PESDxS2UQ series Double ESD protection diodes in SOT663 package Rev. 03 — 11 September 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series QUICK REFERENCE DATA FEATURES • Uni-directional ESD protection of up to two lines SYMBOL • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs VRWM reverse stand-off voltage 3.3, 5, 12, 15 and 24 Cd diode capacitance VR = 0 V; f = 1 MHz 200, 150, 38, 32 pF and 23 number of protected lines 2 • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA PARAMETER • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS VALUE UNIT V PINNING • Computers and peripherals PIN • Communication systems • Audio and video equipment • High speed data lines • Parallel ports. DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. 3 1 3 MARKING TYPE NUMBER 2 MARKING CODE PESD3V3S2UQ E1 PESD5V0S2UQ E2 PESD12VS2UQ E3 PESD15VS2UQ E4 PESD24VS2UQ E5 1 2 001aaa732 sym022 Fig.1 Simplified outline (SOT663) and symbol. Rev. 03 - 11 September 2008 2 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UQ − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT663 PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS Ppp peak pulse power 8/20 µs pulse; notes 1 and 2 Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 MIN. MAX. UNIT − 150 W PESD3V3S2UQ − 15 A PESD5V0S2UQ − 15 A PESD12VS2UQ − 5 A PESD15VS2UQ − 5 A PESD24VS2UQ − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Non-repetitive current pulse 8/20 µs exponential decaying waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. Rev. 03 - 11 September 2008 3 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series ESD maximum ratings SYMBOL ESD PARAMETER CONDITIONS electrostatic discharge capability VALUE UNIT PESD3V3S2UQ 30 kV PESD5V0S2UQ 30 kV PESD12VS2UQ 30 kV PESD15VS2UQ 30 kV PESD24VS2UQ 23 kV 10 kV IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 PESDxS2UQ series Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV 001aaa191 MLE218 120 handbook, halfpage Ipp 100 % 100 % Ipp; 8 µs (%) 80 Ipp 90 % e−t 50 % Ipp; 20 µs 40 10 % 0 10 20 30 t (µs) t tr = 0.7 to 1 ns 0 40 30 ns 60 ns Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. Fig.3 Rev. 03 - 11 September 2008 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. 4 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VRWM IRM VBR Cd V(CL)R PARAMETER CONDITIONS MIN. TYP. MAX. UNIT reverse stand-off voltage PESD3V3S2UQ − − 3.3 V PESD5V0S2UQ − − 5 V PESD12VS2UQ − − 12 V PESD15VS2UQ − − 15 V PESD24VS2UQ − − 24 V reverse leakage current PESD3V3S2UQ VRWM = 3.3 V − 0.55 3 µA PESD5V0S2UQ VRWM = 5 V − 50 300 nA PESD12VS2UQ VRWM = 12 V − <1 30 nA PESD15VS2UQ VRWM = 15 V − <1 50 nA PESD24VS2UQ VRWM = 24 V − <1 50 nA PESD3V3S2UQ 5.2 5.6 6.0 V PESD5V0S2UQ 6.4 6.8 7.2 V PESD12VS2UQ 14.7 15.0 15.3 V PESD15VS2UQ 17.6 18.0 18.4 V PESD24VS2UQ 26.5 27.0 27.5 V PESD3V3S2UQ − 200 275 pF PESD5V0S2UQ − 150 215 pF PESD12VS2UQ − 38 100 pF PESD15VS2UQ − 32 70 pF PESD24VS2UQ − 23 50 pF breakdown voltage diode capacitance clamping voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ IZ = 5 mA f = 1 MHz; VR = 0 V notes 1 and 2 Ipp = 1 A − − 8 V Ipp = 15 A − − 20 V Ipp = 1 A − − 9 V Ipp = 15 A − − 20 V Ipp = 1 A − − 19 V Ipp = 5 A − − 35 V Ipp = 1 A − − 23 V Ipp = 5 A − − 40 V Ipp = 1 A − − 36 V Ipp = 3 A − − 70 V Rev. 03 - 11 September 2008 5 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package SYMBOL Rdiff PESDxS2UQ series PARAMETER CONDITIONS MIN. TYP. MAX. UNIT differential resistance PESD3V3S2UQ IR = 5 mA − − 40 Ω PESD5V0S2UQ IR = 5 mA − − 15 Ω PESD12VS2UQ IR = 5 mA − − 15 Ω PESD15VS2UQ IR = 1 mA − − 225 Ω PESD24VS2UQ IR = 0.5 mA − − 300 Ω Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA 001aaa726 104 001aaa193 1.2 Ppp Ppp (W) Ppp(25˚C) 103 0.8 102 0.4 10 1 10 102 0 103 0 tp (µs) 50 100 150 200 Tj (°C) Tamb = 25 °C. tp = 8/20 µs exponential decaying waveform; see Fig.2. Fig.5 Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. Rev. 03 - 11 September 2008 Relative variation of peak pulse power as a function of junction temperature; typical values. 