Presentation Evaluation Board 600W LLC General Description

600 W Half-Bridge LLC
evaluation board
EVAL_600W_LLC_12V_C7_D
digital & analog
Table of contents
1
General description
2
Efficiency results
3
Design concept
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
2
General
Description:
The “EVAL_600W_LLC_12V_C7“ - evaluation board shows how to design a Half-Bridge LLC
stage of a server SMPS with the target to meet 80+ Titanium standard efficiency requirements. On
this purpose there has been applied latest CoolMOS™ technology IPP60R180C7 600 V power
MOSFET on the primary side and OptiMOS™ low voltage power MOSFET in
SuperSO8 BSC010N04LS in the synchronous rectification secondary stage, in combination with QR
CoolSET™ ICE2QR2280Z, hi-low side driver 2EDL05N06PF, low-side Gate Driver 2EDN7524F and
a LLC Controller ICE2HS01G for the analog or XMC4200 in the digital version.
Summary of features:
›
Output voltage: 12 V
›
Output current: 50 A
›
Efficiency @ 10% load > 95%
›
Peak efficiency @ 50% load > 97,8%
The following variants are available:
›
600W 12V LLC analog version with CoolMOS™ C7, IPP60R180C7, EVAL_600W_LLC_12V_C7
›
600W 12V LLC digital version with CoolMOS™ C7, IPP60R180C7,
2015-10-12
EVAL_600W_LLC_12V_C7_D
Copyright © Infineon Technologies AG 2015. All rights reserved.
3
Example of system understanding: Infineon
demo solution for Titanium HV DC/DC stage
Half-Bridge LLC with
synchronous rectification in
center tap configuration
Vin
350-410 VDC
Vin_nom
380 VDC
Vout_nom
12 VDC
Iout
50 A
Po
600 W
fres=f0
157 kHz
fmin
90 kHz
fmax
210 kHz
Transformer
turns ratio
16:1
Cr
66 nF
Lr
15.5 uH
Lm
195 uH
2015-10-12
Primary HV MOSFETs
SR MOSFETs
TM
CoolMOS
IPP60R180C7 OptiMOSTM BSC010N04LS
Reduced gate charge (Qg)
New generation
› Reduced Eoff
› Best FOM RDS(on) x Qg
› High body diode ruggedness › Best FOM RDS(on) x Qoss
HB Gate Drive IC
Bias QR Flyback
2EDL05N06PF
controller
Non isolated LS Gate Drive
ICE2QR2280Z
2EDN7524F
LLC controller
Digital XMC4200 / Analog ICE2HS01G
SR MOSFETs
BSC010N04LS
Resonant inductor Transformer
PQ35/35 core
RM12 core
Copyright © Infineon Technologies AG 2015. All rights reserved.
4
Control board analog & digital
Two possible solution to control Infineon`s 600 W LLC evaluation board
Analog - ICE2HS01G
›
Resonant mode controller for Half-Bridge LLC
resonant converter with synchronous
rectification drives
›
Driving signal for synchronous rectification
which support full operation of Half-Bridge LLC
resonant converter
›
20-pin DSO package
›
30 kHz to 1MHz switching frequency
›
50% duty cycle for both primary and secondary
gate drives
›
Adjustable dead time with high accuracy
2015-10-12
Digital - XMC4200-Q48K256 AB
›
ARM® Cortex®-M4, 80 MHz, incl. single cycle
DSP MAC and floating point unit (FPU)
›
8-channel DMA + dedicated DMA for USB
›
USB 2.0 full-speed device
›
CPU Frequency: 80 MHz
›
eFlash: 256 kB including hardware ECC
›
40 kB SRAM
›
Package: PG-LQFP-48
Copyright © Infineon Technologies AG 2015. All rights reserved.
5
PCB boards layout: main power board and
control and bias daughter boards
 Power density >20 W/inch3
Controller board
2015-10-12
Bias board
Copyright © Infineon Technologies AG 2015. All rights reserved.
6
Main power board schematic (digital)
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
7
Bias board schematic
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
8
Analog control board schematic
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
9
Digital controller
XMC4200Q48K256 AB
Digital control board schematic
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
10
PCB structure
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
11
BOM (rework from digital to analog)
Part Value
Pcs Tolerance Device
Package
Description
Assembling info
C3
470n/50V
1
C-EU_C0805
C0805
CAPACITOR
Replace 10n/50V with 470n/50V
R19
4K3
1
±1%
R-EU_R0805
R0805
RESISTOR
Replace 330R with 4K3
R20
4K3
1
±1%
R-EU_R0805
R0805
RESISTOR
Replace 330R with 4K3
R36
56R
1
±1%
R-EU_R0805
R0805
RESISTOR
Assemble n.a. with 56R
IC1
Board
1
Board
PCB
Analog_Controlcard
C3
2015-10-12
R19 & R20
Supplier
IFX
R36
Copyright © Infineon Technologies AG 2015. All rights reserved.
12
Table of contents
I
General description
II
Efficiency results
III
Design concept
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
13
Automated efficiency measurement
Efficiency
Combination of converter design
(resonant tank, transformer) and
proper HV device election
0,99
0,985
0,98
0,975
0,97
0,965
0,96
0,955
0,95
0,945
0,94
0,935
0,93
0,925
0,92
0,915
0,91
0,905
0,9
Proper selection of SR LV device and
secondary side
97.8% peak efficiency!
›
›
›
›
Highest Efficiency standard in
Computing applications
(HV DC/DC stage)
Output voltage: 12 VDC
Output current: 50 A
Efficiency: > 95% @ 10%
load, Vin = 380 VDC
Efficiency max: 97.8%, Vin
= 380 VDC
C7 180mOhm
0.1% Total accuracy
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49
IOUT [A]
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
14
Table of contents
1
General description
2
Efficiency results
3
Design concept
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
15
Design procedure: input data
Vin _ nom
n
2  Vout _ nom
n Vo _ min
M min  K min(Q, m, Fx ) 
Vin _ max
2
M max
2015-10-12
n Vo _ max
 K max (Q, m, Fx ) 
Vin _ min
2
Copyright © Infineon Technologies AG 2015. All rights reserved.
16
Resonant tank components and related
resonant frequencies
› n=Vin_nom/(2xVo)=380/(2*12)≈16
› Lm=195µH
› Lr=15.5µH
› Ln=Lm/Lr=12.5
› Cr=66nF
1
fo 
 157kHz
2  Lr  Cr
2015-10-12
1
fp 
 42.7kHz
2  ( Lr  Lm)  Cr
Copyright © Infineon Technologies AG 2015. All rights reserved.
17
Gain curves
DC - gain curve (600W LLC hardware revision C7)
1,2
M max 
1,1
n  Vo _ max
Vin _ min
2
1
gain
5A
0,9
0,8
15
A
n Vo _ min
M min 
Vin _ max
2
25
A
0,7
0,6
frequency [Hz]
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
18
Energy related calculations
(Ref. IPP60R180C7 device parameters)
Im ag _ min 
2 2


