d
RL = 50 Ω, CL = 5 pF
RL = 50 Ω, CL = 5 pF
f = 1 MHz
1
2
pC
Room
157
MHz
Room
- 67
f = 10 MHz
Room
- 47
f = 1 MHz
Room
- 67
Room
- 47
CNO(off)
Room
8
CNC(off)
Room
8
Room
35
Room
35
CNO(on)
f = 10 MHz
VIN = 0 or V+, f = 1 MHz
CNC(on)
ns
dB
pF
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
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DG2517/DG2518
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
5
10
T = 25 °C
INO/NC = 10 mA
V+ = 1.8 V
9
4
r ON - On-Resistance (Ω)
r ON - On-Resistance (Ω)
8
7
6
5
V+ = 2.7 V
4
3
2
V+ = 2.7 V
85 °C
25 °C
- 40 °C
V+ = 4.2 V
3
2
V+ = 4.2 V
85 °C
1
25 °C
1
- 40 °C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
rON vs. VCOM and Supply Voltage
10000
10 mA
V+ = 5.5 V
1000
V+ = 5 V
VIN = 0 V
I+ - Supply Current (A)
I+ - Supply Current (pA)
1 mA
100
100 µA
10 µA
1 µA
100 nA
10
10 nA
1
- 60
1 nA
- 40
- 20
0
20
40
60
80
10
100
100
1K
10K
1M
100K
10M
Input Switching Frequency (Hz)
Temperature (°C)
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
1000
80
V+ = 5.5 V
60
Leakage Current (pA)
Leakage Current (pA)
ICOM(on)
100
INO(off), INC(off)
10
40
20
ICOM(on)
0
INC(off), INO(off)
- 20
- 40
ICOM(off)
ICOM(off)
1
- 40
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4
- 15
- 60
10
35
60
85
- 80
0.0
1.0
2.0
3.0
4.0
Temperature (°C)
VCOM, VNO, VNC - Analog Voltage (V)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
5.0
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
DG2517/DG2518
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
0
18
RL = 300 Ω
tON, V+ = 2.7 V
14
12
tON, V+ = 4.2 V
10
8
6
tOFF, V+ = 2.7 V
4
tOFF, V+ = 4.2 V
- 20
- 30
- 40
OIRR
- 60
- 70
V+ = 5 V
RL = 50 Ω
- 40
- 20
0
20
40
60
80
- 90
100K
100
1M
100M
10M
1G
Frequency (Hz)
Temperature (°C)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Switching Time vs. Temperature
2.5
40
20
2
Q - Charge Injection (pC)
VT - Switching Threshold (V)
XTALK
- 50
- 80
2
0
- 60
LOSS
- 10
Insertion Loss, OIRR, X TALK (dB)
t ON / t OFF - Switching Time (µs)
16
1.5
1
0
V+ = 5 V
- 20
V+ = 3 V
- 40
0.5
- 60
0
- 80
1.5
2
2.5
3
3.5
4
V+ - Supply Voltage (V)
4.5
0
5
1
2
3
4
5
VCOM - Analog Voltage (V)
Charge Injection vs. Analog Voltage
Switching Threshold vs. Supply Voltage
TEST CIRCUITS
V+
Logic
Input
V+
Switch
Input
NO or NC
tr < 5 ns
tf < 5 ns
VOUT
0.9 x VOUT
IN
Logic
Input
50 %
VINL
Switch Output
COM
VINH
RL
300 Ω
GND
CL
35 pF
Switch
Output
0V
tON
tOFF
0V
CL (includes fixture and stray capacitance)
VOUT
VCOM
RL
RL
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
R ON
Figure 1. Switching Time
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
www.vishay.com
5
DG2517/DG2518
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
COM
NO
VNO
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
NC
VNC
RL
300 Ω
IN
CL
35 pF
GND
VNC = VNO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
ΔVOUT
V+
Rgen
VOUT
COM
NC or NO
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
0 V, 2.0 V
Meter
COM
0 V, 2.0 V
COM
RL
IN
NC or NO
GND
GND
Analyzer
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
VCOM
Off Isolation = 20 log V
NO NC
Figure 4. Off-Isolation
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74333.
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Document Number: 74333
S-61774-Rev. A, 11-Sep-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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