6 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package 001aaa727 240 Cd (pF) PESDxS2UQ series 001aaa728 50 Cd (pF) 200 40 160 30 (1) 120 20 (2) (1) (2) 80 10 40 (3) 0 0 1 2 3 4 5 0 5 10 VR (V) 15 20 25 VR (V) (1) PESD3V3S2UQ; VRWM = 3.3 V. (1) PESD12VS2UQ; VRWM = 12 V. (2) PESD5V0S2UQ; VRWM = 5 V. (2) PESD15VS2UQ; VRWM = 15 V. (3) PESD24VS2UQ; VRWM = 24 V. Tamb = 25 °C; f = 1 MHz. Tamb = 25 °C; f = 1 MHz. Fig.6 Fig.7 Diode capacitance as a function of reverse voltage; typical values. Rev. 03 - 11 September 2008 Diode capacitance as a function of reverse voltage; typical values. 7 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series 001aaa729 10 IR IR(25°C) (1) (2) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S2UQ; VRWM = 3.3 V. (2) PESD5V0S2UQ; VRWM = 5 V. IR is less than 15 nA at 150 °C for: PESD12VS2UQ; VRWM = 12 V. PESD15VS2UQ; VRWM = 15 V. PESD24VS2UQ; VRWM = 24 V. Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. Rev. 03 - 11 September 2008 8 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package ESD TESTER RZ 450 Ω PESDxS2UQ series RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω CZ note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.: PESDxS2UQ vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS2UQ GND PESD15VS2UQ GND GND PESD12VS2UQ GND PESD5V2S2UQ GND PESD3V3S2UQ GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 10 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 001aaa731 Fig.9 ESD clamping test set-up and waveforms. Rev. 03 - 11 September 2008 9 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series APPLICATION INFORMATION The PESDxS2UQ series is designed for uni-directional protection for up to two data lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UQ series may be used on lines where the signal polarities are below ground. PESDxS2UQ series provide a surge capability of up to 150 W (Ppp) per line for an 8/20 µs waveform. line 1 to be protected line 1 to be protected line 2 to be protected PESDxS2UQ PESDxS2UQ ground uni-directional protection of two lines ground bi-directional protection of one line 001aaa730 Fig.10 Typical application: ESD protection of data lines. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: • Place the PESDxS2UQ as close as possible to the input terminal or connector. • The path length between the PESDxS2UQ and the protected line should be minimized. • Keep parallel signal paths to a minimum. • Avoid running protected conductors in parallel with unprotected conductors. • Minimize all printed-circuit board conductive loops including power and ground loops. • Minimize the length of transient return paths to ground. • Avoid using shared return paths to a common ground point. • Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias. Rev. 03 - 11 September 2008 10 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT663 D E B X Y HE 3 A 1 c 2 e1 w M B bp Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.33 0.23 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-12-04 02-05-21 SOT663 Rev. 03 - 11 September 2008 11 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Rev. 03 - 11 September 2008 12 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package Revision history Table 1. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS2UQ_SER_N_3 20080911 Product data sheet - PESDXS2UQ_SERIES_2 Modifications: • Asterisks and note 1 removed in Marking Table PESDXS2UQ_SERIES_2 20040427 Product specification - PESDXS2UQ_SERIES_1 PESDXS2UQ_SERIES_1 20031215 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 September 2008 Document identifier: PESDXS2UQ_SER_N_3