DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UT series Double ESD protection diodes in SOT23 package Product specification Supersedes data of 2003 Aug 20 2004 Apr 15 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series QUICK REFERENCE DATA FEATURES • Uni-directional ESD protection of up to two lines SYMBOL • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs VRWM reverse stand-off voltage 3.3, 5.2, 12, 15 and 24 Cd diode capacitance VR = 0 V; f = 1 MHz 207, 152, 38, 32 pF and 23 number of protected lines 2 • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protection > 23 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. APPLICATIONS PARAMETER VALUE UNIT V PINNING • Computers and peripherals PIN • Communication systems • Audio and video equipment • High speed data lines • Parallel ports. DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode DESCRIPTION Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. 1 3 3 MARKING TYPE NUMBER 2 2 MARKING CODE(1) PESD3V3S2UT *U9 PESD5V2S2UT *U1 PESD12VS2UT *U2 PESD15VS2UT *U3 PESD24VS2UT *U4 001aaa490 sym022 Fig.1 Simplified outline (SOT23) and symbol. Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 2004 Apr 15 1 2 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UT − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power CONDITIONS MIN. MAX. UNIT 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 330 W PESD5V2S2UT − 260 W PESD12VS2UT − 180 W PESD15VS2UT − 160 W PESD24VS2UT − 160 W PESD3V3S2UT − 18 A PESD5V2S2UT − 15 A PESD12VS2UT − 5 A PESD15VS2UT − 5 A peak pulse current 8/20 µs pulse; notes 1 and 2 PESD24VS2UT − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. 2004 Apr 15 3 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series ESD maximum ratings SYMBOL ESD PARAMETER CONDITIONS electrostatic discharge capability VALUE UNIT PESD3V3S2UT 30 kV PESD5V2S2UT 30 kV PESD12VS2UT 30 kV PESD15VS2UT 30 kV PESD24VS2UT 23 kV 10 kV IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 PESDxS2UT series Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV 001aaa191 MLE218 120 Ipp handbook, halfpage Ipp 100 % 100 % Ipp; 8 µs (%) 80 90 % e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 10 20 30 t (µs) 40 30 ns 60 ns Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. 2004 Apr 15 Fig.3 4 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. t Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VRWM IRM VBR Cd V(CL)R PARAMETER MIN. TYP. MAX. UNIT reverse stand-off voltage PESD3V3S2UT − − 3.3 V PESD5V2S2UT − − 5.2 V PESD12VS2UT − − 12 V PESD15VS2UT − − 15 V PESD24VS2UT − − 24 V reverse leakage current PESD3V3S2UT VRWM = 3.3 V − 0.7 2 µA PESD5V2S2UT VRWM = 5.2 V − 0.15 1 µA PESD12VS2UT VRWM = 12 V − <0.02 1 µA PESD15VS2UT VRWM = 15 V − <0.02 1 µA PESD24VS2UT VRWM = 24 V − <0.02 1 µA PESD3V3S2UT 5.2 5.6 6.0 V PESD5V2S2UT 6.4 6.8 7.2 V PESD12VS2UT 14.7 15.0 15.3 V PESD15VS2UT 17.6 18.0 18.4 V PESD24VS2UT 26.5 27.0 27.5 V PESD3V3S2UT − 207 300 pF PESD5V2S2UT − 152 200 pF PESD12VS2UT − 38 75 pF PESD15VS2UT − 32 70 pF PESD24VS2UT − 23 50 pF breakdown voltage diode capacitance clamping voltage PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT 2004 Apr 15 CONDITIONS IZ = 5 mA f = 1 MHz; VR = 0 V notes 1 and 2 Ipp = 1 A − − 7 V Ipp = 18 A − − 20 V Ipp = 1 A − − 9 V Ipp = 15 A − − 20 V Ipp = 1 A − − 19 V Ipp = 5 A − − 35 V Ipp = 1 A − − 23 V Ipp = 5 A − − 40 V Ipp = 1 A − − 36 V Ipp = 3 A − − 70 V 5 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package SYMBOL PESDxS2UT series PARAMETER CONDITIONS MIN. TYP. MAX. UNIT differential resistance Rdiff PESD3V3S2UT IR = 1 mA − − 400 Ω PESD5V2S2UT IR = 1 mA − − 80 Ω PESD12VS2UT IR = 1 mA − − 200 Ω PESD15VS2UT IR = 1 mA − − 225 Ω PESD24VS2UT IR = 0.5 mA − − 300 Ω Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA 001aaa147 104 001aaa193 1.2 Ppp (W) Ppp Ppp(25˚C) 103 0.8 (1) 102 0.4 (2) 10 1 10 102 103 0 104 0 tp (µs) 50 100 150 200 Tj (°C) (1) PESD3V3S2UT and PESD5V2S2UT. (2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Fig.2. Fig.5 Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. 2004 Apr 15 6 Relative variation of peak pulse power as a function of junction temperature; typical values. Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa148 240 001aaa149 50 Cd (pF) Cd (pF) 200 40 160 120 (1) 30 (2) 20 (1) (2) 80 (3) 10 40 0 1 2 3 4 0 5 0 VR (V) 5 10 20 25 VR (V) (1) PESD3V3S2UT; VRWM = 3.3 V. (1) PESD12VS2UT; VRWM = 12 V. (2) PESD5V2S2UT; VRWM = 5 V. (2) PESD15VS2UT; VRWM = 15 V. (3) PESD24VS2UT; VRWM = 24 V. Tamb = 25 °C; f = 1 MHz. Tamb = 25 °C; f = 1 MHz. Fig.6 Fig.7 Diode capacitance as a function of reverse voltage; typical values. 2004 Apr 15 15 7 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa270 10 IR IR(25˚C) (1) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S2UT; VRWM = 3.3 V. PESD5V2S2UT; VRWM = 5 V. IR is less than 10 nA at 150 °C for: PESD12V52UT; VRWM = 12 V. PESD15VS2UT; VRWM = 15 V. PESD24VS2UT; VRWM = 24 V. Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. 2004 Apr 15 8 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package ESD TESTER RZ 450 Ω PESDxS2UT series RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω CZ note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.: PESDxS2UT vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS2UT GND PESD15VS2UT GND GND PESD12VS2UT GND PESD5V2S2UT GND PESD3V3S2UT GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 10 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 001aaa492 Fig.9 ESD clamping test set-up and waveforms. 2004 Apr 15 9 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series APPLICATION INFORMATION The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs waveform. line 1 to be protected line 1 to be protected line 2 to be protected PESDxS2UT PESDxS2UT ground ground unidirectional protection of two lines bidirectional protection of one line 001aaa491 Fig.10 Typical application: ESD protection of data lines. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: • Place the PESDxS2UT as close as possible to the input terminal or connector. • The path length between the PESDxS2UT and the protected line should be minimized. • Keep parallel signal paths to a minimum. • Avoid running protected conductors in parallel with unprotected conductors. • Minimize all printed-circuit board conductive loops including power and ground loops. • Minimize the length of transient return paths to ground. • Avoid using shared return paths to a common ground point. • Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias. 2004 Apr 15 10 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Apr 15 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 11 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Apr 15 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/03/pp13 Date of release: 2004 Apr 15 Document order number: 9397 750 12823