PESDxS1UB series ESD protection diodes in SOD523 package Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and other transients. 1.2 Features n n n n n n n Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs 1.3 Applications n n n n n Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Conditions Value Unit PESD3V3S1UB 3.3 V PESD5V0S1UB 5 V PESD12VS1UB 12 V PESD15VS1UB 15 V PESD24VS1UB 24 V PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package Table 1. Quick reference data …continued Symbol Parameter Conditions Cd diode capacitance VR = 0 V; f = 1 MHz Value Unit PESD3V3S1UB 207 pF PESD5V0S1UB 152 pF PESD12VS1UB 38 pF PESD15VS1UB 32 pF PESD24VS1UB 23 pF number of protected lines 1 2. Pinning information Table 2. Discrete pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 1 2 2 sym035 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PESDxS1UB Package Name Description Version SC -79 plastic surface mounted package; 2 leads SOD523 4. Marking Table 4. Marking Type number Marking code PESD3V3S1UB N1 PESD5V0S1UB N2 PESD12VS1UB N3 PESD15VS1UB N4 PESD24VS1UB N5 PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 2 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3S1UB - 330 W PESD5V0S1UB - 260 W PESD12VS1UB - 180 W PESD15VS1UB - 160 W - 160 W PESD3V3S1UB - 18 A PESD5V0S1UB - 15 A PESD12VS1UB - 5 A PESD15VS1UB - 5 A PESD24VS1UB - 3 A Tj junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Min Max Unit - 30 kV PPP Parameter Conditions peak pulse power 8/20 µs [1] PESD24VS1UB peak pulse current IPP [1] 8/20 µs Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1. Table 6. ESD maximum ratings Symbol Parameter Conditions ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge) PESD3V3S1UB - 30 kV PESD12VS1UB - 30 kV PESD15VS1UB - 30 kV PESD24VS1UB - 23 kV - 10 kV HBM MIL-STD883 Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD883, class 3 > 4 kV PESDXS1UB_SERIES_2 Product data sheet [1] PESD5V0S1UB PESDxS1UB series [1] [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 3 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 0 10 20 30 t (µs) Fig 1. 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 PESDXS1UB_SERIES_2 Product data sheet t 30 ns 40 © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 4 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse standoff voltage Conditions Min Typ Max PESD3V3S1UB - - 3.3 V PESD5V0S1UB - - 5 V PESD12VS1UB - - 12 V PESD15VS1UB - - 15 V - - 24 V PESD24VS1UB IRM VBR reverse leakage current see Figure 7 PESD3V3S1UB VRWM = 3.3 V - 0.7 2 µA PESD5V0S1UB VRWM = 5 V - 0.1 1 µA PESD12VS1UB VRWM = 12 V - <1 50 nA PESD15VS1UB VRWM = 15 V - <1 50 nA PESD24VS1UB VRWM = 24 V - <1 50 nA breakdown voltage IR = 5 mA PESD3V3S1UB 5.2 5.6 6.0 V PESD5V0S1UB 6.4 6.8 7.2 V PESD12VS1UB 14.7 15.0 15.3 V PESD15VS1UB 17.6 18.0 18.4 V 26.5 27.0 27.5 V PESD3V3S1UB - 207 300 pF PESD5V0S1UB - 152 200 pF PESD12VS1UB - 38 75 pF PESD15VS1UB - 32 70 pF - 23 50 pF IPP = 1 A - - 7 V IPP = 18 A - - 20 V IPP = 1 A - - 9 V IPP = 15 A - - 20 V IPP = 1 A - - 19 V IPP = 5A - - 35 V IPP = 1 A - - 23 V IPP = 5 A - - 40 V IPP = 1 A - - 36 V IPP = 3 A - - 70 V PESD24VS1UB Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 and 6 PESD24VS1UB V(CL)R Unit [1] clamping voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 5 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Rdiff differential resistance [1] Conditions Min Typ Max Unit PESD3V3S1UB IR = 1 mA - - 400 Ω PESD5V0S1UB IR = 1 mA - - 80 Ω PESD12VS1UB IR = 1 mA - - 200 Ω PESD15VS1UB IR = 1 mA - - 225 Ω PESD24VS1UB IR = 0.5 mA - - 300 Ω Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1. PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 6 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa147 104 001aaa193 1.2 PPP Ppp (W) PPP(25°C) 103 0.8 (1) 102 0.4 (2) 10 1 102 10 103 0 104 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C tp = 8/20 µs exponentially decay waveform, see Figure 1 (1) PESD3V3S1UB and PESD5V0S1UB (2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB Fig 3. Peak pulse power dissipation as a function of pulse time; typical values Fig 4. 001aaa148 240 Cd (pF) Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa149 50 Cd (pF) 200 40 160 30 (1) 120 20 (2) (1) (2) 80 (3) 10 40 0 0 1 2 3 4 5 0 5 10 VR (V) 15 20 25 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) PESD3V3S1UB (1) PESD12VS1UB (2) PESD5V0S1UB (2) PESD15VS1UB (3) PESD24VS1UB Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 7 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa270 10 IR IR(25˚C) (1) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S1UB; VRWM = 3.3 V PESD5V0S1UB; VRWM = 5 V IR is less than 10 nA at 150 °C for: PESD12VS1UB; VRWM = 12 V PESD15VS1UB; VRWM = 15 V PESD24VS1UB; VRWM = 24 V Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 8 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ 1 D.U.T.: PESDxS1UB IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω 2 vertical scale = 20 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div PESD24VS1UB GND PESD15VS1UB GND PESD12VS1UB GND PESD5V0S1UB GND PESD3V3S1UB GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) Fig 8. vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 006aaa001 ESD clamping test setup and waveforms PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 9 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 7. Application information The PESDxS1UB series is designed for unidirectional protection of one single data line from the damage caused by ESD (ElectroStatic Discharge) and Surge Pulses. The PESDxS1UB series may be used on lines where the signal polarity is above or below ground. The PESDxS1UB series provides a surge capability of up to 330 Watts per line for a 8/20 µs waveform. line to be protected (positive signal polarity) line to be protected (negative signal polarity) PESDxS1UB PESDxS1UB ground ground uni-directional protection of one line 006aaa002 Fig 9. Unidirectional protection of one line Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, EFT and Surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protection conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 10 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 8. Package outline Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 Fig 10. Package outline PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 11 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 9. Packing information Table 9. Possible packing methods The indicated -xxx are the last three digits of the 12 NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PESD3V3S1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135 PESD5V0S1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135 PESD12VS1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135 PESD15VS1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135 PESD24VS1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135 [1] For further information see Section 12. PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 12 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 10. Revision history Table 10. Revision history Document ID Release date PESDXS1UB_SERIES_2 20090824 Modifications: Data sheet status Change notice Supersedes Product data - PESDXS1UB_SERIES_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 10 “Package outline”: updated PESDXS1UB_SERIES_1 20040614 Product data PESDXS1UB_SERIES_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 13 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 14 of 15 NXP Semiconductors PESDxS1UB series ESD protection diodes in SOD523 package 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 August 2009 Document identifier: PESDXS1UB_SERIES_2