PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 12 November 2010 Preliminary data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features and benefits Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant) Bidirectional ESD protection of one line Low diode capacitance Cd = 35 pF ESD protection up to ±30 kV according IEC 61000-4-2 Ultra small SMD package 1.3 Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5 V - 35 45 pF PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 cathode (diode 2) Simplified outline 1 Graphic symbol 2 1 2 sym045 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name PESD5V0S1BSF - Description Version leadless ultra small package; 2 terminals; body 0.6 × 0.3 × 0.3 mm SOD962 4. Marking Table 4. PESD5V0S1BSF Preliminary data sheet Marking codes Type number Marking code PESD5V0S1BSF S All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 μs [1][2] IPP peak pulse current tp = 8/20 μs [1][2] Tj junction temperature Tamb ambient temperature Tstg storage temperature PPP Unit - 100 W - 8 A - 150 °C −55 +150 °C −65 +150 °C Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5; see Figure 1. [2] Measured from pin 1 to pin 2. Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage Conditions Min Max Unit - 30 kV IEC 61000-4-2 (air discharge) - 40 kV MIL-STD-883 (human body model) - 30 kV [1][2] IEC 61000-4-2 (contact discharge) [1] Measured from pin 1 to pin 2. [2] Device stressed with ten non-repetitive ESD pulses; see Figure 2. Table 7. ESD standards compliance Standard Preliminary data sheet Max [1] Table 6. PESD5V0S1BSF Min Conditions IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 001aaa191 Ipp mle218 120 100 % 90 % 100 % Ipp; 8 μs Ipp (%) 80 e−t 50 % Ipp; 20 μs 40 10 % 0 Fig 1. t tr = 0.7 to 1 ns 0 10 20 30 30 ns 40 t (μs) 60 ns 8/20 μs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 1 100 nA Per diode VRWM reverse standoff voltage IRM reverse leakage current VRWM = 5 V VCL clamping voltage IPP = 1 A [1][2] - - 12 V IPP = 8 A [1][2] - - 15.5 V 6 - 10 V VR = 0 V - 35 45 pF VR = 2.5 V - 26.5 35 pF VBR breakdown voltage IR = 1 mA Cd diode capacitance f = 1 MHz VR = 5 V LS series inductance [3] Rdyn dynamic resistance [4] [1] PESD5V0S1BSF Preliminary data sheet - 23.7 31 pF - 0.05 - nH - 0.28 - Ω Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5; see Figure 1. [2] Measured from pin 1 to pin 2. [3] Calculated from S-parameter values. [4] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANS/IESD STM5.1-2008. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 018aaa049 50 IPP Cd (pF) 40 −VCL −VBR −VRWM 30 IR IRM −IRM −IR VRWM VBR VCL 20 − 10 0.0 1.0 2.0 3.0 4.0 + −IPP 5.0 VR (V) 006aaa676 f = 1 MHz; Tamb = 25 °C Fig 3. Diode capacitance as a function of reverse voltage; typical values Fig 4. V-I characteristics for a bidirectional ESD protection diode ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ PESD5V0x1BSF IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω Fig 5. 018aaa037 ESD clamping test setup PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 018aaa050 20 VCL (V) 018aaa051 5 VCL (V) 15 0 10 −5 5 −10 0 −15 −5 −50 20 90 160 230 300 t (ns) −20 −50 f = 1 MHz; Tamb = 25 °C Fig 6. 20 90 160 230 300 t (ns) f = 1 MHz; Tamb = 25 °C Clamped +1 kV ESD pulse waveform (IEC 61000-4-2 network) Clamped −1 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 7. 018aaa052 45 VCL (V) 018aaa053 5 VCL (V) 35 −5 25 −15 15 −25 5 −35 −5 −50 20 90 160 230 300 t (ns) −45 −50 f = 1 MHz; Tamb = 25 °C Fig 8. Preliminary data sheet 90 160 230 300 t (ns) f = 1 MHz; Tamb = 25 °C Clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) PESD5V0S1BSF 20 Fig 9. Clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 7. Application information The PESD5V0S1BSF is designed for the protection of one data or signal line from the damage caused by ESD and/or other surge pulses. The device may be used on lines where the signal polarities are both, positive and negative with respect to ground. It provides protection against surges with up to 100 W per line. line to be protected PESD5V0S1BSF GND 018aaa054 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible 2. The path length between the device and the protected line should be minimized 3. Avoid running protected conductors in parallel with unprotected conductors 4. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops 5. Minimize the length of the transient return path to ground 6. Avoid using shared transient return paths to a common ground point 7. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 7 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 8. Package outline Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962 L 1 2 b e1 A A1 E D (2) 0 0.5 mm scale Dimensions Unit A(1) A1 b D E e1 max 0.32 0.0076 0.25 0.325 0.625 nom 0.4 min 0.28 0.23 0.275 0.575 mm L 0.15 0.13 Note 1. Dimension A is including coating foil thickness. 2. The marking bar indicates the cathode. Outline version sod962_po References IEC JEDEC JEITA European projection Issue date 10-11-03 10-11-11 SOD962 Fig 11. Package outline PESD5V0S1BSF (SOD962) PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 9000 PESD5V0S1BSF [1] SOD962 2 mm pitch, 8 mm tape and reel -315 For further information and the availability of packing methods, see Section 13. 10. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962 0.85 0.4 0.4 R0.025 (8×) 0.22 (2×) 0.12 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962_fr Reflow soldering is the required soldering method. Fig 12. Reflow soldering footprint PESD5V0S1BSF (SOD962) Based on results of board mount testing, NXP Semiconductors requires the following soldering guidelines: 1. Soldering footprint as indicated in Figure 12: solder paste has to cover the whole solder land area. 2. Non-solder mask defined (copper-defined) solder lands. 3. Minimum stencil thickness of 100 μm. 4. Paste type 4 or smaller sphere size. 5. Pick and placement accuracy of ±50 μm. PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0S1BSF v.1 20101112 Preliminary data sheet - - PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 11 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD5V0S1BSF Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 PESD5V0S1BSF NXP Semiconductors Bidirectional low capacitance ESD protection diode 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 November 2010 Document identifier: PESD5V0S1BSF