n  Vo
 0.672 A
2  fsw _ max  Lm
1
Enres _ min   ( Lm  Lr )  I ² mag _ min  95.1 J
2
 Enres _ min  Encap _ max
1
Encap _ max   (2Co (er ))  V ² DS _ max  9 J
2
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
19
Qoss, Imag,pk, tdead,min, tecs relationship
Im,pk
IQ2
IQ 2(t )  Im, pk  (1 
IQ 2(t )  0
t
tecs
) t  tecs
t  tecs
tecs  f ( Rg , tot,Vgs, th,
Cds
)
Cgd
ICHB
Im,pk
tdead , min
1
0 IC (t )dt  2  Im, pk  tecs  Im, pk  (tdead, min  tecs )  2  Qoss , @ 400 V
HB
VHB
VBULK
tecs
2015-10-12
tdead,min
t
ecs
2

Q
oss, @ 400 V
1 tdead, min 

2
Im, pk
Copyright © Infineon Technologies AG 2015. All rights reserved.
20
Time related calculations
(Ref. IPP60R180C7 device parameters)
Im ag _ min 
Im ag _ max 
2 2

2 2

n  Vo

 0.672 A
2  fsw _ max  Lm
n  Vo

 1.66 A
2  fsw _ min  Lm
tecs 2  Qoss, @ 400V
tdead, min  
 130 n sec
2
Im ag , max
tecs 2  Qoss, @ 400V
tdead, max  
 311 n sec
2
Im ag, min
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
21
Main transformer structure:
PQ35/35 core with TDK PC95 ferrite material
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
22
Resonant choke:
RM12 core, material N87
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
23
Evaluation board
EVAL_600W_12V_LLC_C7
2015-10-12
Copyright © Infineon Technologies AG 2015. All rights reserved.
24
Support slides
600W LLC evaluation board
– EVAL_600W_12V_LLC_C7
Evaluation board page
–
–
–
–
–
Technical description
Datasheets
Parameters
Related material
Videos
Product family pages
–
–
–
–
–
–
Product brief
Application notes
Selection guides
Datasheets and portfolio
Videos
Simulation models
2015-10-12
–
–
–
–
650V CoolMOS™ C7
XMC 32-Bit Industrial Microcontroller
Resonant Mode Controller
OptiMOS™ 5 40V and 60V
Copyright © Infineon Technologies AG 2015. All rights reserved.
25