PESD5V0S1BA; PESD5V0S1BB; PESD5V0S1BL Low capacitance bidirectional ESD protection diodes Rev. 04 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP JEITA PESD5V0S1BA SOD323 SC-76 PESD5V0S1BB SOD523 SC-79 PESD5V0S1BL SOD882 - 1.2 Features n n n n Bidirectional ESD protection of one line Max. peak pulse power: PPP = 130 W Low clamping voltage: V(CL)R = 14 V Ultra low leakage current: IRM = 5 nA n n n n ESD protection > 30 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 12 A Ultra small SMD plastic packages 1.3 Applications n Cellular handsets and accessories n Portable electronics n Computers and peripherals n Communication systems n Audio and video equipment 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter VRWM reverse stand-off voltage Cd diode capacitance Conditions VR = 0 V; f = 1 MHz Min Typ Max Unit - - 5 V - 35 45 pF PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOD323, SOD523 1 cathode 1 2 cathode 2 1 2 1 2 sym045 001aab540 SOD882 1 cathode 1 2 cathode 2 1 2 1 2 sym045 Transparent top view 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323 PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523 PESD5V0S1BL - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 4. Marking Table 5. Marking codes Type number Marking code PESD5V0S1BA E6 PESD5V0S1BB L7 PESD5V0S1BL F1 PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 2 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max PPP peak pulse power 8/20 µs IPP peak pulse current 8/20 µs Tj Unit [1][2] - 130 W [1][2] - 12 A junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Per diode [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measured from pin 1 to pin 2. Table 7. ESD maximum ratings Symbol Parameter ESD Conditions electrostatic discharge capability IEC 61000-4-2 (contact discharge) [1][2] HBM MIL-Std 883 Max Unit - 30 kV - 10 kV [1] Measured from pin 1 to pin 2. [2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. Table 8. ESD standards compliance Standard Conditions IEC 61000-4-2, level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact) HBM MIL-STD 883; class 3 > 4 kV PESD5V0S1BA_BB_BL_4 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 3 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 001aaa191 Ipp mle218 120 100 % 90 % 100 % Ipp; 8 µs Ipp (%) 80 e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 Fig 1. 10 20 30 40 t (µs) 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 PESD5V0S1BA_BB_BL_4 Product data sheet t 30 ns © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 4 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 5 100 nA Per diode VRWM reverse stand-off voltage IRM reverse leakage current VRWM = 5 V; see Figure 6 V(CL)R clamping voltage IPP = 1 A [1][2] - - 10 V IPP = 12 A [1][2] - - 14 V V(BR) breakdown voltage IR = 1 mA 5.5 - 9.5 V rdif differential resistance IR = 1 mA - - 50 Ω Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 - 35 45 pF [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measures from pin 1 to pin 2. PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 5 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 001aaa202 103 001aaa193 1.2 PPP PPP(25°C) Ppp (W) 0.8 102 0.4 10 1 102 10 103 0 104 0 50 100 150 t p (µs) 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power dissipation as a function of exponential time duration tp; typical values 001aaa203 38 Cd (pF) Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa204 102 IRM(Tj) IRM(Tj =85°C) 34 10 30 1 26 10−1 22 0 1 2 3 4 75 5 VR (V) 100 125 Tj (°C) 150 Tamb = 25 °C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 6 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ PESD5V0S1Bx IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) Fig 7. vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 006aaa056 ESD clamping test setup and waveforms PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 7 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 7. Application information PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may be used on lines where the signal polarities are above and below ground. They provide a surge capability of up to 130 W per line for a 8/20 µs waveform. signal line PESD5V0S1Bx GND 006aaa057 Fig 8. Bidirectional protection of one signal line Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protection conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 8 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 8. Package outline Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC SOD323 Fig 9. JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 Package outline SOD323 (SC-76) PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 9 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC SOD523 JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 Fig 10. Package outline SOD523 (SC-79) PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 10 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm L SOD882 L 1 2 b e1 A A1 E D (2) 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b D E e1 L mm 0.50 0.46 0.03 0.55 0.47 0.62 0.55 1.02 0.95 0.65 0.30 0.22 Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17 SOD882 Fig 11. Package outline SOD882 PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 11 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PESD5V0S1BA SOD323 4 mm pitch, 8 mm tape and reel -115 -135 PESD5V0S1BB SOD523 4 mm pitch, 8 mm tape and reel -115 -135 PESD5V0S1BL SOD882 4 mm pitch, 8 mm tape and reel - -315 [1] For further information and the availability of packing methods, see Section 12. PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 12 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 10. Revision history Table 11. Revision history Document ID Release date PESD5V0S1BA_BB_BL_4 20090820 Modifications: Data sheet status Change notice Supersedes Product data sheet - PESD5V0S1BA_BB_BL_3 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • • Table 3 “Pinning”: amended Figure 9 “Package outline SOD323 (SC-76)”: updated Figure 10 “Package outline SOD523 (SC-79)”: updated PESD5V0S1BA_BB_BL_3 20041217 Product data sheet - PESD5V0S1BA_BB_BL_2 PESD5V0S1BA_BB_BL_2 20040802 Product data sheet - PESD5V0S1BA_1 PESD5V0S1BB_1 PESD5V0S1BA_1 20040322 Product specification - - PESD5V0S1BB_1 20040304 Product specification - - PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 13 of 15 PESD5V0S1BA/BB/BL NXP Semiconductors Low capacitance bidirectional ESD protection diodes 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD5V0S1BA_BB_BL_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 20 August 2009 14 of 15 NXP Semiconductors PESD5V0S1BA/BB/BL Low capacitance bidirectional ESD protection diodes 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 August 2009 Document identifier: PESD5V0S1BA_BB_BL_4